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    Repairing damage to low-k dielectric materials using silylating agents
    2.
    发明申请
    Repairing damage to low-k dielectric materials using silylating agents 有权
    使用硅烷化剂修复对低k电介质材料的损坏

    公开(公告)号：US20050095840A1

    公开(公告)日：2005-05-05

    申请号：US10940682

    申请日：2004-09-15

    申请人： Anil Bhanap ,  Teresa Ramos ,  Nancy Iwamoto ,  Roger Leung ,  Ananth Naman

    发明人： Anil Bhanap ,  Teresa Ramos ,  Nancy Iwamoto ,  Roger Leung ,  Ananth Naman

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/31058 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801

    摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.

    摘要翻译： 用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。 这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。 该方法阻止了这些膜中应力诱发的空隙的形成。 通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。 之后通过通孔和沟槽填充金属并进行退火处理。 在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质膜的疏水性。

    STATIONARY PHASE MATERIALS FOR MICRO GAS ANALYZER
    3.
    发明申请
    STATIONARY PHASE MATERIALS FOR MICRO GAS ANALYZER 有权
    微气体分析仪的静态相材料

    公开(公告)号：US20060228261A1

    公开(公告)日：2006-10-12

    申请号：US11276399

    申请日：2006-02-27

    申请人： Nancy Iwamoto ,  Teresa Ramos ,  Robert Roth ,  Ulrich Bonne

    发明人： Nancy Iwamoto ,  Teresa Ramos ,  Robert Roth ,  Ulrich Bonne

    IPC分类号： B32B5/02 ,  G01N7/00

    CPC分类号： B01J20/285 ,  B01J20/28 ,  B01J20/28007 ,  B01J20/28095 ,  B01J20/282 ,  B01J2220/54 ,  B82Y30/00 ,  G01N30/52 ,  G01N30/6095 ,  G01N2030/525

    摘要： Selecting a stationary phase for a fluid analyzer using certain criteria to determine an appropriate material for use in, for instance, a micro fluid analyzer. High absorption of an analyte or sample, low water sorbency and high porosity or permeability of the material may be sought. A selected material may incorporate a toughening agent using a neutral leaving group. A selected material may have a capping agent to promote hydrophobicity. A selected material may be a hydrophobic polymer. The selection of a stationary phase may involve molecular modeling.

    摘要翻译： 使用某些标准选择用于流体分析仪的固定相，以确定用于例如微流体分析仪的适当材料。 可以寻求分析物或样品的高吸收性，低吸水性和材料的高孔隙率或渗透性。 选择的材料可以使用中性离去基团掺入增韧剂。 选择的材料可以具有封端剂以促进疏水性。 所选择的材料可以是疏水性聚合物。 固定相的选择可能涉及分子建模。

    Limited-volume apparatus for forming thin film aerogels on semiconductor substrates
    6.
    发明授权
    Limited-volume apparatus for forming thin film aerogels on semiconductor substrates 有权
    用于在半导体衬底上形成薄膜气凝胶的有限体积的装置

    公开(公告)号：US6159295A

    公开(公告)日：2000-12-12

    申请号：US296911

    申请日：1999-04-22

    申请人： Alok Maskara ,  Teresa Ramos ,  Douglas M. Smith

    发明人： Alok Maskara ,  Teresa Ramos ,  Douglas M. Smith

    IPC分类号： B05C11/00 ,  H01L21/316

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  Y10S438/909

    摘要： An apparatus and method for forming thin film aerogels on semiconductor substrates is disclosed. It has been found that in order to produce defect-free nanoporous dielectrics with a controllable high porosity, it is preferable to substantially limit evaporation and condensation of pore fluid in the wet gel thin film, e.g. during gelation, during aging, and at other points prior to obtaining a dried gel. The present invention simplifies the atmospheric control needed to prevent evaporation and condensation by restricting the atmosphere in contact with the wet gel thin film to an extremely small volume. In one embodiment, a substrate 26 is held between a substrate holder 36 and a parallel plate 22, such that a substantially sealed chamber 32 exists between substrate surface 28 and chamber surface 30. Preferably, the average clearance between surfaces 28 and 30 is less than 5 mm, or more preferably, less than 1 mm. Temperature control means 34 may optionally be used to control the temperature in chamber 32. In operation, the atmosphere in chamber 32 becomes saturated by an extremely small amount of pore fluid evaporated from a wet gel thin film on surface 28, thus preventing further evaporation or condensation. This invention is ideally suited for rapid aging of thin film wet gels.

    摘要翻译： 公开了一种用于在半导体衬底上形成薄膜气凝胶的设备和方法。 已经发现，为了产生具有可控高孔隙率的无缺陷的纳米多孔电介质，优选基本上限制湿凝胶薄膜中的孔隙流体的蒸发和冷凝，例如， 在凝胶化期间，在老化期间和在获得干凝胶之前的其它点。 本发明通过将与湿凝胶薄膜接触的气氛限制到非常小的体积来简化防止蒸发和冷凝所需的大气控制。 在一个实施例中，衬底26保持在衬底保持器36和平行板22之间，使得基底表面28和腔表面30之间存在基本上密封的腔32.优选地，表面28和30之间的平均间隙小于 5mm，更优选小于1mm。 温度控制装置34可以可选地用于控制室32中的温度。在操作中，室32中的气氛通过从表面28上的湿凝胶薄膜蒸发的极少量的孔隙流体饱和，从而防止进一步蒸发或 缩合。 本发明理想地适用于薄膜湿凝胶的快速老化。

    Alcohol based precursors for producing nanoporous silica thin films
    7.
    发明授权
    Alcohol based precursors for producing nanoporous silica thin films 失效
    用于生产纳米多孔二氧化硅薄膜的醇基前体

    公开(公告)号：US6126733A

    公开(公告)日：2000-10-03

    申请号：US111081

    申请日：1998-07-07

    申请人： Stephen Wallace ,  James Drage ,  Teresa Ramos ,  Douglas M. Smith

    发明人： Stephen Wallace ,  James Drage ,  Teresa Ramos ,  Douglas M. Smith

    IPC分类号： C01B33/12 ,  C07F7/04 ,  C08G77/06 ,  C08L83/04 ,  C09D5/25 ,  C09D183/04 ,  H01L21/316 ,  C09D103/00

    CPC分类号： H01L21/02126 ,  C07F7/045 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/31695

    摘要： The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising a e C.sub.1 to C.sub.4 alkylether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.0084 mole/cm.sup.3 or less, a boiling point of about 175.degree. C. or more at atmospheric pressure and a weight average molecular weight of about 120 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.

    摘要翻译： 本发明涉及纳米多孔介电膜及其制造方法。 这种膜可用于集成电路的生产。 这种膜由烷氧基硅烷的前体制成; 相对低挥发性的溶剂组合物，其包含C1-C4亚烷基二醇的C1-C4烷基醚，其可与水和烷氧基硅烷混溶，羟基浓度为0.0084摩尔/ cm3以下，沸点为约175℃以上 在大气压下，重均分子量为约120或更大; 挥发性相对较低的溶剂组合物，其沸点低于挥发性相对较低的溶剂组合物; 任选的水和任选的催化量的酸。