公开(公告)号：US07173160B2

公开(公告)日：2007-02-06

申请号：US10622185

申请日：2003-07-16

申请人： Theo Maesen ,  Robert M. Carlson ,  Jeremy E. Dahl ,  Shenggao Liu ,  Hye Kyung C. Timken ,  Waqar R. Qureshi

发明人： Theo Maesen ,  Robert M. Carlson ,  Jeremy E. Dahl ,  Shenggao Liu ,  Hye Kyung C. Timken ,  Waqar R. Qureshi

IPC分类号： C07C13/28 ,  C07C7/148 ,  C07C7/00 ,  C10G47/00

CPC分类号： C10G49/00 ,  C07C7/163 ,  C10G45/10 ,  C10G45/40 ,  C10G45/52 ,  C10G47/00 ,  C10G47/14 ,  C10G65/12

摘要： Hydroprocessing such as hydrocracking is advantageously employed in processes for the recovery and purification of higher diamondoids from petroleum feedstocks. Hydrocracking and other hydroprocesses degrade nondiamondoid contaminants.

摘要翻译： 加氢处理如加氢裂化有利地用于从石油原料中回收和纯化较高级的金刚石。 加氢裂化和其他加氢处理会降低非偶联物污染物。

公开(公告)号：US07795468B2

公开(公告)日：2010-09-14

申请号：US10313804

申请日：2002-12-06

申请人： Shenggao Liu ,  Robert M. Carlson ,  Jeremy E. Dahl ,  Waqar R. Qureshi

发明人： Shenggao Liu ,  Robert M. Carlson ,  Jeremy E. Dahl ,  Waqar R. Qureshi

IPC分类号： C07C61/12 ,  C07C61/28 ,  C07D221/22 ,  C07C275/26 ,  C07C235/26 ,  C07C211/16

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C43/188 ,  C07C47/347 ,  C07C49/423 ,  C07C69/753 ,  C07C205/05 ,  C07C211/38 ,  C07C211/50 ,  C07C217/90 ,  C07C233/58 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00

摘要： This invention is directed to functionalized higher diamondoids having at least one functional group. Preferably these derivatives have the following Formula I: wherein D is a higher diamondoid nucleus and wherein R1, R2, R3, R4, R5 and R6 are independently selected from a group consisting of hydrogen and functional groups, provided that there is at least one functional group on the derivative. The functionalized higher diamondoid compounds may also be of the formula D—L—(D)n wherein D is a higher diamondoid nucleus and L is a linking group and n is 1 or more. The functionalized higher diamondoid compounds additionally may be of the formula R38—D—D—R39 wherein D is a higher diamondoid nucleus and R38 and R39 are substituents.

摘要翻译： 本发明涉及具有至少一个官能团的官能化的更高级的金刚石。 优选地，这些衍生物具有以下式I：其中D是较高的金刚石核，并且其中R 1，R 2，R 3，R 4，R 5和R 6独立地选自氢和官能团，条件是存在至少一个官能 组合导数。 官能化的高级金刚石化合物也可以是式D-L-（D）n，其中D是较高的金刚石核，L是连接基团，n是1或更多。 官能化的高级金刚石化合物另外可以是式R38-D-D-R39，其中D是较高的金刚石核，R38和R39是取代基。

公开(公告)号：US07312562B2

公开(公告)日：2007-12-25

申请号：US11029906

申请日：2005-01-04

申请人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

发明人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC分类号： H01J1/00 ,  H01J1/62 ,  B01J3/06

CPC分类号： H01J1/3048 ,  H01J2201/30457

摘要： Novel heterodiamondoid-containing field emission devices (FED's) are disclosed herein. In one embodiment of the present invention, the heteroatom of the heterodiamondoid comprises an electron-donating species (such as nitrogen) as part of the cathode or electron-emitting component of the field emission device.

摘要翻译： 本文公开了新型异二茂金属的场致发射器件（FED）。 在本发明的一个实施方案中，杂二环类物质的杂原子包括作为场致发射器件的阴极或电子发射成分的一部分的给电子物质（例如氮）。

公开(公告)号：US07276222B2

公开(公告)日：2007-10-02

申请号：US10892037

申请日：2004-07-14

申请人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

发明人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC分类号： C30B29/04

CPC分类号： C07C4/00 ,  B82Y10/00 ,  B82Y30/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J1/3048 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L23/4334 ,  H01L23/49513 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L35/22 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, thermally conductive adhesive films, and thermally conductive films in thermoelectric cooling devices. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

摘要翻译： 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，导热粘合剂膜和热电冷却装置中的导热膜。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US07884256B2

公开(公告)日：2011-02-08

申请号：US11013638

申请日：2004-12-17

申请人： Shenggao Liu ,  Robert M. Carlson ,  Jeremy E. Dahl

发明人： Shenggao Liu ,  Robert M. Carlson ,  Jeremy E. Dahl

IPC分类号： C07C13/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C29/124 ,  C07C29/143 ,  C07C29/149 ,  C07C29/48 ,  C07C31/137 ,  C07C31/278 ,  C07C37/20 ,  C07C39/17 ,  C07C41/16 ,  C07C43/188 ,  C07C45/28 ,  C07C47/347 ,  C07C49/423 ,  C07C51/353 ,  C07C67/08 ,  C07C67/14 ,  C07C69/08 ,  C07C69/38 ,  C07C69/54 ,  C07C69/604 ,  C07C205/05 ,  C07C211/38 ,  C07C211/50 ,  C07C217/90 ,  C07C233/58 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  C07C69/608 ,  C07C61/125

摘要： Higher diamondoid derivatives capable of taking part in polymerization reactions are disclosed as well as intermediates to these derivatives, polymers formed from these derivatives and methods for preparing the polymers.

