公开(公告)号：US20110073185A1

公开(公告)日：2011-03-31

申请号：US12995029

申请日：2008-10-30

申请人： Tatsuyuki Nishimiya ,  Hiroshi Mashima ,  Hiroomi Miyahara ,  Keisuke Kawamura ,  Youji Nakano

发明人： Tatsuyuki Nishimiya ,  Hiroshi Mashima ,  Hiroomi Miyahara ,  Keisuke Kawamura ,  Youji Nakano

IPC分类号： H01L31/036 ,  H01L21/66

CPC分类号： H01L31/075 ,  C23C16/24 ,  C23C16/509 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion apparatus (100) having a photovoltaic layer (3) comprising a crystalline silicon i-layer (42) formed on a large surface area substrate (1) of not less than 1 m2, wherein the crystalline silicon i-layer comprises regions in which the Raman peak ratio, which is the ratio, within the substrate (1) plane, of the Raman peak intensity of the crystalline silicon phase relative to the Raman peak intensity of the amorphous silicon phase, is within a range from not less then 3.5 to not more than 8.0, and the surface area proportion for those regions within the substrate (1) plane having a Raman peak ratio of not more than 2.5 is not more than 3%. In this manner, by adjusting the crystallinity of the crystalline silicon i layer to a crystallinity that yields a high output but is prior to the occurrence of high-brightness reflective regions, thereby restricting the surface area proportion of the high-brightness reflective regions, a photovoltaic device that exhibits a high output can be realized.

摘要翻译： 一种光电转换装置（100），其具有形成在不小于1m 2的大表面积基板（1）上的晶体硅i层（42）的光电转换装置（3），其中所述晶体硅i层包括区域 其中，相对于非晶硅相的拉曼峰强度，晶体硅相的拉曼峰强度的基板（1）面内的拉曼峰值比例在不小于等于的范围内 3.5以上8.0以下，拉曼峰比不大于2.5的基板（1）面内的那些区域的表面积比不大于3％。 以这种方式，通过将晶体硅i层的结晶度调节到产生高输出但在出现高亮度反射区域之前的结晶度，从而限制高亮度反射区域的表面积比例， 能够实现高输出的光电转换装置。

公开(公告)号：US20070094653A1

公开(公告)日：2007-04-26

申请号：US11580896

申请日：2006-10-16

申请人： Youji Nakano

发明人： Youji Nakano

IPC分类号： G06F19/00

CPC分类号： G06F19/701

摘要： The object of the present invention is the reduction of memory capacity in a multi-body problem processing apparatus. In a parameter storing method in multi-body problem processing for performing a molecular dynamics calculation for a plurality of particles existing in a three-dimensional space, parameters required to calculate a nonassociative force acting between particles subjected to the calculation are stored in a storage device and correspond to a combination of the particles subjected to the calculation.

摘要翻译： 本发明的目的是减少多体问题处理装置中的存储容量。 在用于对存在于三维空间中的多个粒子进行分子动力学计算的多体问题处理中的参数存储方法中，计算在经过计算的粒子之间作用的非相关力所需的参数被存储在存储装置 并且对应于经过计算的颗粒的组合。

公开(公告)号：US20060086386A1

公开(公告)日：2006-04-27

申请号：US11252994

申请日：2005-10-19

申请人： Youji Nakano ,  Nobuki Yamashita

发明人： Youji Nakano ,  Nobuki Yamashita

IPC分类号： H01L31/00

CPC分类号： H01L31/077 ,  Y02E10/50

摘要： A thin-film solar cell of a tandem type includes a first conductive layer formed on a transparent substrate to which a sun light is input; a top solar cell layer formed on the first conductive layer; and a bottom solar cell layer laminated on the top solar cell layer to be connected with the top solar cell in series. A total generation electric current of the thin-film solar cell layer is determined based on a generation electric current of the bottom solar cell layer.

摘要翻译： 串联型薄膜太阳能电池包括形成在输入太阳光的透明基板上的第一导电层; 形成在第一导电层上的顶部太阳能电池层; 以及层叠在与顶部太阳能电池串联连接的顶部太阳能电池层上的底部太阳能电池层。 基于底部太阳能电池层的发电电流来确定薄膜太阳能电池层的总发电电流。

公开(公告)号：US20050205127A1

公开(公告)日：2005-09-22

申请号：US11028312

申请日：2005-01-04

申请人： Toshiya Watanabe ,  Nobuki Yamashita ,  Youji Nakano ,  Saneyuki Goya ,  Satoshi Sakai ,  Yoshimichi Yonekura

发明人： Toshiya Watanabe ,  Nobuki Yamashita ,  Youji Nakano ,  Saneyuki Goya ,  Satoshi Sakai ,  Yoshimichi Yonekura

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/00

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.

