公开(公告)号：US09893008B2

公开(公告)日：2018-02-13

申请号：US15193355

申请日：2016-06-27

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Byron Williams ,  Shrinivasan Jaganathan ,  David Larkin ,  Dhaval Atul Saraiya

IPC: H05K1/09 ,  H01L23/522 ,  H05K1/03 ,  H05K1/16 ,  H01L23/62 ,  H05K1/02 ,  H05K3/46 ,  H05K3/00 ,  H05K1/11 ,  H01L23/498 ,  H01L23/528 ,  H01L23/532 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L23/5223 ,  H01L23/49811 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L23/538 ,  H01L23/62 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/14335 ,  H05K1/0256 ,  H05K1/0257 ,  H05K1/0262 ,  H05K1/0306 ,  H05K1/0346 ,  H05K1/09 ,  H05K1/112 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0088 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/0175 ,  H05K2201/0191 ,  H05K2201/0195 ,  H05K2201/0746 ,  H05K2201/09409 ,  H05K2201/0949 ,  H05K2201/09672 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: An electronic isolation device is formed on a monolithic substrate and includes a plurality of passive isolation components. The isolation components are formed in three metal levels. The first metal level is separated from the monolithic substrate by an inorganic PMD layer. The second metal level is separated from the first metal level by a layer of silicon dioxide. The third metal level is separated from the second metal level by at least 20 microns of polyimide or PBO. The isolation components include bondpads on the third metal level for connections to other devices. A dielectric layer is formed over the third metal level, exposing the bondpads. The isolation device contains no transistors.

公开(公告)号：US09408302B2

公开(公告)日：2016-08-02

申请号：US14643230

申请日：2015-03-10

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Byron Williams ,  Shrinivasan Jaganathan ,  David Larkin ,  Dhaval Atul Saraiya

IPC: H05K1/09 ,  H05K1/03 ,  H05K1/16 ,  H01L23/62 ,  H05K1/02 ,  H05K3/46 ,  H05K3/00 ,  H05K1/11

CPC classification number: H01L23/5223 ,  H01L23/49811 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L23/538 ,  H01L23/62 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/14335 ,  H05K1/0256 ,  H05K1/0257 ,  H05K1/0262 ,  H05K1/0306 ,  H05K1/0346 ,  H05K1/09 ,  H05K1/112 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0088 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/0175 ,  H05K2201/0191 ,  H05K2201/0195 ,  H05K2201/0746 ,  H05K2201/09409 ,  H05K2201/0949 ,  H05K2201/09672 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: An electronic isolation device is formed on a monolithic substrate and includes a plurality of passive isolation components. The isolation components are formed in three metal levels. The first metal level is separated from the monolithic substrate by an inorganic PMD layer. The second metal level is separated from the first metal level by a layer of silicon dioxide. The third metal level is separated from the second metal level by at least 20 microns of polyimide or PBO. The isolation components include bondpads on the third metal level for connections to other devices. A dielectric layer is formed over the third metal level, exposing the bondpads. The isolation device contains no transistors.

公开(公告)号：US09006584B2

公开(公告)日：2015-04-14

申请号：US13960406

申请日：2013-08-06

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield ,  Byron Williams ,  Shrinivasan Jaganathan ,  David Larkin ,  Dhaval Atul Saraiya

IPC: H05K1/16 ,  H05K1/03 ,  H05K1/09 ,  H05K3/00

CPC classification number: H01L23/5223 ,  H01L23/49811 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L23/538 ,  H01L23/62 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/48463 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/14335 ,  H05K1/0256 ,  H05K1/0257 ,  H05K1/0262 ,  H05K1/0306 ,  H05K1/0346 ,  H05K1/09 ,  H05K1/112 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0088 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/0175 ,  H05K2201/0191 ,  H05K2201/0195 ,  H05K2201/0746 ,  H05K2201/09409 ,  H05K2201/0949 ,  H05K2201/09672 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: An electronic isolation device is formed on a monolithic substrate and includes a plurality of passive isolation components. The isolation components are formed in three metal levels. The first metal level is separated from the monolithic substrate by an inorganic PMD layer. The second metal level is separated from the first metal level by a layer of silicon dioxide. The third metal level is separated from the second metal level by at least 20 microns of polyimide or PBO. The isolation components include bondpads on the third metal level for connections to other devices. A dielectric layer is formed over the third metal level, exposing the bondpads. The isolation device contains no transistors.

Abstract translation: 电子隔离装置形成在单片基板上并且包括多个被动隔离部件。 隔离元件形成三个金属层。 通过无机PMD层将第一金属层与整体式衬底分离。 第二金属层与第一金属层分开一层二氧化硅。 第三金属层与第二金属层相隔至少20微米的聚酰亚胺或PBO。 隔离组件包括用于连接到其他设备的第三金属层上的焊盘。 在第三金属层上形成介电层，露出粘合垫。 隔离器件不含晶体管。