Hydrogen implantation with reduced radiation
    1.
    发明授权
    Hydrogen implantation with reduced radiation 有权
    氢放电减少辐射

    公开(公告)号:US08101488B1

    公开(公告)日:2012-01-24

    申请号:US12978558

    申请日:2010-12-25

    IPC分类号: H01L21/336 H01L21/425

    摘要: Embodiments of the present invention provide for a system for accelerating hydrogen ions. A hydrogen generator holding a supply of water is configured to generate a flow of hydrogen gas from the supply of water. An ion source structure is configured to generate a plurality of hydrogen ions from the flow of hydrogen gas. An accelerator tube is configured to accelerate the plurality of hydrogen ions. The supply of water has an isotopic ratio of deuterium that is smaller than the isotopic ratio of deuterium in Vienna Standard Mean Ocean Water.

    摘要翻译: 本发明的实施例提供一种用于加速氢离子的系统。 保持供水的氢发生器被配置为从水的供应产生氢气流。 离子源结构被配置为从氢气流中产生多个氢离子。 加速管构造成加速多个氢离子。 水的供应与氘的同位素比值小于维也纳标准平均海水中氘的同位素比。

    D.C. charged particle accelerator and a method of accelerating charged particles
    2.
    发明授权
    D.C. charged particle accelerator and a method of accelerating charged particles 有权
    D.C.带电粒子促进剂和加速带电粒子的方法

    公开(公告)号:US08723452B2

    公开(公告)日:2014-05-13

    申请号:US13186513

    申请日:2011-07-20

    IPC分类号: H05H7/22

    CPC分类号: H05H5/04

    摘要: A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

    摘要翻译: 广告。 C。 带电粒子加速器包括通过绝缘垫片间隔开的加速器电极,其限定相邻电极对之间的加速间 单独调节的间隙电压施加在每个相邻的加速器电极对之间。 在一个实施例中,从多级Cockcroft Walton型电压倍增器电路的级点向间隙电极提供直接连接。 所描述的实施例使得能够将离子束加速到高能量和高束流,具有良好的加速器稳定性。

    D.C. Charged Particle Accelerator and A Method of Accelerating Charged Particles
    3.
    发明申请
    D.C. Charged Particle Accelerator and A Method of Accelerating Charged Particles 有权
    带电粒子加速器和加速带电粒子的方法

    公开(公告)号:US20120146555A1

    公开(公告)日:2012-06-14

    申请号:US13186513

    申请日:2011-07-20

    IPC分类号: H05H7/22

    CPC分类号: H05H5/04

    摘要: A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

    摘要翻译: 广告。 C。 带电粒子加速器包括通过绝缘垫片间隔开的加速器电极,其限定相邻电极对之间的加速间隙。 单独调节的间隙电压施加在每个相邻的加速器电极对之间。 在一个实施例中,从多级Cockcroft Walton型电压倍增器电路的级点向间隙电极提供直接连接。 所描述的实施例使得能够将离子束加速到高能量和高束流,具有良好的加速器稳定性。

    Ion source assembly for ion implantation apparatus and a method of generating ions therein
    4.
    发明授权
    Ion source assembly for ion implantation apparatus and a method of generating ions therein 有权
    用于离子注入装置的离子源组件及其中产生离子的方法

    公开(公告)号:US07939812B2

    公开(公告)日:2011-05-10

    申请号:US12494272

    申请日:2009-06-30

    摘要: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon.

    摘要翻译: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生,提供具有至少100mm主横截面直径的抽出的带状束。 离子源可以使用无芯鞍型线圈来提供限制离子源中的等离子体的均匀场。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。

    Vacuum bearing structure and a method of supporting a movable member
    5.
    发明授权
    Vacuum bearing structure and a method of supporting a movable member 失效
    真空轴承结构和支撑活动件的方法

    公开(公告)号:US06515288B1

    公开(公告)日:2003-02-04

    申请号:US09527029

    申请日:2000-03-16

    IPC分类号: G01F2300

    摘要: A vacuum bearing structure comprises a combination of a planar gas bearing with a differentially-pumped vacuum seal. The bearing surface and the vacuum seal surfaces are formed of a porous material divided into a first outer region through which bearing gas can percolate to provide support and an inner second region providing the vacuum seal. An exhaust groove separates the two regions so that bearing gas can flow to atmosphere. The resulting structure can operate at a lower fly height to reduce loading on the differentially-pumped vacuum seal. The structure is particularly useful for motion feedthroughs into vacuum processes such as ion implantation.

