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公开(公告)号：US20120135561A1
公开(公告)日：2012-05-31
申请号：US13388297
申请日：2010-05-07
IPC分类号： H01L31/18
CPC分类号： C23C16/24 , C23C16/4402 , H01L31/022466 , H01L31/0236 , H01L31/02363 , H01L31/028 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.
摘要翻译： 目的在于获得在光电转换层中具有晶体硅i层的高效光电转换元件。 公开了一种光电转换装置的制造方法，其包括在基板上形成具有主要由晶体硅形成的i层的光电转换层的步骤。 该方法包括根据i层的拉曼比确定i层中的杂质浓度的上限的步骤; 并且形成i层，使其具有等于或小于确定的杂质浓度的上限的值。 或者，根据i层的拉曼比来确定成膜气氛中的杂质浓度的上限，同时在控制杂质 - 气体浓度的同时形成i层，使其具有相等的值 达到或小于确定的上限。
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公开(公告)号：US20120132265A1
公开(公告)日：2012-05-31
申请号：US13266770
申请日：2010-08-10
申请人： Tatsuyuki Nishimiya
发明人： Tatsuyuki Nishimiya
IPC分类号： H01L31/0264 , H01L31/0725 , H01L31/075
CPC分类号： H01L31/077 , H01L31/022475 , H01L31/03685 , H01L31/03762 , H01L31/076 , Y02E10/545 , Y02E10/548
摘要： A photovoltaic device that exhibits superior electric power generation efficiency due to suppression of diffusion of oxygen from a transparent electrode layer into a microcrystalline silicon p-layer. A photovoltaic device (100) comprises a transparent electrode layer (2) and one or more photovoltaic layers (3) stacked on a substrate (1), wherein at least one of the photovoltaic layers (3) comprises a p-type crystalline silicon layer (41), an i-type crystalline silicon layer (42) and an n-type silicon layer (43), and an amorphous silicon layer (7) is disposed between and adjacent to the transparent electrode layer (2) and the p-type crystalline silicon layer (41).
摘要翻译： 由于抑制氧从透明电极层向微晶硅p层的扩散而表现出优异的发电效率的光电器件。 光伏器件（100）包括透明电极层（2）和堆叠在衬底（1）上的一个或多个光伏层（3），其中至少一个光伏层（3）包括p型晶体硅层 （41），i型晶体硅层（42）和n型硅层（43），以及非晶硅层（7）设置在透明电极层（2）和p- 型结晶硅层（41）。
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公开(公告)号：US08507312B2
公开(公告)日：2013-08-13
申请号：US13388297
申请日：2010-05-07
IPC分类号： H01L21/00
CPC分类号： C23C16/24 , C23C16/4402 , H01L31/022466 , H01L31/0236 , H01L31/02363 , H01L31/028 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.
摘要翻译： 目的在于获得在光电转换层中具有晶体硅i层的高效光电转换元件。 公开了一种光电转换装置的制造方法，其包括在基板上形成具有主要由晶体硅形成的i层的光电转换层的步骤。 该方法包括根据i层的拉曼比确定i层中的杂质浓度的上限的步骤; 并且形成i层，使其具有等于或小于确定的杂质浓度的上限的值。 或者，根据i层的拉曼比来确定成膜气氛中的杂质浓度的上限，同时在控制杂质 - 气体浓度的同时形成i层，使其具有相等的值 达到或小于确定的上限。
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4.发明申请PHOTOELECTRIC CONVERSION DEVICE FABRICATION METHOD AND PHOTOELECTRIC CONVERSION DEVICE 审中-公开光电转换器件制造方法和光电转换器件公开(公告)号：US20110126895A1
公开(公告)日：2011-06-02
申请号：US13055297
申请日：2009-10-02
IPC分类号： H01L31/06 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/077 , H01L31/1804 , H01L31/182 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Provided is a method for fabricating a photoelectric conversion device in which current is prevented as much as possible from leaking via an intermediate contact layer separating groove. The method includes: a process of forming a top layer mainly containing amorphous silicon; a process of forming on the top layer an intermediate contact layer electrically and optically connected to the top layer; a process of removing the intermediate contact layer through irradiation with a pulsed laser and forming an intermediate contact layer separating groove that reaches the top layer to separate the intermediate contact layer; and a process of forming, on the intermediate contact layer and in the intermediate contact layer separating groove, a bottom layer that mainly contains microcrystalline silicon and that is electrically and optically connected to the intermediate contact layer. The intermediate contact layer separating groove is terminated in an i-layer of the top layer.
