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公开(公告)号：US4401775A
公开(公告)日：1983-08-30
申请号：US391923
申请日：1982-06-24
CPC分类号： H01B3/40 , C08G59/226 , C08G59/4207 , H01F27/027
摘要： Epoxy resin compositions are disclosed which have an exceptional capacity to penetrate tightly wound wire bundles such as tertiary coils in high voltage flyback transformers. The subject compositions are therefore useful for encapsulating such coils.
摘要翻译： 公开了环氧树脂组合物，其具有在高电压反激式变压器中穿透紧密卷绕的线束例如三级线圈的特殊能力。 因此，主题组合物可用于封装这种线圈。
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2.发明授权Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate 失效具有邻醌二叠氮基，酚醛清漆和丙二醇烷基醚乙酸酯的正性光致抗蚀剂组合物
公开(公告)号：US5143814A
公开(公告)日：1992-09-01
申请号：US772976
申请日：1991-10-08
申请人： Thomas R. Pampalone
发明人： Thomas R. Pampalone
CPC分类号： G03F7/0226 , G03F7/0048 , G03F7/168
摘要： The invention provides a method for producing a positive working photosensitive element with increased photospeed which comprises coating a formulation containing at least one novolak or polyvinyl phenol resin, at least one o-quinone diazide and a propylene glycol alkyl ether acetate on a substrate, drying, exposing to imaging energy and developing.
摘要翻译： 本发明提供一种用于生产具有增加的感光速度的正性感光元件的方法，该方法包括在基材上涂布含有至少一种酚醛清漆或聚乙烯基苯酚树脂，至少一种邻醌二叠氮化物和丙二醇烷基醚乙酸酯的制剂， 暴露于成像能量和发展。
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公开(公告)号：US4393160A
公开(公告)日：1983-07-12
申请号：US347107
申请日：1982-02-09
申请人： Thomas R. Pampalone
发明人： Thomas R. Pampalone
摘要： This invention relates to novel terpolymers of 3-methylcyclopentene, 2-cyclopentene-1-acetic acid and sulfur dioxide. Positive electron beam resist media prepared from the subject terpolymers possesses excellent sensitivity and development latitude and unexpectedly are developable with conventional aqueous alkaline developers.
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公开(公告)号：US4357369A
公开(公告)日：1982-11-02
申请号：US320016
申请日：1981-11-10
CPC分类号： H01L21/31138 , C23F4/00 , G03F7/0758 , Y10S438/949
摘要： A method of selectively removing a portion of a layer of material on a substrate by oxygen plasma etching utilizing a mask of a resist material comprising a poly(silane sulfone) copolymer.
摘要翻译： 使用包含聚（硅烷砜）共聚物的抗蚀剂材料的掩模的氧等离子体蚀刻来选择性地去除衬底上的材料层的一部分的方法。
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公开(公告)号：US4341861A
公开(公告)日：1982-07-27
申请号：US219517
申请日：1980-12-23
申请人： Thomas R. Pampalone
发明人： Thomas R. Pampalone
CPC分类号： G03F7/039
摘要： This invention relates to novel terpolymers of 3-methylcyclopentene, 2-cyclopentene-1-acetic acid and sulfur dioxide. Positive electron beam resist media prepared from the subject terpolymers possesses excellent sensitivity and development latitude and unexpectedly are developable with conventional aqueous alkaline developers.
摘要翻译： 本发明涉及3-甲基环戊烯，2-环戊烯-1-乙酸和二氧化硫的新型三元共聚物。 从受试三元共聚物制备的正电子束抗蚀剂介质具有优异的灵敏度和开发自由度，并且意想不到地用常规水性碱性显影剂显影。
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6.发明授权
公开(公告)号：US4405776A
公开(公告)日：1983-09-20
申请号：US396663
申请日：1982-07-09
摘要： This invention relates to novel terpolymers of 3-methylcyclopentene, an omega alkynoic acid and sulfur dioxide. Positive radiation sensitive films prepared from the subject terpolymers adhere well to the substrate, demonstrate resistance to cracking and erosion during development and possess excellent edge definition.