    摘要翻译: 真空承载结构包括平面气体轴承与差动抽真空密封件的组合。 轴承表面和真空密封表面由被分成第一外部区域的多孔材料形成,轴承气体可以通过该第一外部区域渗透以提供支撑,以及提供真空密封的内部第二区域。 排气槽分离两个区域,使得轴承气体可以流到大气中。 所得到的结构可以在较低的飞行高度下操作以减少差动泵真空密封件上的负载。 该结构对于诸如离子注入的真空过程中的运动馈通特别有用。

    Apparatus for reducing distortion in fluid bearing surfaces
    6.
    发明授权
    Apparatus for reducing distortion in fluid bearing surfaces 有权
    减少流体轴承表面变形的装置

    公开(公告)号:US06323496B1

    公开(公告)日:2001-11-27

    申请号:US09293955

    申请日:1999-04-19

    IPC分类号: H01J37317

    摘要: A vacuum seal and fluid bearing apparatus for reducing the distortion of the bearing surfaces of a gas bearing is described. The apparatus includes a stator attached around an aperture in a vacuum housing and having a first planar fluid bearing surface. A movable member for closing the vacuum housing aperture having a second fluid bearing surface extending parallel to the first bearing surface is adapted to be supported spaced from the first bearing surface by a bearing fluid. A vacuum seal is provided between the movable member and the stator. In use, a force due to atmospheric pressure acts on the movable member in a direction normal to the bearing surfaces and a movable member includes a pressure relief structure to reduce any bending moment produced in the movable member by the force.

    摘要翻译: 描述了用于减小气体轴承的支承表面的变形的真空密封和流体轴承装置。 该装置包括定子,其围绕真空壳体中的孔附接并且具有第一平面流体支承表面。 用于关闭具有平行于第一支承表面延伸的第二流体支承表面的真空容纳孔的可移动构件适于通过轴承流体与第一支承表面间隔开。 在可动构件和定子之间设置真空密封件。 在使用中,由于大气压而产生的力在垂直于支承面的方向作用在可动件上,并且可移动部件包括压力释放结构,以减少由该力产生的可动件中产生的任何弯矩。

    Ion implantation apparatus and a method
    7.
    发明授权
    Ion implantation apparatus and a method 有权
    离子注入装置及方法

    公开(公告)号:US07989784B2

    公开(公告)日:2011-08-02

    申请号:US12494270

    申请日:2009-06-30

    IPC分类号: H01J37/317 H01J37/20

    摘要: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

    摘要翻译: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生,提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正,以补偿从轮轴的径向距离对晶片的一部分通过带状束的速度的依赖性。

    Ion implantation apparatus and a method for fluid cooling
    8.
    发明授权
    Ion implantation apparatus and a method for fluid cooling 有权
    离子注入装置和流体冷却方法

    公开(公告)号:US07982197B2

    公开(公告)日:2011-07-19

    申请号:US12494268

    申请日:2009-06-30

    IPC分类号: H01J37/317 H01J37/20

    摘要: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.

    摘要翻译: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 真空室中的冷却流体管道中的可分离连接可以包括串联密封件,其间具有中间室,其可以在真空室外排气,或独立地抽真空。 在一个实施例中,氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。

    ION IMPLANTATION APPARATUS AND A METHOD FOR FLUID COOLING
    9.
    发明申请
    ION IMPLANTATION APPARATUS AND A METHOD FOR FLUID COOLING 有权
    离子植入装置和流体冷却方法

    公开(公告)号:US20100327189A1

    公开(公告)日:2010-12-30

    申请号:US12494268

    申请日:2009-06-30

    摘要: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. Detachable connections in the cooling fluid conduits in the vacuum chamber may comprise tandem seals with an intermediate chamber between them which can be vented outside the vacuum chamber, or independently vacuum pumped. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.

    摘要翻译: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮,围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中,车轮的旋转轴线是固定的,并且车轮形成有支撑承载晶片支架的轮辋的张紧轮辐。 轮辐可以用于将冷却流体携带到晶片支撑件和从晶片支撑件传送冷却流体。 真空室中的冷却流体管道中的可分离连接可以包括串联密封件,其间具有中间室,其可以在真空室外排气,或独立地抽真空。 在一个实施例中,氢离子的带状光束被向下指向轮的外围边缘。 带状束在轮上的晶片的整个径向宽度上延伸。

    Wafer holder for simox processing
    10.
    发明授权
    Wafer holder for simox processing 失效
    晶圆支架用于simox处理

    公开(公告)号:US06423975B1

    公开(公告)日:2002-07-23

    申请号:US09376505

    申请日:1999-08-18

    IPC分类号: G21K510

    CPC分类号: H01L21/687

    摘要: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface. The pins can have a limited profile to minimize the amount of pin material proximate the wafer for reducing the likelihood of electrical arcing from the wafer to the pin.

    摘要翻译: 晶片保持器组件包括第一和第二主要结构构件,第一和第二晶片保持臂从该结构构件延伸。 第一臂通过石墨远端保持构件固定到主要结构构件。 第二臂通过石墨偏压构件枢转地偏置到晶片保持位置。 这种布置提供了从晶片到组件的导电路径,用于在离子注入过程期间抑制来自晶片的放电。 组件还可以包括附加的石墨保持构件,用于在与SIMOX晶片加工相关的极端条件下维持组件的结构完整性,而不需要潜在的晶片污染粘合剂和常规紧固件。 在臂的远端处的晶片接触销可以由硅形成。 硅引脚可以涂覆氮化钛以增强与晶片的电接触并提供耐磨表面。 引脚可以具有有限的轮廓以最小化靠近晶片的引脚材料的量,以减少从晶片到引脚的电弧的可能性。