摘要翻译： 通过在电绝缘透明基板上依次沉积至少第一透明电极，PIN结构或NIP结构的微晶硅层，第二透明电极和背电极来形成光电器件。 PIN结构或NIP结构的微晶硅层包括p型硅层，i型硅层和n型硅层。 第一透明电极和第二透明电极中的至少一个是掺杂有Ga的ZnO层，并且Ga相对于Zn为15原子％以下。

公开(公告)号：US20100116328A1

公开(公告)日：2010-05-13

申请号：US12452684

申请日：2008-12-19

申请人： Youji Nakano

发明人： Youji Nakano

IPC分类号： H01L31/00 ,  H01L31/0368

CPC分类号： H01L31/202 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for producing a photovoltaic device having a high conversion efficiency with improved productivity. The process for producing a photovoltaic device includes an n-layer formation step of depositing an n-layer composed of crystalline silicon on a substrate disposed inside a deposition chamber under reduced pressure conditions by heating the substrate with a heating device to convert the substrate to a heated state, supplying a raw material gas to the inside of the deposition chamber, and then supplying power to a discharge electrode positioned opposing the substrate, wherein the n-layer formation step comprises depositing the n-layer with the pressure inside the deposition chamber set to not less than 500 Pa and not more than 1,000 Pa, and the distance between the substrate and the discharge electrode set to not less than 6 mm and not more than 12 mm.

摘要翻译： 一种生产率高的转换效率高的光伏器件的制造方法。 制造光伏器件的方法包括：n层形成步骤，在减压条件下，在沉积室内设置的基板上沉积由结晶硅构成的n层，用加热装置加热衬底，将衬底转换成 向沉积室内部供给原料气体，然后向与该基板相对配置的放电电极供电，其特征在于，所述n层形成工序包括：在所述沉积室组中沉积所述n层 为500Pa以上1000Pa以下，基板与放电电极之间的距离为6mm以上且12mm以下。

公开(公告)号：US20070221269A1

公开(公告)日：2007-09-27

申请号：US11585073

申请日：2006-10-24

申请人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

发明人： Satoshi Sakai ,  Yasuyuki Kobayashi ,  Saneyuki Goya ,  Youji Nakano

IPC分类号： H01L31/00

CPC分类号： H01L31/056 ,  H01L31/0236 ,  Y02E10/52

摘要： The efficiency of a thin film Si solar battery is improved. Between a back face electrode and a transparent conductive film provided on a front face side of the back face electrode, a refractive index adjustment layer is interposed made from a material that has a lower refractive index than that of the transparent conductive film. For example when the transparent conductive film is GZO, SiO2 is interposed between the transparent conductive film and the back face electrode made from Ag. As a result light that penetrates into and is absorbed at the back face electrode is reduced, and the reflectivity of light at the back face electrode is improved.

摘要翻译： 提高薄膜Si太阳能电池的效率。 在背面电极和设置在背面电极的正面侧的透明导电膜之间，由折射率低于透明导电膜折射率的材料构成折射率调节层。 例如，当透明导电膜为GZO时，在透明导电膜和由Ag制成的背面电极之间插入SiO 2。 结果，在背面电极中渗入并被吸收的光减少，并且提高了背面电极的光的反射率。

公开(公告)号：US20110205556A1

公开(公告)日：2011-08-25

申请号：US13120295

申请日：2009-07-02

申请人： Satoshi Sakai ,  Youji Nakano ,  Yasuyuki Kobayashi ,  Kengo Yamaguchi ,  Akemi Takano

发明人： Satoshi Sakai ,  Youji Nakano ,  Yasuyuki Kobayashi ,  Kengo Yamaguchi ,  Akemi Takano

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transparent thin film and the second transparent thin film by using the obtained measurement values of the feature values and the feature-value characteristics stored in the storage section (14).