摘要翻译： 提供了一种制造光电转换装置的方法，其中尽可能防止电流经由中间接触层分离槽泄漏。 该方法包括：形成主要包含非晶硅的顶层的工艺; 在顶层上形成电气和光学连接到顶层的中间接触层的工艺; 通过用脉冲激光照射去除中间接触层并形成到达顶层的中间接触层分离槽以分离中间接触层的过程; 以及在中间接触层和中间接触层分离槽中形成主要包含微晶硅并且电连接和光学连接到中间接触层的底层的工艺。 中间接触层分隔槽终止在顶层的i层中。
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公开(公告)号：US20110073185A1
公开(公告)日：2011-03-31
申请号：US12995029
申请日：2008-10-30
IPC分类号： H01L31/036 , H01L21/66
CPC分类号： H01L31/075 , C23C16/24 , C23C16/509 , H01L31/028 , H01L31/03685 , H01L31/076 , H01L31/077 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion apparatus (100) having a photovoltaic layer (3) comprising a crystalline silicon i-layer (42) formed on a large surface area substrate (1) of not less than 1 m2, wherein the crystalline silicon i-layer comprises regions in which the Raman peak ratio, which is the ratio, within the substrate (1) plane, of the Raman peak intensity of the crystalline silicon phase relative to the Raman peak intensity of the amorphous silicon phase, is within a range from not less then 3.5 to not more than 8.0, and the surface area proportion for those regions within the substrate (1) plane having a Raman peak ratio of not more than 2.5 is not more than 3%. In this manner, by adjusting the crystallinity of the crystalline silicon i layer to a crystallinity that yields a high output but is prior to the occurrence of high-brightness reflective regions, thereby restricting the surface area proportion of the high-brightness reflective regions, a photovoltaic device that exhibits a high output can be realized.
摘要翻译： 一种光电转换装置（100），其具有形成在不小于1m 2的大表面积基板（1）上的晶体硅i层（42）的光电转换装置（3），其中所述晶体硅i层包括区域 其中，相对于非晶硅相的拉曼峰强度，晶体硅相的拉曼峰强度的基板（1）面内的拉曼峰值比例在不小于等于的范围内 3.5以上8.0以下，拉曼峰比不大于2.5的基板（1）面内的那些区域的表面积比不大于3％。 以这种方式，通过将晶体硅i层的结晶度调节到产生高输出但在出现高亮度反射区域之前的结晶度，从而限制高亮度反射区域的表面积比例， 能够实现高输出的光电转换装置。
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6.发明授权Photoelectric conversion device fabrication method and photoelectric conversion device 有权光电转换装置的制造方法和光电转换装置公开(公告)号：US08835253B2
公开(公告)日：2014-09-16
申请号：US13054858
申请日：2009-10-02
IPC分类号： H01L21/00 , H01L31/18 , H01L31/077 , H01L31/0392 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/03921 , H01L31/077 , H01L31/182 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer having amorphous silicon as a main component; a step of film-forming, on the top layer, an intermediate contact layer electrically and optically connected thereto; a step of separating the intermediate contact layer by removing the intermediate contact layer by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove that reaches the top layer; and a step of film-forming, on the intermediate contact layer and inside the intermediate-contact-layer separating groove, a bottom layer electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer.
摘要翻译： 提供了尽可能地防止从中间接触层经由中间接触层分离槽的电流泄漏的光电转换器件制造方法。 包括以非晶硅为主要成分的顶层成膜的步骤; 在顶层上形成与其电连接和光学连接的中间接触层的成膜步骤; 通过用脉冲激光照射中间接触层来分离中间接触层的步骤，形成到达顶层的中间接触层分隔槽; 以及在中间接触层和中间接触层分离槽内部成膜的步骤，其电层和光学连接到底层，并以微晶硅为主要成分。 使用脉冲宽度为10ps至750ps（包括端值）的脉冲激光器作为用于分离中间接触层的脉冲激光器。
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公开(公告)号：US08263193B2
公开(公告)日：2012-09-11
申请号：US12311184
申请日：2008-01-30
CPC分类号： H01L31/182 , C23C16/24 , C23C16/4557 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/2001 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： A vacuum treatment method and a vacuum treatment apparatus are provided in which the SiH2/SiH ratio does not increase even when the deposition rate is increased, thereby deterioration in the film quality is prevented and a high level of productivity can be achieved. A vacuum treatment method comprising the steps of heating a substrate (8) disposed inside a deposition chamber (6) under a reduced pressure atmosphere using a heat spreader (a heating device) (5), and supplying electric power to a discharge electrode (3) disposed in a position facing the substrate (8), thereby conducting a deposition on the substrate (8), wherein the deposition is conducted in a state where the temperature difference between the substrate (8) and the discharge electrode (3) is not more than 30° C. The deposition may also be conducted with the gap between the substrate (8) and the discharge electrode (3) set to not more than 7.5 mm.
