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1.发明申请公开(公告)号：US20140191019A1
公开(公告)日：2014-07-10
申请号：US14240220
申请日：2012-12-13
申请人： Tianniu Chen , Michael B. Korzenski , Ping Jiang
发明人： Tianniu Chen , Michael B. Korzenski , Ping Jiang
CPC分类号： B23K1/018 , B09B3/00 , B09B5/00 , B23K3/08 , B23K37/00 , C22B1/005 , C22B3/02 , C22B3/04 , C22B4/00 , C22B7/006 , C22B11/046 , C25C1/00 , H05K3/22 , H05K2203/178 , Y02P10/234 , Y02P70/613 , Y02W30/82 , Y02W30/821 , Y02W30/822
摘要： Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.
摘要翻译： 可以收集用于回收印刷线路板的设备和方法，其中电子元件，贵金属和贱金属可以被收集用于再利用和再循环。 这些设备通常包括机械焊料去除模块和/或热模块，化学焊剂去除模块和贵金属浸出模块，其中模块被附接以使电子废物从模块连续通过模块。
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公开(公告)号：US20150050199A1
公开(公告)日：2015-02-19
申请号：US14389142
申请日：2013-04-05
申请人： Michael B. Korzenski , Tianniu Chen , Ping Jiang
发明人： Michael B. Korzenski , Tianniu Chen , Ping Jiang
IPC分类号： C22B3/00
CPC分类号： C22B13/045 , H01J9/52 , Y02P10/212 , Y02W30/60 , Y02W30/828
摘要： A leaching composition that substantially removes lead from solid materials and a method of using said composition. Preferably, the concentration of lead in the solid materials following processing is low enough that the solid materials can be reused and/or disposed of at minimal cost to the processor. Preferably, the solid materials comprise glass, such as cathode ray tube glass.
摘要翻译： 一种从固体材料中大量除去铅的浸出组合物和使用所述组合物的方法。 优选地，处理后的固体材料中的铅的浓度足够低，使得固体材料可以以最小的成本重新使用和/或处理。 优选地，固体材料包括玻璃，例如阴极射线管玻璃。
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公开(公告)号：US09074169B2
公开(公告)日：2015-07-07
申请号：US13146438
申请日：2010-01-26
申请人： Tianniu Chen , Steven Bilodeau , Karl E. Boggs , Ping Jiang , Michael B. Korzenski , George Mirth , Kim Y. Van Berkel
发明人： Tianniu Chen , Steven Bilodeau , Karl E. Boggs , Ping Jiang , Michael B. Korzenski , George Mirth , Kim Y. Van Berkel
CPC分类号： C11D11/0041 , C11D1/66 , C11D1/667 , C11D1/825 , C11D3/2072 , C11D3/2093 , C11D3/43 , C11D11/0047 , G03F7/70341 , G03F7/70925
摘要： Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.
摘要翻译： 使用所述组合物从表面去除聚合物材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。
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4.发明授权Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment 有权废旧电气电子设备回收过程中剥离焊锡金属的装置和方法公开(公告)号：US09221114B2
公开(公告)日：2015-12-29
申请号：US14240220
申请日：2012-12-13
申请人： Tianniu Chen , Michael B. Korzenski , Ping Jiang
发明人： Tianniu Chen , Michael B. Korzenski , Ping Jiang
CPC分类号： B23K1/018 , B09B3/00 , B09B5/00 , B23K3/08 , B23K37/00 , C22B1/005 , C22B3/02 , C22B3/04 , C22B4/00 , C22B7/006 , C22B11/046 , C25C1/00 , H05K3/22 , H05K2203/178 , Y02P10/234 , Y02P70/613 , Y02W30/82 , Y02W30/821 , Y02W30/822
摘要： Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.
摘要翻译： 可以收集用于回收印刷线路板的设备和方法，其中电子元件，贵金属和贱金属可以被收集用于再利用和再循环。 这些设备通常包括机械焊料去除模块和/或热模块，化学焊剂去除模块和贵金属浸出模块，其中模块被附接以使电子废物从模块连续通过模块。
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公开(公告)号：US20120015857A1
公开(公告)日：2012-01-19
申请号：US13146438
申请日：2010-01-26
申请人： Tianniu Chen , Steven Bilodeau , Karl E. Boggs , Ping Jiang , Michael B. Korzenski , George Mirth , Kim Y. Van Berkel
发明人： Tianniu Chen , Steven Bilodeau , Karl E. Boggs , Ping Jiang , Michael B. Korzenski , George Mirth , Kim Y. Van Berkel
CPC分类号： C11D11/0041 , C11D1/66 , C11D1/667 , C11D1/825 , C11D3/2072 , C11D3/2093 , C11D3/43 , C11D11/0047 , G03F7/70341 , G03F7/70925
摘要： Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.
