摘要:
A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.
摘要:
A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.
摘要:
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.
摘要:
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.
摘要:
A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0≦y
摘要翻译:提供具有能够提高光输出性能的结构的氮化物系半导体发光元件及其制造方法。 有源层可以包括在n型半导体层上由In x Ga(1-x)N(0.01和n 1; x&nl; E; 0.05)形成的第一阻挡层,由InyGa(1-y)N(0& ; y <0.01),掺杂有包含N(氮)元素和Si(硅)元素中的至少一种的抗缺陷剂,由InzGa(1-z)形成的量子阱层, 在第一扩散阻挡层上的N(0.25和nlE; z&nlE; 0.35),在量子阱层上由InyGa(1-y)N(0&lt; 1E; y <0.01)形成的第二扩散阻挡层,并掺杂有抗缺陷 包括N元素和Si元素中的至少一种的第二阻挡层,以及由第二扩散阻挡层上的In x Ga(1-x)N(0.01&amp; N e; x&amp; 氮化物系半导体发光元件可以包括依次层叠在基板上的n型半导体层,有源层和p型半导体层。
摘要:
A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1−x1)N, where 0
摘要:
A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1−x1)N, where 0
摘要翻译:提供了包括有源层的半导体发光器件。 发光器件包括n型半导体层和p型半导体层之间的有源层。 有源层包括由In 1 x 1 Ga(1-x1)N形成的量子阱层,其中0 在量子的相对表面上 阱层和形成在量子阱层与至少一个阻挡层之间的扩散防止层。 由于有源层中的量子阱层与势垒层之间的扩散防止层,发光效率提高。
摘要:
Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.
摘要:
A laser display device is provided which includes: a light source emitting at least one laser beam; a light modulation unit for modulating the laser beam emitted from the light source according to an image signal; a scanning unit scanning the laser beam modulated in the light modulation unit in a main scanning direction and in a sub-scanning direction; and an image unit in which an image is formed having a phosphor layer in which excitation light is generated by a laser beam scanned by the scanning unit.
摘要:
Provided are semiconductor devices having improved surface morphology characteristics, and a method of fabricating the same. The semiconductor device includes: an r-plane sapphire substrate; an AlxGa(1-x)N(0≦×
摘要翻译:提供了具有改进的表面形态特性的半导体器件及其制造方法。 半导体器件包括:r面蓝宝石衬底; 在r面蓝宝石衬底上外延生长的Al x Ga(1-x)N(0≤x≤1)缓冲层,其厚度范围为 在含有氮气(N 2/2)的气体气氛中,在900-1100℃的温度下进行100-20000。 以及形成在缓冲层上的第一a面GaN层。