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    Non-volatile semiconductor memory device
    1.
    发明授权
    Non-volatile semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号：US4774556A

    公开(公告)日：1988-09-27

    申请号：US887625

    申请日：1986-07-21

    申请人： Tetsuo Fujii ,  Nobuyoshi Sakakibara ,  Toshio Sakakibara ,  Hiroshi Iwasaki

    发明人： Tetsuo Fujii ,  Nobuyoshi Sakakibara ,  Toshio Sakakibara ,  Hiroshi Iwasaki

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/78 ,  H01L29/86

    CPC分类号： H01L27/11568 ,  H01L21/28273 ,  H01L27/11556 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/7883 ,  H01L27/115 ,  H01L29/4236

    摘要： A non-volatile semiconductor memory device comprises a semiconductor substrate of a first conduction type, an impurity buried layer of a second conduction type formed at the surface of the semiconductor substrate for constituting either one of a drain region or a source region, an epitaxial layer of a second conduction type formed at the surface of said impurity buried layer, an insulatiang partition wall extended vertically from the surface of the epitaxial layer surrounding operation regions in the impurity buried layer for defining the operation regions therein, at least one electron holding portion extended vertically with a predetermined distance from the operation regions and disposed within the insulating partition wall apart from the operation region, the impurity buried layer or the drain region by an insulation film of such a thickness as causing a tunnel effect, control gates disposed within the insulation partition wall disposed on every electron holding portions on the side opposite to the operation regions and extended vertically with a certain gap from the electron maintaining portions, and a control gate disposed within the insulating partition wall on every electron holding portions on the opposite side to the operation region extended vertically and with a certain gap to the electron holding portions, and an impurity region of a second conduction type formed at the surface of the operation region for constituting the other of the drain region or the source region.

    摘要翻译： 非易失性半导体存储器件包括：第一导电类型的半导体衬底，形成在半导体衬底的表面的第二导电类型的杂质掩埋层，用于构成漏极区域或源极区域中的任一个，外延层 形成在所述杂质掩埋层的表面上的第二导电类型的绝缘分隔壁，包围在所述杂质掩埋层中的围绕所述杂质掩埋层的操作区域的外延层的表面垂直延伸的绝缘隔壁，用于限定其中的操作区域，至少一个电子保持部分延伸 垂直于操作区域预定的距离并且设置在与操作区域隔离的绝缘分隔壁内，通过具有隧道效应的厚度的绝缘膜的杂质掩埋层或漏极区域，设置在绝缘体内的控制栅极 分隔壁设置在侧面上的每个电子保持部分上 e与操作区域相对并且与电子维持部分具有一定间隙垂直延伸;以及控制栅极，设置在绝缘分隔壁内的每个电子保持部分上，与操作区域相对的一侧垂直延伸并且具有一定间隙 电子保持部分和形成在用于构成漏极区域或源极区域中的另一个的操作区域的表面处的第二导电类型的杂质区域。

    Method of making a nonvolatile semiconductor memory apparatus with a floating gate
    2.
    发明授权
    Method of making a nonvolatile semiconductor memory apparatus with a floating gate 失效
    制造具有浮动栅极的非易失性半导体存储装置的方法

    公开(公告)号：US5017505A

    公开(公告)日：1991-05-21

    申请号：US313898

    申请日：1989-02-23

    申请人： Tetsuo Fujii ,  Toshio Sakakibara ,  Nobuyoshi Sakakibara

    发明人： Tetsuo Fujii ,  Toshio Sakakibara ,  Nobuyoshi Sakakibara

    IPC分类号： H01L29/788

    CPC分类号： H01L29/7883 ,  Y10S438/964

    摘要： A first polysilicon film serving as an erase gate is deposited on the major surface of a semiconductor substrate on which a field oxide film is formed, so that the surface of the first polysilicon film is roughened. The surface of the first polysilicon film is thermally oxidized to form a first thermal oxide film thereon. During the oxidation, the roughened surface of the first polysilicon film is flattened, and is duplicated by the surface of the first thermal oxide film. A second polysilicon film is deposited on the roughened surface of the first thermal oxide film. The back surface of the second polysilicon film is roughened by the roughened surface of the first thermal oxide film. In this case, the surface of the second polysilicon film is also roughened. The roughened surface of the second polysilicon film is thermally oxidized in the same manner as described above to flatten its surface and to form a second thermal oxide film, the surface of which is roughened. A third polysilicon film serving as a write gate is formed on the second thermal oxide film.