摘要翻译： 本发明涉及3-甲基环戊烯，ω-炔酸和二氧化硫的新型三元共聚物。 从主题三聚体制备的正性辐射敏感膜很好地粘附到基材上，在显影过程中表现出抗裂纹和侵蚀性，并且具有优异的边界定义。
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公开(公告)号：US4355094A
公开(公告)日：1982-10-19
申请号：US244104
申请日：1981-03-16
摘要： This invention relates to novel terpolymers of 3-methylcyclopentene, an omega alkynoic acid and sulfur dioxide. Positive radiation sensitive films prepared from the subject terpolymers adhere well to the substrate, demonstrate resistance to cracking and erosion during development and possess excellent edge definition.
摘要翻译： 本发明涉及3-甲基环戊烯，ω-炔酸和二氧化硫的新型三元共聚物。 从主题三聚体制备的正性辐射敏感膜很好地粘附到基材上，在显影过程中表现出抗裂纹和侵蚀性，并且具有优异的边界定义。
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8.发明授权Photolithography over reflective substrates comprising a titanium nitride layer 失效在包含氮化钛层的反射衬底上进行光刻
公开(公告)号：US4810619A
公开(公告)日：1989-03-07
申请号：US84464
申请日：1987-08-12
CPC分类号： G03F7/091
摘要： For fine line lithography of a reflective substrate, a layer of titanium nitride is applied between the reflective surface and the photoresist that is absorbant at the wavelength of light used to expose the photoresist. The resolution of the photoresist is improved, even when an absorbant dye is used in the photoresist. The titanium nitride can be readily removed at the same time as the reflective layer is patterned, thereby avoiding the need of a separate step to remove the absober layer during etching of the reflective substrate.
摘要翻译： 对于反射基板的细线光刻，将氮化钛层施加在反射表面和在用于曝光光致抗蚀剂的光的波长处的吸收剂的光致抗蚀剂之间。 光致抗蚀剂的分辨率提高，即使在光致抗蚀剂中使用吸收性染料也是如此。 在反射层被图案化的同时可以容易地去除氮化钛，从而避免在蚀刻反射基板期间需要单独的步骤去除绝缘层。
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公开(公告)号：US4621042A
公开(公告)日：1986-11-04
申请号：US766285
申请日：1985-08-16
CPC分类号： G03F7/094 , Y10S438/95
摘要： The use of o-cresol novolac resin for planarizing large topographic features on a semiconductor substrate is disclosed. In addition to being a superior planarizing material, o-cresol novolac resin oxidizes and darkens upon baking to provide excellent absorption capability for the light wavelengths which are conventionally utilized to irradiate photoresist compositions. O-cresol novolac resin additionally transmits light at higher wavelengths which are used to align pattern masks with alignment keys on a substrate. These properties further make a transparent substrate coated with a patterned layer of o-cresol novolac resin useful as a lithographic mask.
摘要翻译： 公开了使用邻甲酚酚醛清漆树脂来平坦化半导体衬底上的大形貌特征。 除了作为优异的平面化材料外，邻甲酚酚醛清漆树脂在烘烤时氧化和变暗，以为通常用于照射光致抗蚀剂组合物的光波长提供优异的吸收能力。 O-甲酚酚醛清漆树脂另外透射较高波长的光，这些光用于将图案掩模与基板上的对准键对准。 这些性质进一步制成涂覆有用作光刻掩模的邻甲酚酚醛清漆树脂的图案化层的透明基材。
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10.发明授权Positive resist for electron beam and x-ray lithography and method of using same 失效电子束和x射线光刻的正抗蚀剂及其使用方法
公开(公告)号：US4330671A
公开(公告)日：1982-05-18
申请号：US206716
申请日：1980-11-14
申请人： Thomas R. Pampalone
发明人： Thomas R. Pampalone
CPC分类号： G03F7/039 , C08G75/00 , C08G75/30 , Y10S430/168 , Y10T428/24835
摘要： Copolymers of an aziridine and sulfur dioxide are disclosed which are useful as positive radiation resists for use in electron beam and x-ray lithography.
摘要翻译： 公开了氮丙啶和二氧化硫的共聚物，其可用作用于电子束和x射线光刻的正辐射抗蚀剂。
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