摘要翻译： 提供一种真空处理方法和真空处理装置，其中即使沉积速率增加，SiH 2 / SiH比也不增加，从而防止膜质量的劣化并且可以实现高水平的生产率。 一种真空处理方法，其特征在于，包括以下步骤：使用散热器（加热装置）（5）在减压气氛下加热配置在沉积室（6）内部的基板（8），并将电力供给到放电电极 ），设置在与基板（8）相对的位置，从而在基板（8）上进行沉积，其中在基板（8）和放电电极（3）之间的温度差不是的情况下进行沉积 大于30℃。沉积也可以在衬底（8）和放电电极（3）之间的间隙设定为不大于7.5mm的情况下进行。
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公开(公告)号：US06307146B1
公开(公告)日：2001-10-23
申请号：US09404409
申请日：1999-09-23
申请人： Yoshiaki Takeuchi , Masayoshi Murata , Akemi Takano , Tatsuyuki Nishimiya , Syouji Morita , Tatsufumi Aoi , Tatsuji Horioka
发明人： Yoshiaki Takeuchi , Masayoshi Murata , Akemi Takano , Tatsuyuki Nishimiya , Syouji Morita , Tatsufumi Aoi , Tatsuji Horioka
IPC分类号： H01L310376
CPC分类号： H01L31/028 , H01L31/03762 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 1015 defects/cc.
摘要翻译： 非晶硅太阳能电池包括基板，形成在该基板上的透明电极，形成在该透明电极上的发电膜和形成在该发光膜上的背面电极。 发电膜通过依次层叠p型/ i型/ n型氢化非晶硅层而形成。 i型氢化非晶硅层的缺陷密度小于1015缺陷/ cc。
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公开(公告)号：US20110308735A1
公开(公告)日：2011-12-22
申请号：US13203757
申请日：2010-02-15
IPC分类号： C23F1/08 , C23C16/455 , H05H1/24 , C23C16/509
CPC分类号： C23C16/4401 , C23C16/24 , C23C16/4412 , C23C16/509 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L31/028 , H01L31/03685 , H01L31/03762 , H01L31/18 , H01L31/1804 , H01L31/1824 , H01L31/1868 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A discharge chamber formed of a ridge waveguide having ridge electrodes that are disposed facing each other and that generate plasma therebetween; a gas supplying portion that is disposed adjacent to the discharge chamber and that supplies source gas, which is used to form the plasma, toward the ridge electrodes; a substrate that is disposed at a position such that the gas supplying portion is flanked by the substrate and the discharge chamber and that is subjected to the processing by the plasma; a low-pressure vessel that accommodates thereinside at least the discharge chamber, the gas supplying portion, and the substrate; and an exhaust portion that is communicated at a position in the low-pressure vessel such that this position and the gas supplying portion are disposed on either side of the discharge chamber, and that reduces the pressure inside the low-pressure vessel are provided.
摘要翻译： 1.一种放电室，由具有脊状电极的脊状波导形成，所述脊状波纹相互配置并在其间产生等离子体; 气体供给部，与所述排出室相邻配置并将用于形成所述等离子体的源气体朝向所述脊电极供给; 基板，其设置在使得所述气体供给部分被所述基板和所述排出室侧面并且被所述等离子体进行处理的位置; 至少容纳放电室，气体供给部和基板的低压容器; 以及排气部，其在所述低压容器中的位置连通，使得所述位置和所述气体供给部配置在所述排出室的任一侧，并且降低了所述低压容器内的压力。
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10.发明申请公开(公告)号：US20110126894A1
公开(公告)日：2011-06-02
申请号：US13054858
申请日：2009-10-02
CPC分类号： H01L31/1804 , H01L31/03921 , H01L31/077 , H01L31/182 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Provided is a photoelectric conversion device fabrication method in which current leakage from an intermediate contact layer via an intermediate-contact-layer separating groove is prevented as much as possible. Included are a step of film-forming a top layer having amorphous silicon as a main component; a step of film-forming, on the top layer, an intermediate contact layer electrically and optically connected thereto; a step of separating the intermediate contact layer by removing the intermediate contact layer by irradiating it with a pulsed laser, forming an intermediate-contact-layer separating groove that reaches the top layer; and a step of film-forming, on the intermediate contact layer and inside the intermediate-contact-layer separating groove, a bottom layer electrically and optically connected thereto and having microcrystalline silicon as a main component. A pulsed laser having a pulse width of 10 ps to 750 ps, inclusive, is used as the pulsed laser for separating the intermediate contact layer.
摘要翻译： 提供了尽可能地防止从中间接触层经由中间接触层分离槽的电流泄漏的光电转换器件制造方法。 包括以非晶硅为主要成分的顶层成膜的步骤; 在顶层上形成与其电连接和光学连接的中间接触层的成膜步骤; 通过用脉冲激光照射中间接触层来分离中间接触层的步骤，形成到达顶层的中间接触层分隔槽; 以及在中间接触层和中间接触层分离槽内部成膜的步骤，其电层和光学连接到底层，并以微晶硅为主要成分。 使用脉冲宽度为10ps至750ps（包括端值）的脉冲激光器作为用于分离中间接触层的脉冲激光器。
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