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1.发明申请Method of fabricating semiconductor memory device and semiconductor memory device driver 失效制造半导体存储器件和半导体存储器件驱动器的方法公开(公告)号：US20070187833A1
公开(公告)日：2007-08-16
申请号：US11783468
申请日：2007-04-10
IPC分类号： H01L23/48
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。
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2.发明授权Method of fabricating semiconductor memory device and semiconductor memory device driver 失效制造半导体存储器件和半导体存储器件驱动器的方法公开(公告)号：US07679194B2
公开(公告)日：2010-03-16
申请号：US11783468
申请日：2007-04-10
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。
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3.发明申请Method of fabricating semiconductor memory device and semiconductor memory device driver 审中-公开制造半导体存储器件和半导体存储器件驱动器的方法公开(公告)号：US20050006672A1
公开(公告)日：2005-01-13
申请号：US10916410
申请日：2004-08-12
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L21/8247 , H01L23/485 , H01L23/52 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/788 , H01L29/792 , H01L29/768
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。
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4.发明授权Method of fabricating semiconductor memory device and semiconductor memory device driver 失效制造半导体存储器件和半导体存储器件驱动器的方法公开(公告)号：US06794248B2
公开(公告)日：2004-09-21
申请号：US10279981
申请日：2002-10-25
IPC分类号： H01L21336
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。
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公开(公告)号：US07037780B2
公开(公告)日：2006-05-02
申请号：US10714909
申请日：2003-11-18
申请人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
发明人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573
摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
摘要翻译： 在半导体衬底上形成用于存储电荷的氮化硅膜，同时在其间放置隧道氧化物膜，然后对氮化硅膜进行氢等离子体处理，以便在制造的各个工艺步骤期间有效地擦除不存在的电荷。 从而稳定半导体存储器件的阈值电压（V SUB）。
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公开(公告)号：US07453116B2
公开(公告)日：2008-11-18
申请号：US11368678
申请日：2006-03-07
申请人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
发明人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573
摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
摘要翻译： 在半导体衬底上形成用于存储电荷的氮化硅膜，同时在其间放置隧道氧化物膜，然后对氮化硅膜进行氢等离子体处理，以便在制造的各个工艺步骤期间有效地擦除不存在的电荷。 从而稳定半导体存储器件的阈值电压（V SUB）。
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公开(公告)号：US20060145242A1
公开(公告)日：2006-07-06
申请号：US11368678
申请日：2006-03-07
申请人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
发明人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L27/11568 , H01L27/105 , H01L27/115 , H01L27/11573
摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
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公开(公告)号：US08083263B2
公开(公告)日：2011-12-27
申请号：US12473961
申请日：2009-05-28
IPC分类号： B62D21/15
CPC分类号： B62D21/152 , B60K15/07 , B60K2015/0638
摘要： A gas tank is protected by absorbing collision energy with the rear of a vehicle. Rear-side tank frame supports the tank at a position below a rear side member. The front portion of the tank frame is secured on rear side member, while the rear portion is directly or indirectly secured thereto. A torsion beam is arranged ahead of the tank frame. When an input load is exerted at rear end portions of the rear side member and tank frame toward the front of the vehicle, rear side member is folded to a V shape, upward with respect to the vehicle body. The tank frame collides with the torsion beam, and the front portion of the tank frame is pushed upward along with rear side member.
摘要翻译： 通过与车辆的后部吸收碰撞能量来保护气罐。 后侧油箱架将油箱支撑在后侧构件的下方。 罐框架的前部固定在后侧部件上，而后部直接或间接固定在其上。 扭力梁布置在油箱框架的前方。 当后侧构件和油箱框架的后端部向车辆前方施加输入负荷时，后侧构件相对于车身向上折叠成V形。 油箱架与扭力梁碰撞，油箱架的前部与后侧构件一起向上推。
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公开(公告)号：US07840128B2
公开(公告)日：2010-11-23
申请号：US12141355
申请日：2008-06-18
IPC分类号： G03B17/00
CPC分类号： G03B17/00 , H04N5/23248 , H04N5/23258 , H04N5/23287
摘要： An image-blur compensating device includes an optical component configured to compensate blur in an image, an actuator driving the optical component, a displacement detector detecting a position of the optical component changed by the actuator, an angular velocity detector detecting an angular velocity applied from outside, and a target displacement calculator calculating a driving amount when the actuator has driven the optical axis changing unit based on the angular velocity detected by the angular velocity detector and the position detected by the displacement detector. The target displacement calculator then obtains, as a result of compensating an amount of influence on the position of the optical component, a driving amount when driving the actuator based on the calculated driving amount. The image-blur compensating device further includes a driver driving the actuator based on the driving amount calculated by the target displacement calculator.
摘要翻译： 图像模糊补偿装置包括被配置为补偿图像中的模糊的光学部件，驱动光学部件的致动器，检测由致动器改变的光学部件的位置的位移检测器，检测从 以及目标位移计算器，其计算当致动器基于由角速度检测器检测的角速度和由位移检测器检测的位置而驱动光轴改变单元时的驱动量。 目标位移计算器，作为补偿对光学部件的位置的影响量的结果，获得基于计算出的驱动量来驱动致动器的驱动量。 图像模糊补偿装置还包括基于由目标位移计算器计算的驾驶量来驱动致动器的驾驶员。
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公开(公告)号：US20090309349A1
公开(公告)日：2009-12-17
申请号：US12473961
申请日：2009-05-28
CPC分类号： B62D21/152 , B60K15/07 , B60K2015/0638
摘要： A gas tank is protected by absorbing collision energy with the entirety of a rear portion of a vehicle without using a reinforcement member. This reduces weight and cost. Rear-side tank frame supports the tank at a position below rear side member. The front portion of rear-side tank frame is secured on rear side member, while the rear portion is directly or indirectly secured on rear side member. A torsion beam is arranged ahead of rear-side tank frame with respect to the vehicle body. When an input load is exerted at a rear end portion of the rear side member and a rear end portion of rear-side tank frame toward the front of the vehicle, rear side member is folded to a V-shape, upward with respect to the vehicle body. Rear-side tank frame collides with torsion beam, and the front portion of rear-side tank frame is pushed upward along with rear side member with respect to the vehicle body.
摘要翻译： 在不使用加强构件的情况下，通过与车辆的后部的整体吸收碰撞能量来保护气罐。 这减轻了重量和成本。 后侧油箱架将油箱支撑在后侧构件的下方。 后侧箱架的前部固定在后侧部件上，后部直接或间接地固定在后侧部件上。 扭力梁相对于车身布置在后侧油箱框架的前方。 当后侧构件的后端部和后侧箱架的后端部朝向车辆的前方施加输入负载时，后侧构件相对于前侧构件向上折叠成V字状 车身。 后侧油箱架与扭转梁碰撞，后侧油箱架的前部与后侧部件相对于车身向上推。
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