公开(公告)号：US20170025256A1

公开(公告)日：2017-01-26

申请号：US15212400

申请日：2016-07-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryo SASAKI ,  Yusei KUWABARA

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32633 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32715 ,  H01J37/32834

Abstract: A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and foil ling an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.

Abstract translation: 一种等离子体处理装置，包括：室; 放置表; 排气路径，设置在所述放置台周围，以围绕所述放置台，并且构造成排出位于所述放置台上的所述半导体晶片上方的处理空间内的气体; 排气装置，其构造成通过排气路径排出处理空间内的气体; 挡板，具有多个通孔，设置在处理空间与排气路径之间，以围绕放置台; 以及整流板，设置在所述放置台周围，以在所述排气通路内围绕所述处理空间比所述挡板的位置围绕所述放置台，并且在所述排气路径内设置开口，以使所述排出路径内的流路的截面面积 排气路径在距离与排气装置连接的排气路径内的位置更远的位置处。

公开(公告)号：US20140116620A1

公开(公告)日：2014-05-01

申请号：US14058538

申请日：2013-10-21

Applicant: Tokyo Electron Limited

Inventor： Yusei KUWABARA ,  Nobuaki SHINDO ,  Sachie ISHIBASHI ,  Takahiko KATO ,  Noboru MAEDA

IPC: H01J37/04

CPC classification number: H01J37/32568 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32036 ,  H01J37/32091 ,  H01J37/32449

Abstract: A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.

Abstract translation: 一种等离子体处理装置，包括布置在处理室中并包括多个气体供应区的上部电极，包括多个分支部分的分支管，连接到至少一个分支部分的添加管和多个气体 将分支部分连接到供气区的管道。 上部电极经由气体供给区域向处理室供给包括主要气体的处理气体。 分支管根据预定的流量比将处理气体分开，并将分配的处理气体供应到气体供应区。 添加管添加调节气体。 连接到与添加管连接的分支部分的气体管道的气体流路包括用于根据调节气体 - 主要气体分子量比来防止气体浓度变化的弯曲部分。

公开(公告)号：US20210305022A1

公开(公告)日：2021-09-30

申请号：US17195728

申请日：2021-03-09

Applicant: Tokyo Electron Limited

Inventor： Hiroshi TSUJIMOTO ,  Yusei KUWABARA ,  Lifu LI

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.