摘要翻译： 薄膜检查装置包括存储部分（14），其存储至少两个特征值特性，其中从光谱反射光谱中的特征值中选择的至少两个特征值受到在 第一透明薄膜和第二透明薄膜中的至少一个分别与第一透明薄膜的膜厚度和第二透明薄膜的膜厚相关联; 通过透明玻璃基板将白色光照射到检查对象基板（S）的光照射部（11） 接收从所述检查对象基板（S）反射的反射光的受光部（12）。 以及算术部（15），其从基于所接收的反射光生成的光谱反射光谱获得存储在所述存储部（14）中的特征量的测量值，并且计算所述第一透明薄膜和 通过使用获得的存储在存储部分（14）中的特征值和特征值特性的测量值来确定第二透明薄膜。

公开(公告)号：US20100200052A1

公开(公告)日：2010-08-12

申请号：US12671254

申请日：2007-09-18

申请人： Nobuki Yamashita ,  Toshiya Watanabe ,  Satoshi Sakai ,  Youji Nakano

发明人： Nobuki Yamashita ,  Toshiya Watanabe ,  Satoshi Sakai ,  Youji Nakano

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1884 ,  C23C14/0036 ,  C23C14/086 ,  H01L31/022483 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： An object of the present invention is to provide a photovoltaic device and a process for producing such a photovoltaic device that enable a stable, high photovoltaic conversion efficiency to be achieved by using a transparent electrode having an optimal relationship between the resistivity and the transmittance. At least one transparent electrode (12, 16) is either a ZnO layer containing no Ga or a Ga-doped ZnO layer in which the quantity of added Ga is not more than 5 atomic % relative to the Zn within the ZnO layer, and the ZnO layer is formed by a sputtering method using a rare gas containing added oxygen as the sputtering gas, wherein the quantity of oxygen added to the sputtering gas is not less than 0.1% by volume and not more than 5% by volume relative to the combined volume of the oxygen and the rare gas.

摘要翻译： 本发明的目的是提供一种光电器件及其制造方法，该光伏器件通过使用具有最佳电阻率和透射率之间的最佳关系的透明电极，能够实现稳定的高光电转换效率。 至少一个透明电极（12,16）是不含Ga的ZnO层或Ga掺杂的ZnO层，其中所添加的Ga的量相对于ZnO层内的Zn不超过5原子％，并且 通过使用含有添加的氧的稀有气体作为溅射气体的溅射法形成ZnO层，其中，相对于组合物，添加到溅射气体中的氧的量不小于0.1体积％且不大于5体积％ 体积的氧气和稀有气体。

公开(公告)号：US07587576B2

公开(公告)日：2009-09-08

申请号：US11580896

申请日：2006-10-16

申请人： Youji Nakano

发明人： Youji Nakano

IPC分类号： G06F12/00 ,  G06F19/00

CPC分类号： G06F19/701

摘要： The object of the present invention is the reduction of memory capacity in a multi-body problem processing apparatus. In a parameter storing method in multi-body problem processing for performing a molecular dynamics calculation for a plurality of particles existing in a three-dimensional space, parameters required to calculate a nonassociative force acting between particles subjected to the calculation are stored in a storage device and correspond to a combination of the particles subjected to the calculation.

摘要翻译： 本发明的目的是减少多体问题处理装置中的存储容量。 在用于对存在于三维空间中的多个粒子进行分子动力学计算的多体问题处理中的参数存储方法中，计算在经过计算的粒子之间作用的非相关力所需的参数被存储在存储装置 并且对应于经过计算的颗粒的组合。

公开(公告)号：US20060086385A1

公开(公告)日：2006-04-27

申请号：US11252987

申请日：2005-10-19

申请人： Youji Nakano ,  Nobuki Yamashita

发明人： Youji Nakano ,  Nobuki Yamashita

IPC分类号： H01L31/00

CPC分类号： H01L31/077 ,  Y02E10/50

摘要： A tandem thin film solar cell is composed of a first conductive layer formed on a transparent substrate; a first solar cell layer formed on the first conductive layer; and a second solar cell layer covering the first solar cell layer. The first conductive layer has surface irregularity, a pitch of the surface irregularity being in a range of 0.2 to 2.5 μm, and an amplitude of the surface irregularity being in a range of one-fourth to half of the pitch of the surface irregularity.

摘要翻译： 串联薄膜太阳能电池由形成在透明基板上的第一导电层构成; 形成在第一导电层上的第一太阳能电池层; 以及覆盖第一太阳能电池层的第二太阳能电池层。 第一导电层具有表面不规则性，表面凹凸的间距在0.2〜2.5μm的范围内，表面凹凸的振幅在表面凹凸的间距的四分之一到一半的范围内。