公开(公告)号：US6013369A

公开(公告)日：2000-01-11

申请号：US684745

申请日：1996-07-22

申请人： Tatsuhiko Adachi ,  Kazuhiko Sakai ,  Norihiro Nakayama ,  Kenichi Fujino ,  Hidekazu Takagi ,  Takako Sakai ,  Mitsumasa Kimata

发明人： Tatsuhiko Adachi ,  Kazuhiko Sakai ,  Norihiro Nakayama ,  Kenichi Fujino ,  Hidekazu Takagi ,  Takako Sakai ,  Mitsumasa Kimata

IPC分类号： B01J2/00 ,  G02F1/1339 ,  B32B5/16 ,  B01J13/04 ,  B05D3/02

CPC分类号： B01J2/003 ,  G02F1/1339 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A process for the production of insulator-coated black particles, which comprises the steps of(1-a) dispersing particles of silica or a metal oxide in an alcohol-based solvent consisting mainly of an intermediate alcohol to obtain a dispersion of the above particles,(1-c) forming a titanium oxide coating of TiO.sub.2 on the surface of each of the particles whose surfaces have been activated in the above step, to obtain titanium oxide-coated particles,(1-d) calcining the titanium oxide-coated particles obtained in the above step in a reducing and/or nitriding atmosphere and thereby blackening the above titanium oxide coatings to obtain black particles, and(1-e) forming an electrical insulator coating on a surface of each of the black particles obtained in the above step, to obtain insulator-coated black particles; characterized in that the process includes a step of(1-b) adding an alkaline aqueous solution to the dispersion obtained in step (1-a) to activate a surface of each of the particles of a metal oxide.

摘要翻译： 一种制备绝缘体涂覆的黑色颗粒的方法，其包括以下步骤：（1-a）将二氧化硅或金属氧化物的颗粒分散在主要由中间体醇组成的醇基溶剂中以获得上述颗粒的分散体 ，（1-c）在上述步骤中已经活化表面的每个颗粒的表面上形成TiO 2的氧化钛涂层，以获得氧化钛涂覆的颗粒（1-d），煅烧氧化钛涂覆 在上述步骤中获得的颗粒在还原和/或氮化气氛中，从而使上述氧化钛涂层变黑以获得黑色颗粒，和（1-e）在每个黑色颗粒的表面上形成电绝缘体涂层 上述步骤，获得绝缘体涂覆的黑色颗粒; 其特征在于，所述方法包括（a-b）向在步骤（1-a）中得到的分散体中加入碱性水溶液以活化金属氧化物颗粒的表面的步骤。

公开(公告)号：US06194069B1

公开(公告)日：2001-02-27

申请号：US09363398

申请日：1999-07-29

申请人： Tatsuhiko Adachi ,  Kazuhiko Sakai ,  Norihiro Nakayama ,  Kenichi Fujino ,  Hidekazu Takagi

发明人： Tatsuhiko Adachi ,  Kazuhiko Sakai ,  Norihiro Nakayama ,  Kenichi Fujino ,  Hidekazu Takagi

IPC分类号： B32B516

CPC分类号： B01J2/003 ,  G02F1/1339 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A process for the production of insulator-coated black particles, which comprises the steps of (1-a) dispersing particles of silica or a metal oxide in an alcohol-based solvent consisting mainly of an intermediate alcohol to obtain a dispersion of the above particles, (1-c) forming a titanium oxide coating of TiO2 on the surface of each of the particles whose surfaces have been activated in the above step, to obtain titanium oxide-coated particles, (1-d) calcining the titanium oxide-coated particles obtained in the above step in a reducing and/or nitriding atmosphere and thereby blackening the above titanium oxide coatings to obtain black particles, and (1-e) forming an electrical insulator coating on a surface of each of the black particles obtained in the above step, to obtain insulator-coated black particles; characerized in that the process includes a step of (1-b) adding an alkaline aqueous solution to the dispersion obtained instep (1-a) to activate a surface of each of the particles of a metal oxide.

摘要翻译： 一种制备绝缘体涂覆的黑色颗粒的方法，其包括以下步骤：（1-a）将二氧化硅或金属氧化物的颗粒分散在主要由中间体醇组成的醇基溶剂中以获得上述颗粒的分散体 ，（1-c）在上述步骤中已经活化表面的每个颗粒的表面上形成TiO 2的氧化钛涂层，以获得氧化钛涂覆的颗粒（1-d），煅烧氧化钛涂覆 在上述步骤中获得的颗粒在还原和/或氮化气氛中，从而使上述氧化钛涂层变黑以获得黑色颗粒，和（1-e）在每个黑色颗粒的表面上形成电绝缘体涂层 上述步骤，获得绝缘体涂覆的黑色颗粒; 其特征在于，该方法包括（a-b）将碱性水溶液加入到所得到的分散体（1-a）中以活化金属氧化物的每个颗粒的表面的步骤。

公开(公告)号：US5750258A

公开(公告)日：1998-05-12

申请号：US553442

申请日：1995-11-21

申请人： Kazuhiko Sakai ,  Tatsuhiko Adachi ,  Norihiro Nakayama ,  Kenichi Fujino

发明人： Kazuhiko Sakai ,  Tatsuhiko Adachi ,  Norihiro Nakayama ,  Kenichi Fujino

IPC分类号： C08F292/00 ,  C08K9/06 ,  C08K9/08 ,  C09C1/30 ,  G02F1/1339 ,  B32B5/16 ,  B05D7/00

CPC分类号： C08K9/08 ,  C08F292/00 ,  C08K9/06 ,  C09C1/3081 ,  C09C1/309 ,  C01P2004/32 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/86 ,  C01P2006/90 ,  G02F1/1339 ,  Y10T428/2995 ,  Y10T428/2998