    摘要翻译： 用作擦除栅极的第一多晶硅膜沉积在其上形成有场氧化膜的半导体衬底的主表面上，使得第一多晶硅膜的表面被粗糙化。 第一多晶硅膜的表面被热氧化以在其上形成第一热氧化膜。 在氧化期间，第一多晶硅膜的粗糙化表面变平，并被第一热氧化膜的表面复制。 在第一热氧化膜的粗糙化表面上沉积第二多晶硅膜。 第二多晶硅膜的背面被第一热氧化膜的粗糙化表面粗糙化。 在这种情况下，第二多晶硅膜的表面也被粗糙化。 第二多晶硅膜的粗糙化表面以与上述相同的方式被热氧化以使其表面变平，并形成第二热氧化膜，其表面被粗糙化。 在第二热氧化膜上形成用作写入栅极的第三多晶硅膜。

    Air cleaner using ionic wind
    5.
    发明授权
    Air cleaner using ionic wind 失效
    空气净化器使用离子风

    公开(公告)号：US4689056A

    公开(公告)日：1987-08-25

    申请号：US902014

    申请日：1986-08-29

    申请人： Hiroki Noguchi ,  Toshiki Kobayashi ,  Akira Fukami ,  Tadashi Hattori ,  Nobuyoshi Sakakibara ,  Teiichi Nabeta

    发明人： Hiroki Noguchi ,  Toshiki Kobayashi ,  Akira Fukami ,  Tadashi Hattori ,  Nobuyoshi Sakakibara ,  Teiichi Nabeta

    IPC分类号： B03C3/12 ,  B03C3/00

    CPC分类号： B03C3/12

    摘要： An air cleaner using an ionic wind having discharge electrodes, a counter electrode arranged downstream of the discharge electrodes, and first and second parallel plate electrodes arranged alternately downstream of the counter electrode. The second parallel plate electrodes are connected to a potential pick-up electrode arranged in the vicinity of the discharge electrodes. The first and second parallel plate electrodes which are arranged alternately serve as dust collecting electrodes.

    摘要翻译： 使用具有放电电极的离子风的空气净化器，配置在放电电极下游的对置电极以及交替配置在对置电极下游的第一，第二平行板电极。 第二平行板电极连接到布置在放电电极附近的吸电极。 交替排列的第一和第二平行板电极用作集尘电极。

    High temperature superconducting thin film deposition method
    6.
    发明授权
    High temperature superconducting thin film deposition method 失效
    高温超导薄膜沉积法

    公开(公告)号：US5900391A

    公开(公告)日：1999-05-04

    申请号：US756555

    申请日：1996-11-26

    申请人： Nobuyoshi Sakakibara ,  Hiroki Hoshizaki ,  Yoshiki Ueno

    发明人： Nobuyoshi Sakakibara ,  Hiroki Hoshizaki ,  Yoshiki Ueno

    IPC分类号： C01G1/00 ,  C01G3/00 ,  C04B35/622 ,  C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  H01B12/06 ,  H01B13/00 ,  H01L39/02 ,  H01L39/24 ,  H01P3/08

    CPC分类号： H01L39/2435 ,  C04B35/62218 ,  C23C14/087 ,  C23C14/34 ,  C23C14/541 ,  Y10S505/731

    摘要： Herein disclosed is a method for depositing a high Tc superconducting thin film. The superconducting thin film is deposited on one surface of a substrate. The substrate is exposed to an electromagnetic wave to heat the substrate during the process for depositing the superconducting thin film. Before the processes for depositing the superconducting thin film and exposing the substrate to the electromagnetic wave, a dummy film is formed on the other surface of the substrate. The dummy film has absorbency of the electromagnetic wave which is higher than that of the substrate. The dummy film together with the substrate is exposed to the electromagnetic wave while the superconducting thin film is deposited on the one surface of the substrate. The superconducting thin film thus deposited has superconductivity and high quality crystal structure.