摘要翻译： 使用所述组合物从表面去除聚合物材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。
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6.发明申请METHOD FOR PREVENTING THE COLLAPSE OF HIGH ASPECT RATIO STRUCTURES DURING DRYING 审中-公开用于防止干燥期间高比例结构褶皱的方法公开(公告)号：US20130280123A1
公开(公告)日：2013-10-24
申请号：US13819249
申请日：2011-08-26
申请人： Tianniu Chen , Steven Bilodeau , Chimin Sheu , Mutsumi Nakanishi , Masahiro Matsuoka , Fumio Nakayama , Peng Zhang , Michael B. Korzenski , Emanuel I. Cooper , Kate Veccharelli , Makonnen Payne
发明人： Tianniu Chen , Steven Bilodeau , Chimin Sheu , Mutsumi Nakanishi , Masahiro Matsuoka , Fumio Nakayama , Peng Zhang , Michael B. Korzenski , Emanuel I. Cooper , Kate Veccharelli , Makonnen Payne
IPC分类号： C09C3/08
CPC分类号： C09C3/08 , B81C1/00619 , B81C1/00928 , H01L21/02082 , H01L21/302 , H01L21/306
摘要： Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.
摘要翻译： 在干燥期间减少易碎的高纵横比结构所经受的毛细作用力的方法，以基本上防止在干燥过程中对所述高纵横比结构的损坏。 它们包括改变高纵横比结构的表面，使得力被充分地最小化，并且因此在其具有所述特征的结构的干燥期间，小于10％的高纵横比特征将具有弯曲或折叠。
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7.发明申请Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon 有权用于回收具有低K电介质材料的半导体晶片的组合物和方法公开(公告)号：US20080261847A1
公开(公告)日：2008-10-23
申请号：US12093290
申请日：2006-11-09
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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8.发明授权Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon 有权用于回收其上具有低k电介质材料的半导体晶片的组合物和方法公开(公告)号：US07960328B2
公开(公告)日：2011-06-14
申请号：US12093290
申请日：2006-11-09
IPC分类号： C11D7/32
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
摘要翻译： 一种去除组合物和用于从其上具有相同材料的废弃微电子器件结构去除低k电介质材料，蚀刻停止材料和/或金属堆叠材料的去除组合物和方法。 除去组合物包括氢氟酸。 该组合物至少部分地从其上具有相同的微电子器件结构的表面去除材料，用于所述结构的再循环和/或再利用，而不会损坏半导体结构中使用的下面的多晶硅或裸硅层 。
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9.发明申请METALS COMPATIBLE POST-ETCH PHOTORESIST REMOVER AND/OR SACRIFICIAL ANTIREFLECTIVE COATING ETCHANT 有权金属兼容后蚀刻光刻胶去除剂和/或杀真菌抗反射涂层公开(公告)号：US20090118153A1
公开(公告)日：2009-05-07
申请号：US12090213
申请日：2006-10-12
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
CPC分类号： C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
摘要： A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译： 一种液体去除组合物和用于从其上具有其的微电子器件去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种有机季碱和至少一种表面相互作用增强添加剂。 组合物在集成电路的制造中至少部分去除光致抗蚀剂和/或SARC材料，其中微电子器件（例如铜和钴）上的金属物质的蚀刻最小，并且不损坏微电子器件中使用的低k电介质材料 设备架构。
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公开(公告)号：US20110039747A1
公开(公告)日：2011-02-17
申请号：US12673860
申请日：2008-08-20
申请人： Renjie Zhou , Emanuel Cooper , Michael B. Korzenski , Ping Jiang
发明人： Renjie Zhou , Emanuel Cooper , Michael B. Korzenski , Ping Jiang
IPC分类号： G03F7/42
CPC分类号： G03F7/423 , H01L21/31133
摘要： A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
摘要翻译： 已经开发了用于从微电子器件去除体积和/或硬化的光致抗蚀剂材料的方法和含有无机酸的组合物。 含无机酸的组合物包括至少一种无机酸，至少一种含硫氧化剂和任选的至少一种含金属离子的催化剂。 含有无机酸的组合物有效地去除硬化的光致抗蚀剂材料，同时不损坏下面的含硅层。
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