摘要： The present invention relates to crosslinked resin-coated silica fine particles each of which has a crosslinked resin coating formed of a structure of a single layer or a plurality of layers formed on the surface of each calcined silica fine particle through a vinyl-containing silane coupling agent, and the crosslinked resin-coated silica fine particles of the present invention have characteristic features in that the peeling of the resin coatings substantially do not occur when they are dispersed in a dispersing medium with ultrasonic vibration, and that they substantially do not move after the formation of a liquid crystal cell and substantially do not affect a liquid crystal itself and its orientation when used as a spacer for a liquid crystal display device.

摘要翻译： PCT No.PCT / JP95 / 00685 Sec。 371日期：1995年11月21日 102（e）1995年11月21日PCT PCT 1995年4月7日提交PCT公布。 出版物WO95 / 27680 日期：1995年10月19日本发明涉及交联树脂被覆二氧化硅微粒，其中，所述交联树脂被覆二氧化硅微粒具有通过以下方式形成的交联树脂涂层：由煅烧二氧化硅微粒表面形成的单层或多层结构， 含乙烯基的硅烷偶联剂和本发明的交联树脂包覆的二氧化硅微粒具有特征，其特征在于当它们以超声波振动分散在分散介质中时基本上不会发生树脂涂层的剥离，并且它们 在用作液晶显示装置的间隔物之后基本上不会移动液晶单元，并且基本上不影响液晶本身及其取向。

公开(公告)号：US06737145B1

公开(公告)日：2004-05-18

申请号：US09807904

申请日：2001-06-08

申请人： Toshiya Watanabe ,  Kazuhito Hashimoto ,  Akira Fujishima ,  Kazuyuki Takami ,  Norihiro Nakayama ,  Taro Suzuki ,  Naoki Tanaka ,  Eisuke Tachibana ,  Tatsuhiko Adachi

发明人： Toshiya Watanabe ,  Kazuhito Hashimoto ,  Akira Fujishima ,  Kazuyuki Takami ,  Norihiro Nakayama ,  Taro Suzuki ,  Naoki Tanaka ,  Eisuke Tachibana ,  Tatsuhiko Adachi

IPC分类号： B32B514

CPC分类号： C08F8/42 ,  Y10T428/31504 ,  Y10T428/31855 ,  Y10T428/31935

摘要： The present invention is concerned with an organic-inorganic composite graded material containing a composite material formed by chemically bonding an organic polymer compound and a metallic compound and having a component graded structure in which the content of the metallic compound continuously changes in the depth direction from the material surface, a process for the production of the above organic-inorganic composite graded material by forming a coating layer composed of a specific coating solution for forming the organic-inorganic composite film on an organic substrate and drying the coating layer under heat, a coating agent composed of the above organic-inorganic composite graded material for forming a coating film, and an article coated with the above coating agent.

摘要翻译： 本发明涉及含有通过化学键合有机高分子化合物和金属化合物形成的复合材料的有机 - 无机复合分级材料，并且具有其中金属化合物的含量在深度方向上连续变化的组分渐变结构 材料表面，通过在有机基材上形成有机无机复合膜的特定涂布溶液形成涂层并在加热下干燥涂层来生产上述有机 - 无机复合分级材料的方法， 由上述用于形成涂膜的有机 - 无机复合分级材料组成的涂布剂和涂覆有上述涂布剂的制品。

公开(公告)号：US20110215384A1

公开(公告)日：2011-09-08

申请号：US12673550

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/02255 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76835 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/53295 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/32145 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost.As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0≦x≦1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.

摘要翻译： 在包括浅沟槽元件隔离区域和多层结构的层间绝缘膜的半导体器件的制造工艺中，需要重复使用CMP，但是由于CMP本身是昂贵的，所以重复使用CMP是造成 增加制造成本。 作为用于浅沟槽（ST）元件隔离区域和/或最下层层间绝缘膜的绝缘膜，可以使用可通过旋涂进行涂覆的绝缘涂膜。 绝缘涂膜具有由（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x（其中n = 1至3和0＆nlE; x＆nlE; 1.0）表示的组成，并且具有不同相对介电常数k的膜 通过选择热处理条件形成。 可以通过将绝缘涂膜完全改性为SiO 2膜来形成STI元件隔离区域，而具有小相对介电常数k的层间绝缘膜可以通过将其转换为未完全改性的状态来形成。

公开(公告)号：US20110127075A1

公开(公告)日：2011-06-02

申请号：US12673543

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H05K1/11 ,  H05K3/46 ,  H05K3/36 ,  H05K1/00

CPC分类号： H01L23/5329 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684 ,  H01L21/76897 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH3)nSiO2-n/2)x(SiO2)1-x (where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.

摘要翻译： 包含介电常数（k）为2.5或更小并由通式（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x表示的一种或两种以上的氧化物的绝缘涂膜，其中 n = 1〜3，x＆lt; 1; 1）用于形成层间绝缘膜。 通过旋涂施加的绝缘涂膜是平坦的，没有反射下面的不均匀，并且热处理膜在Ra中的表面粗糙度为1nm以下，P-V值为20nm以下。 包含绝缘涂膜的层间绝缘膜可以具有布线结构和仅通过蚀刻形成的电极，而不需要CMP工艺。