    摘要翻译： 这里公开了一种沉积高Tc超导薄膜的方法。 超导薄膜沉积在衬底的一个表面上。 在沉积超导薄膜的过程中，将衬底暴露于电磁波以加热衬底。 在沉积超导薄膜并将衬底暴露于电磁波的过程之前，在衬底的另一个表面上形成虚拟膜。 该虚拟膜具有比基板高的电磁波的吸收性。 将虚设膜与基板一起暴露于电磁波，同时将超导薄膜沉积在基板的一个表面上。 这样沉积的超导薄膜具有超导性和高质量的晶体结构。

    Superconducting oxide thin film device
    7.
    发明授权
    Superconducting oxide thin film device 失效
    超导氧化物薄膜器件

    公开(公告)号：US5635730A

    公开(公告)日：1997-06-03

    申请号：US467122

    申请日：1995-06-06

    申请人： Nobuyoshi Sakakibara

    发明人： Nobuyoshi Sakakibara

    IPC分类号： C01G1/00 ,  C01G3/00 ,  C23C14/08 ,  C30B29/22 ,  H01L39/02 ,  H01L39/24 ,  H01L29/06 ,  H01L39/22

    CPC分类号： H01L39/2461

    摘要： A superconducting oxide thin film device is composed of a LaAlO.sub.3 substrate and a YBCO thin film with a BaCeO.sub.3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the buffer layer. The buffer layer also inhibits peeling of the film from the substrate and diffusion of Ba from the film into the substrate.

    摘要翻译： 超导氧化物薄膜器件由LaAlO 3衬底和设置在两者之间的BaCeO 3缓冲层的YBCO薄膜组成。 通过缓冲层的存在，膜和基板之间的粘附性增加。 缓冲层还抑制膜从基板剥离并将Ba从膜扩散到基板中。

    Air cleaning apparatus
    9.
    发明授权
    Air cleaning apparatus 失效
    空气净化装置

    公开(公告)号：US4673416A

    公开(公告)日：1987-06-16

    申请号：US874820

    申请日：1986-06-12

    申请人： Nobuyoshi Sakakibara ,  Tadashi Hattori ,  Kazuhiko Miura ,  Hiroki Noguchi ,  Akira Fukami ,  Teiichi Nabeta

    发明人： Nobuyoshi Sakakibara ,  Tadashi Hattori ,  Kazuhiko Miura ,  Hiroki Noguchi ,  Akira Fukami ,  Teiichi Nabeta

    IPC分类号： B03C3/12 ,  B03C3/41 ,  B03C3/60 ,  B03C3/66 ,  F24F1/00

    CPC分类号： B03C3/12 ,  B03C3/60 ,  B03C3/66

    摘要： An air cleaning apparatus having an electrical dust collecting section has discharge electrodes, electrical field forming electrodes arranged parallel to the flow of charged particles, and dust collecting electrodes each of which is arranged between corresponding two adjacent electrical field forming electrodes to be parallel thereto. One high voltage power source is arranged to generate a potential difference between the discharge electrodes and the dust collecting electrodes. Another high voltage power source is arranged to generate a potential difference between the electrical field forming electrodes and the dust collecting electrodes. Negative electrodes consisting of either the electrical field forming electrodes or the dust collecting electrodes are covered by insulator members.

    摘要翻译： 具有电集尘部的空气净化装置具有放电电极，与带电粒子的流动平行设置的电场形成电极，以及各自与相邻的两个相邻的电场形成电极平行的集尘电极。 一个高压电源被布置成产生放电电极和集尘电极之间的电位差。 布置另一高压电源以产生电场形成电极和集尘电极之间的电位差。 由电场形成电极或集尘电极组成的负极由绝缘体部件覆盖。