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    Repairing damage to low-k dielectric materials using silylating agents
    2.
    发明申请
    Repairing damage to low-k dielectric materials using silylating agents 有权
    使用硅烷化剂修复对低k电介质材料的损坏

    公开(公告)号：US20050095840A1

    公开(公告)日：2005-05-05

    申请号：US10940682

    申请日：2004-09-15

    申请人： Anil Bhanap ,  Teresa Ramos ,  Nancy Iwamoto ,  Roger Leung ,  Ananth Naman

    发明人： Anil Bhanap ,  Teresa Ramos ,  Nancy Iwamoto ,  Roger Leung ,  Ananth Naman

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/31058 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801

    摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.

    摘要翻译： 用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。 这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。 该方法阻止了这些膜中应力诱发的空隙的形成。 通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。 之后通过通孔和沟槽填充金属并进行退火处理。 在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质膜的疏水性。

    Repair and restoration of damaged dielectric materials and films
    4.
    发明申请
    Repair and restoration of damaged dielectric materials and films 有权
    损坏的介质材料和薄膜的修复和修复

    公开(公告)号：US20060141641A1

    公开(公告)日：2006-06-29

    申请号：US10543347

    申请日：2004-01-26

    申请人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

    发明人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

    IPC分类号： H01L21/00 ,  H01L21/31

    CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

    摘要翻译： 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

    Repair and restoration of damaged dielectric materials and films
    5.
    发明授权
    Repair and restoration of damaged dielectric materials and films 有权
    损坏的介质材料和薄膜的修复和修复

    公开(公告)号：US07915181B2

    公开(公告)日：2011-03-29

    申请号：US10543347

    申请日：2004-01-26

    申请人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

    发明人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

    摘要翻译： 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

    Repairing damage to low-k dielectric materials using silylating agents
    6.
    发明授权
    Repairing damage to low-k dielectric materials using silylating agents 有权
    使用硅烷化剂修复对低k电介质材料的损坏

    公开(公告)号：US07709371B2

    公开(公告)日：2010-05-04

    申请号：US10940682

    申请日：2004-09-15

    申请人： Anil S. Bhanap ,  Teresa A. Ramos ,  Nancy Iwamoto ,  Roger Y. Leung ,  Ananth Naman

    发明人： Anil S. Bhanap ,  Teresa A. Ramos ,  Nancy Iwamoto ,  Roger Y. Leung ,  Ananth Naman

    IPC分类号： H01L21/4763 ,  H01L21/302 ,  H01L21/31

    CPC分类号： H01L21/31058 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801

    摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.

    摘要翻译： 用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。 这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。 该方法阻止了这些膜中应力诱发的空隙的形成。 通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。 之后通过通孔和沟槽填充金属并进行退火处理。 在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使薄膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质薄膜的疏水性。

    Organic compositions
    7.
    发明授权
    Organic compositions 有权

    公开(公告)号：US07049005B2

    公开(公告)日：2006-05-23

    申请号：US10160773

    申请日：2002-05-30

    申请人： Paul G. Apen ,  William B. Bedwell ,  Nancy Iwamoto ,  Boris A. Korolev ,  Kreisler S. Lau ,  Bo Li ,  Ananth Naman

    发明人： Paul G. Apen ,  William B. Bedwell ,  Nancy Iwamoto ,  Boris A. Korolev ,  Kreisler S. Lau ,  Bo Li ,  Ananth Naman

    IPC分类号： B32B9/04

    CPC分类号： H01L21/02118 ,  C08G61/02 ,  C08L65/00 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/31695 ,  H05K1/0313 ,  Y10T428/31663

    摘要： The present invention provides a composition comprising: (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; G is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1; (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate when the composition is applied to the substrate. The present compositions may be used as a dielectric substrate material, etch stop, hardmask, or air bridge in microchips, multichip modules, laminated circuit boards, or printed wiring boards. The present composition may also be used as a passive coating for enveloping a completed wafer.

    Organic compositions
    10.
    发明授权
    Organic compositions 失效
    有机成分

    公开(公告)号：US07060204B2

    公开(公告)日：2006-06-13

    申请号：US10404047

    申请日：2003-04-02

    申请人： Bo Li ,  Nancy Iwamoto ,  Boris Korolev ,  Paul G. Apen ,  Kreisler Lau ,  John G. Sikonia ,  Ananth Naman ,  Amauel Gebrebrhan ,  Nassrin Sleiman ,  Ruslan Zherebin

    发明人： Bo Li ,  Nancy Iwamoto ,  Boris Korolev ,  Paul G. Apen ,  Kreisler Lau ,  John G. Sikonia ,  Ananth Naman ,  Amauel Gebrebrhan ,  Nassrin Sleiman ,  Ruslan Zherebin

    IPC分类号： H01B1/12 ,  C08J9/38 ,  C08J9/00

    CPC分类号： H01L21/02126 ,  C08G61/02 ,  C08L65/00 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695 ,  H05K1/0313

    摘要： The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly(2-vinylnaphthalene), vinyl anthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.

    摘要翻译： 本发明提供一种组合物，其包含：（a）电介质材料; 和（b）包含至少两个稠合芳环的致孔剂，其中每个稠合芳环在其上具有至少一个烷基取代基，并且在相邻芳环上的至少两个烷基取代基之间存在键。 优选地，电介质材料是包含（a）热固性组分的组合物，其包含（1）如下所述的任选的式I的单体和（2）至少一种如下所述的式II的低聚物或聚合物，其中Q，G，h ，I，I和w如下所述，（b）致孔剂。 优选地，致孔剂选自非官能化聚苊烯均聚物，官能化聚苊烯均聚物，聚苊烯共聚物，聚降冰片烯，聚己内酯，聚（2-乙烯基萘），乙烯基蒽，聚苯乙烯，聚苯乙烯衍生物，聚硅氧烷，聚酯，聚醚，聚丙烯酸酯，脂族 聚碳酸酯，聚砜，聚丙交酯及其共混物。 本发明的组合物特别可用作微芯片，多芯片模块，层叠电路板和印刷线路板中的介电基板材料。