摘要:
A load-applying device of a press-forming die includes a rod which includes a first end, a second end, and a flange, a lamination coned disc spring in which a plurality of coned disc springs having a center hole, to which the first end of the rod is inserted, are laminated, a first plate which includes a first through hole to which the first end of the rod is inserted and abuts the lamination coned disc spring, a second plate which includes a second through hole to which the second end of the rod is inserted and abuts the flange; and a gap fixing member which is detachably provided between the first plate and the second plate and fixes a gap between the first plate and the second plate so as to maintain the gap by which the lamination coned disc spring biases the flange to the second plate. The second end and the first plate relatively move in a mutually approaching direction during press-forming, and the lamination coned disc spring is compressed.
摘要:
The present invention has its object to provide an efficient, general use shaping technique for when forming high strength sheet metal into a three-dimensionally complicated shape.Further, the present invention provides a working apparatus for shaping sheet metal comprising a die (10) (also called a “punch”) which has a shape suitable for a shape of shaped sheet metal, a plurality of rolls (30 to 33) which grip sheet metal (H) with the die to shape the sheet metal, roll movement mechanisms (40) which makes the rolls independently move in a horizontal direction and make them independently ascend or descend in a vertical direction, and a roll angle setting mechanism which can change an angle by which the rolls are pressed against the die.
摘要:
According to an embodiment, a method for accessing a cell includes: a first access step of taking out a cartridge from the cell or inserting the cartridge into the cell in an initial stop position; and a second access step of taking out the cartridge from the cell or inserting the cartridge into the cell in one or more positions in the vicinity of the initial stop position until the taking-out or insertion operation succeeds in a case where the first access step has failed.
摘要:
An optical disc recording device controls a rotational rate of an optical disc and an optical disc recording device recording using a constant angular velocity method, thereby efficiently using the performance of the optical disc. A CPU reads management information (a maximum address value) for a farthest recording region, which is located at a circumference farthest from a center of the optical disc. A distance from the center of the optical disc to the farthest circumference of the recording region is calculated based on the read maximum address value. The rotational rate is calculated based on the calculated distance so that the recorded data rate of the farthest recording region is a maximum recorded data rate for the optical disc, and therefore is set to be used by a servo controller.
摘要:
A method of identification of a cause of occurrence of springback comprising a press forming analysis step of numerically analyzing forming conditions of press forming to obtain forming data of a press formed part, a processing step of processing at least one of a physical property value and physical property quantity data of part of the regions of said press formed part among forming data of said press formed part, and a springback value calculation step of calculating a springback value based on the results of said processing.
摘要:
A method of identification of a cause of occurrence of springback comprising a press forming analysis step of numerically analyzing forming conditions of press forming to obtain forming data of a press formed part, a processing step of processing at least one of a physical property value and physical property quantity data of part of the regions of said press formed part among forming data of said press formed part, and a springback value calculation step of calculating a springback value based on the results of said processing.
摘要:
An imaging apparatus is provided, which includes an image capturing unit, an adjusting unit and a display unit. The adjusting unit adjusts a clipped area for an image captured by the image capturing unit on photographing mode. The display unit displays a first number of pixels of the clipped area adjusted by the adjusting unit.
摘要:
According to an embodiment, a method for accessing a cell includes: a first access step of taking out a cartridge from the cell or inserting the cartridge into the cell in an initial stop position; and a second access step of taking out the cartridge from the cell or inserting the cartridge into the cell in one or more positions in the vicinity of the initial stop position until the taking-out or insertion operation succeeds in a case where the first access step has failed.
摘要:
There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and a large capacity while minimizing the mounting area. In order to achieve this memory, the TAB (Tape Automated Bonding) of the prior art is mounted on an electrically conductive connector, and a plurality of structures composed of the TAB and the connector are stacked. Moreover, the connector mounting the TAB thereon is constructed such that the independent terminals of the stacked TABs may not be shorted.
摘要:
A semiconductor region of a first conductivity type is formed in a column configuration on a semiconductor substrate, and acts as a source region (or a drain region) and a storage node electrode. A second semiconductor region of the first conductivity type is formed with a capacitor insulation film disposed between it and the side wall of the first semiconductor region and acts as a cell plate electrode. A third semiconductor region of a second conductivity type which is formed in an annular configuration is formed on the upper portion of the first semiconductor region and acts as a channel region. A first conductive layer is formed with a gate insulation film disposed between the first conductive layer and each of the inner and outer side walls of the third semiconductor region and acts as a transfer gate electrode. A fourth semiconductor region of the first conductivity type is formed in an area near the end portion of the opening of the third semiconductor region which is formed in the annular configuration and acts as a drain region (or a source region). A second conductive layer is formed in contact with the fourth semiconductor region and acts as a bit line.