Method of BARC removal in semiconductor device manufacturing
    3.
    发明授权
    Method of BARC removal in semiconductor device manufacturing 有权
    半导体器件制造中BARC去除的方法

    公开(公告)号:US08530356B2

    公开(公告)日:2013-09-10

    申请号:US13317084

    申请日:2011-10-07

    IPC分类号: H01L21/302

    摘要: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

    摘要翻译: 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法,其中在施加该方法之后低k电介质材料的介电常数的变化小于约5% 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量%HNO 3的硝酸蒸气。

    Method of barc removal in semiconductor device manufacturing
    4.
    发明申请
    Method of barc removal in semiconductor device manufacturing 有权
    半导体器件制造中的去除条纹的方法

    公开(公告)号:US20130089987A1

    公开(公告)日:2013-04-11

    申请号:US13317084

    申请日:2011-10-07

    IPC分类号: H01L21/306

    摘要: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.

    摘要翻译: 从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法,其中在施加该方法之后低k电介质材料的介电常数的变化小于约5% 。 该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量%HNO 3的硝酸蒸气。

    Method for forming transparent conductive oxide
    5.
    发明授权
    Method for forming transparent conductive oxide 有权
    形成透明导电氧化物的方法

    公开(公告)号:US08361835B2

    公开(公告)日:2013-01-29

    申请号:US12748790

    申请日:2010-03-29

    IPC分类号: H01L21/00

    摘要: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

    摘要翻译: 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上,以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说,在溅射过程中,在处理室中点燃等离子体,其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后,可以以任何顺序对衬底进行退火和蚀刻,以对透明导电氧化物层进行纹理化。 为了调整纹理的形状,可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

    Method for removing implanted photo resist from hard disk drive substrates
    6.
    发明授权
    Method for removing implanted photo resist from hard disk drive substrates 有权
    从硬盘驱动器基板上去除植入光刻胶的方法

    公开(公告)号:US08354035B2

    公开(公告)日:2013-01-15

    申请号:US12821400

    申请日:2010-06-23

    IPC分类号: B44C1/22

    CPC分类号: G11B5/84 G03F7/427

    摘要: A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

    摘要翻译: 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂,氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却,其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理,并且可以同时处理多个衬底。

    PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS
    8.
    发明申请
    PLASMA ION IMPLANTATION PROCESS FOR PATTERNED DISC MEDIA APPLICATIONS 审中-公开
    等离子体离子植入方法

    公开(公告)号:US20110104393A1

    公开(公告)日:2011-05-05

    申请号:US12939713

    申请日:2010-11-04

    IPC分类号: C23C14/04

    摘要: Processes and apparatus of forming patterns including magnetic and non-magnetic domains on a magnetically susceptible surface on a substrate are provided. In one embodiment, a method of forming a pattern of magnetic domains on a magnetically susceptible material disposed on a substrate includes exposing a first portion of a magnetically susceptible layer to a plasma formed from a gas mixture, wherein the gas mixture includes at least a halogen containing gas and a hydrogen containing gas for a time sufficient to modify a magnetic property of the first portion of the magnetically susceptible layer exposed through a mask layer from a first state to a second state.

    摘要翻译: 提供了在基板上的磁敏表面上形成包括磁性和非磁畴的图案的方法和装置。 在一个实施例中,在设置在基板上的易磁敏材料上形成磁畴图案的方法包括将磁敏感层的第一部分暴露于由气体混合物形成的等离子体,其中气体混合物至少包含卤素 含有气体和含氢气体的时间足以将通过掩模层暴露的易受敏感层的第一部分的磁特性从第一状态改变到第二状态。

    METHOD FOR REMOVING IMPLANTED PHOTO RESIST FROM HARD DISK DRIVE SUBSTRATES
    9.
    发明申请
    METHOD FOR REMOVING IMPLANTED PHOTO RESIST FROM HARD DISK DRIVE SUBSTRATES 有权
    从硬盘驱动器基板移除嵌入式照相器的方法

    公开(公告)号:US20110006034A1

    公开(公告)日:2011-01-13

    申请号:US12821400

    申请日:2010-06-23

    IPC分类号: G11B5/84

    CPC分类号: G11B5/84 G03F7/427

    摘要: A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

    摘要翻译: 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂,氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却,其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理,并且可以同时处理多个衬底。

    Method and apparatus for cleaning semiconductor substrates
    10.
    发明授权
    Method and apparatus for cleaning semiconductor substrates 失效
    用于清洁半导体衬底的方法和装置

    公开(公告)号:US07521374B2

    公开(公告)日:2009-04-21

    申请号:US10997194

    申请日:2004-11-23

    IPC分类号: H01L21/461 H01L21/31

    摘要: According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate is provided. The method may include supporting a semiconductor substrate, the semiconductor substrate having a surface, and dispensing an amount of semiconductor substrate processing liquid onto the surface of the semiconductor substrate, the amount of semiconductor substrate processing liquid being such that substantially none of the semiconductor substrate processing liquid flows off the surface of the semiconductor substrate. The semiconductor substrate processing fluid may form a standing puddle on the surface of the semiconductor substrate. The semiconductor substrate may be rotated while the semiconductor substrate processing liquid is on the surface of the semiconductor substrate such that substantially all of the amount of semiconductor substrate processing liquid remains on the surface of the semiconductor substrate during said rotation.

    摘要翻译: 根据本发明的一个方面,提供了一种用于清洁半导体衬底的方法和装置。 该方法可以包括:支撑半导体衬底,半导体衬底具有表面,以及将一定量的半导体衬底处理液体分配到半导体衬底的表面上,半导体衬底处理液体的量基本上不使用半导体衬底处理 液体从半导体衬底的表面流出。 半导体衬底处理流体可以在半导体衬底的表面上形成站立的水坑。 当半导体衬底处理液体在半导体衬底的表面上时半导体衬底可以旋转,使得在所述旋转期间基本上所有量的半导体衬底处理液体都保留在半导体衬底的表面上。