摘要翻译： 公开了能够参与聚合反应的高级金刚石衍生物以及这些衍生物的中间体，由这些衍生物形成的聚合物和制备聚合物的方法。

公开(公告)号：US07649056B2

公开(公告)日：2010-01-19

申请号：US11335916

申请日：2006-01-18

申请人： Shenggao Liu ,  Robert M. Carlson ,  Jeremy E. Dahl

发明人： Shenggao Liu ,  Robert M. Carlson ,  Jeremy E. Dahl

IPC分类号： C08F20/00

CPC分类号： C07C49/617 ,  C07C23/20 ,  C07C49/423 ,  C07C49/613 ,  C07C61/29 ,  C07D221/22 ,  C07D311/96 ,  C07D313/06 ,  C07D335/04 ,  C07D471/10 ,  C07F9/65683

摘要： This invention is related to heteroatom containing diamondoids (i.e., “heterodiamondoids”) which are compounds having a diamondoid nucleus in which one or more of the diamondoid nucleus carbons has been substitutionally replaced with a noncarbon atom. These heteroatom substituents impart desirable properties to the diamondoid. In addition, the heterodiamondoids are functionalized affording compounds carrying one or more functional groups covalently pendant therefrom. This invention is further related to polymerizable functionalized heterodiamondoids. In a preferred aspect of this invention the diamondoid nuclei are triamantane and higher diamondoid nuclei. In another preferred aspect, the heteroatoms are selected to give rise to diamondoid materials which can serve as n- and p-type materials in electronic devices can serve as optically active materials.

摘要翻译： 本发明涉及含有杂原子的类金刚石（即“异二亚类”），它们是具有金刚石核的化合物，其中一个或多个金刚石核碳被替代为非碳原子。 这些杂原子取代基赋予金刚石所需的性质。 此外，异二亚甲基二羧酸被官能化，从而提供携带一个或多个共价悬挂的官能团的化合物。 本发明进一步涉及可聚合的官能化异二聚体。 在本发明的优选方面，金刚石核是三金刚烷和更高的金刚石核。 在另一个优选的方面，选择这些杂原子以产生可用作电子器件中的n-型和p-型材料的类金刚石材料，可用作光学活性材料。

公开(公告)号：US20090075203A1

公开(公告)日：2009-03-19

申请号：US12200703

申请日：2008-08-28

申请人： Shenggao Liu ,  Jeremy E. Dahl ,  Robert M. Carlson

发明人： Shenggao Liu ,  Jeremy E. Dahl ,  Robert M. Carlson

IPC分类号： G03F7/004 ,  C08G61/00

CPC分类号： C07C69/54 ,  C07C35/44 ,  C07C2603/86 ,  C07C2603/90 ,  G03F7/0397 ,  Y10S430/111

摘要： Novel positive-working photoresist compositions are disclosed. The monomers of the base resin of the resist contain diamondoid-containing pendant groups higher than adamantane in the polymantane series; for example, diamantane, triamantane, tetramantane, pentamantane, hexamantane, etc. The diamondoid-containing pendant group may have hydrophilic-enhancing substituents such as a hydroxyl group, and may contain a lactone group. Advantages of the present compositions include enhanced resolution, sensitivity, and adhesion to the substrate.

摘要翻译： 公开了新型正性光致抗蚀剂组合物。 抗蚀剂的基体树脂的单体在聚曼烷系列中含有高于金刚烷的含金刚石的侧基; 例如，金刚烷，四金刚烷，五金刚烷，六
金刚等。含金刚石的侧基可以具有亲水性增强取代基，例如羟基，可含有内酯基。 本发明组合物的优点包括提高分辨率，灵敏度和对基材的粘合性。

公开(公告)号：US07306671B2

公开(公告)日：2007-12-11

申请号：US10784915

申请日：2004-02-24

申请人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

发明人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC分类号： C30B29/02

CPC分类号： H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, peritamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

摘要翻译： 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的金刚石包括四聚烷，四金刚烷，六金刚烷，七金刚烷，八甲烷，非金刚烷，十烷和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US07273598B2

公开(公告)日：2007-09-25

申请号：US10892080

申请日：2004-07-14

申请人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

发明人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC分类号： C30B29/04

CPC分类号： C07C4/00 ,  B82Y10/00 ,  B82Y30/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J1/3048 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L23/4334 ,  H01L23/49513 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L35/22 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, passivation films for integrated circuit devices (ICs). The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

摘要翻译： 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于用于集成电路器件（IC）的钝化膜。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US06783589B2

公开(公告)日：2004-08-31

申请号：US10047044

申请日：2002-01-14

申请人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

发明人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC分类号： C30B2904

CPC分类号： H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

摘要翻译： 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。