STRAIN-INDUCED SHIFT MITIGATION IN SEMICONDUCTOR PACKAGES

    公开(公告)号:US20220415824A1

    公开(公告)日:2022-12-29

    申请号:US17822960

    申请日:2022-08-29

    摘要: A semiconductor package includes a semiconductor die including a semiconductor substrate, a strain-sensitive component located within or over a metallization layer of the semiconductor die, wherein a parameter of the strain-sensitive component exhibits a longitudinal shift due to a longitudinal strain and a transverse shift due to a transverse strain, and a mold compound covering the semiconductor die and the strain-sensitive component. The semiconductor package, including the semiconductor die and the mold compound, defines an orthogonal package-induced strain ratio on the strain-sensitive component on the semiconductor die surface. The strain-sensitive component is located such that the longitudinal shift due to package-induced strains offsets the transverse shift due to the package-induced strains.

    FLIP CHIP SEMICONDUCTOR DEVICE PACKAGE WITH MOLD COMPOUND SEAL

    公开(公告)号:US20230102688A1

    公开(公告)日:2023-03-30

    申请号:US17487318

    申请日:2021-09-28

    IPC分类号: H01L23/10 H01L23/06 H01L21/67

    摘要: In a described example, an apparatus includes: a semiconductor die with a component on a device side surface; a die seal surrounding the component on the device side surface; a package substrate having bond pads on a die side surface; a package substrate seal formed on the die side surface of the package substrate corresponding to the die seal on the semiconductor die; the semiconductor die flip chip mounted on the bond pads of the package substrate with solder joints connecting post connects on the semiconductor die to the bond pads of the package substrate; a mold compound seal formed by the die seal and the package substrate seal; and mold compound covering a portion of the semiconductor die, a portion of the die side of the package substrate, and contacting the mold compound seal, the mold compound spaced from the component.

    Strain-induced shift mitigation in semiconductor packages

    公开(公告)号:US11430747B2

    公开(公告)日:2022-08-30

    申请号:US17192511

    申请日:2021-03-04

    摘要: A semiconductor package includes a semiconductor die including a semiconductor substrate, a strain-sensitive component located within or over a metallization layer of the semiconductor die, wherein a parameter of the strain-sensitive component exhibits a longitudinal shift due to a longitudinal strain and a transverse shift due to a transverse strain, and a mold compound covering the semiconductor die and the strain-sensitive component. The semiconductor package, including the semiconductor die and the mold compound, defines an orthogonal package-induced strain ratio on the strain-sensitive component on the semiconductor die surface. The strain-sensitive component is located such that the longitudinal shift due to package-induced strains offsets the transverse shift due to the package-induced strains.

    STRAIN-INDUCED SHIFT MITIGATION IN SEMICONDUCTOR PACKAGES

    公开(公告)号:US20220208695A1

    公开(公告)日:2022-06-30

    申请号:US17192511

    申请日:2021-03-04

    摘要: A semiconductor package includes a semiconductor die including a semiconductor substrate, a strain-sensitive component located within or over a metallization layer of the semiconductor die, wherein a parameter of the strain-sensitive component exhibits a longitudinal shift due to a longitudinal strain and a transverse shift due to a transverse strain, and a mold compound covering the semiconductor die and the strain-sensitive component. The semiconductor package, including the semiconductor die and the mold compound, defines an orthogonal package-induced strain ratio on the strain-sensitive component on the semiconductor die surface. The strain-sensitive component is located such that the longitudinal shift due to package-induced strains offsets the transverse shift due to the package-induced strains.