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20 条记录 (耗时 0.037 秒)

    Press plate positioning apparatus for automatic drawing machine
    1.
    发明授权
    Press plate positioning apparatus for automatic drawing machine 失效
    自动拉丝机压板定位装置

    公开(公告)号：US4566194A

    公开(公告)日：1986-01-28

    申请号：US709160

    申请日：1985-03-07

    申请人： Teruo Tsunoda ,  Hiromitsu Numauchi ,  Hironobu Kurata ,  Yoichi Kawaguchi ,  Satoshi Ishii ,  Masanori Seki ,  Masahiro Iwasaki ,  Fukumasa Enomoto

    发明人： Teruo Tsunoda ,  Hiromitsu Numauchi ,  Hironobu Kurata ,  Yoichi Kawaguchi ,  Satoshi Ishii ,  Masanori Seki ,  Masahiro Iwasaki ,  Fukumasa Enomoto

    IPC分类号： G03F9/00 ,  G01B5/25

    CPC分类号： G03F9/00

    摘要： A press plate positioning apparatus for an automatic drawing machine so as to form punch holes at a punch hole forming edge of a press plate placed and fixed on a drawing board and draw registration marks at predetermined positions, has: an elongated cam plate extending in parallel with a positioning edge of the press plate which extends from the drawing board and which is perpendicular to the punch hole forming edge, the elongated cam plate being moved in a direction parallel to the positioning edge and being provided with a plurality of cam surfaces which are arranged in the longitudinal direction thereof and each of which has a plurality of stepwise horizontal surfaces and at least one inclined surface connecting the stepwise horizontal surfaces; and a plurality of positioning blocks, each of the positioning blocks being adapted not to be moved with respect to the positioning edge, being biased downward, being guided together with a corresponding gripper block such that each positioning block is vertically moved by a behavior of the cam surface upon reciprocal movement of the cam plate so as to bring the positioning edge into contact with one of stepwise vertical surfaces, and being locked in position by clicking means.

    摘要翻译： 一种用于自动拉丝机的压板定位装置，用于在放置并固定在绘图板上的压板的冲孔形成边缘上形成冲孔并在预定位置上拉制对准标记，具有：平行延伸的细长凸轮板 所述压板的定位边缘从所述绘图板延伸并且垂直于所述冲孔​​形成边缘，所述细长凸轮板在平行于所述定位边缘的方向上移动并且设置有多个凸轮表面，所述凸轮表面是 沿其长度方向布置，并且每个具有多个逐级水平表面和连接所述逐级水平表面的至少一个倾斜表面; 以及多个定位块，每个定位块适于不相对于定位边缘移动，被向下偏压，与相应的夹持块一起被引导，使得每个定位块通过该位置块的行为被垂直移动 凸轮表面在凸轮板的往复运动时，使定位边缘与逐步垂直的表面中的一个接触，并且通过点击装置被锁定就位。

    Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus
    5.
    发明申请
    Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus 审中-公开
    制造半导体薄膜的方法和半导体薄膜制造装置

    公开(公告)号：US20050272185A1

    公开(公告)日：2005-12-08

    申请号：US11147641

    申请日：2005-06-07

    申请人： Masanori Seki ,  Yoshihiro Taniguchi ,  Tetsuya Inui

    发明人： Masanori Seki ,  Yoshihiro Taniguchi ,  Tetsuya Inui

    IPC分类号： H01L21/20 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

    CPC分类号： H01L21/02675 ,  C30B13/24 ,  C30B29/06 ,  H01L21/2026 ,  H01L27/1214 ,  H01L29/78672 ,  Y10T117/10

    摘要： A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the precursor semiconductor thin film is irradiated with a predetermined reference laser beam, and a radiation initiation time or power density of a laser beam is controlled according to change in reflectance of the site irradiated with the reference laser beam. A semiconductor thin film fabrication apparatus used in the fabrication method of present invention, wherein includes at least two light sources, a sensing unit, and a control unit. The crystals formed have no difference in the length of crystal caused by variation in the energy of each radiation.

    摘要翻译： 一种包含多晶半导体区域的半导体薄膜的制造方法，其通过用至少两种类型的激光束照射前体半导体薄膜，并对前体半导体薄膜进行熔融再结晶，其中前体半导体薄膜用预定的 参考激光束，并且根据用参考激光束照射的部位的反射率的变化来控制激光束的发射时间或功率密度。 一种在本发明的制造方法中使用的半导体薄膜制造装置，其包括至少两个光源，感测单元和控制单元。 形成的晶体由于每个辐射能量的变化引起的晶体长度没有差异。

    Sheet-like gasket with overlapped peripheral portions
    6.
    发明授权
    Sheet-like gasket with overlapped peripheral portions 失效
    具有重叠周边部分的片状垫片

    公开(公告)号：US5634645A

    公开(公告)日：1997-06-03

    申请号：US464867

    申请日：1995-07-18

    申请人： Masanori Seki ,  Takahisa Ueda ,  Akira Hashimoto ,  Toshiyasu Tanimura

    发明人： Masanori Seki ,  Takahisa Ueda ,  Akira Hashimoto ,  Toshiyasu Tanimura

    IPC分类号： B29D99/00 ,  B29K27/12 ,  F16J15/10

    CPC分类号： F16J15/104

    摘要： A sheet-like gasket formed of a material having a layered internal structure, for suppressing or preventing leakage penetration, and to attain very high sealing properties together with contact-surface leakage reduction. The sheet-like gasket has two base members each including spaced apart high-density faces and having an outer end portion 1A1 and an inner end portion 1B1 of sheet-like base members 1A and 1B which are adjacent in an inner and outer relationship which are partially overlapped. The whole gasket including the overlap portion is formed by pressurization so as to have a substantially uniform thickness. As a result, double high-density layers and are formed in the overlap portion where the base members are bonded.

    摘要翻译： PCT No.PCT / JP94 / 00870 Sec。 371 1995年7月18日第 102（e）1995年7月18日PCT PCT 1994年5月30日PCT公布。 WO95 / 20732 PCT出版物 日期1995年3月8日一种由具有分层内部结构的材料形成的片状垫圈，用于抑制或防止泄漏渗透，并且与接触面泄漏减少一起获得非常高的密封性能。 片状垫片具有两个基部构件，每个基部构件具有间隔开的高密度面，并且具有内侧和外侧相邻的片状基部构件1A和1B的外端部1A1和内端部1B1， 部分重叠。 包括重叠部分的整个垫片通过加压形成，从而具有基本均匀的厚度。 结果，双层高密度层形成在与基底构件接合的重叠部分中。

    Semiconductor thin film crystallization device and semiconductor thin film crystallization method
    8.
    发明申请
    Semiconductor thin film crystallization device and semiconductor thin film crystallization method 审中-公开
    半导体薄膜结晶装置和半导体薄膜结晶方法

    公开(公告)号：US20080084901A1

    公开(公告)日：2008-04-10

    申请号：US11982568

    申请日：2007-11-02

    申请人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

    发明人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

    IPC分类号： H01S3/10 ,  H01L31/0248

    CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/78672 ,  H01L29/78696

    摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

    摘要翻译： 第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。 第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以形成与第二激光束相似的第二光束点 配置到第一束斑并且包含第一束斑。 在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。 由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。 因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。