公开(公告)号：US12051570B2

公开(公告)日：2024-07-30

申请号：US17320353

申请日：2021-05-14

Applicant: Tokyo Electron Limited

Inventor： Maju Tomura ,  Ryohei Takeda ,  Ryuichi Takashima ,  Yoshinobu Ooya

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32724 ,  H01J37/32935 ,  H01L21/31116 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

公开(公告)号：US09922806B2

公开(公告)日：2018-03-20

申请号：US15180273

申请日：2016-06-13

Applicant: Tokyo Electron Limited

Inventor： Maju Tomura ,  Ryohei Takeda ,  Ryuichi Takashima ,  Yoshinobu Ooya

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/31116

Abstract: An etching method is provided. In the etching method, a silicon oxide film is etched by using plasma in a first condition. In the first condition, a surface temperature of a substrate is controlled to have a temperature lower than −35 degrees C., and the plasma is generated from a hydrogen-containing gas and a fluorine-containing gas by using first radio frequency power output from a first radio frequency power source and second radio frequency power output from a second radio frequency power source. Next, the silicon oxide film is etched by using the plasma in a second condition. In the second condition, the output of the second radio frequency power from the second radio frequency power source is stopped. The silicon oxide film is etched by using the plasma alternately in the first condition and in the second condition multiple times.

公开(公告)号：US09997374B2

公开(公告)日：2018-06-12

申请号：US15375405

申请日：2016-12-12

Applicant: Tokyo Electron Limited

Inventor： Ryohei Takeda ,  Sho Tominaga ,  Yoshinobu Ooya

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/334

Abstract: An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is −35° C. or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply. The first process and the second process are repeated multiple times, and the first process is shorter in time than the second process.

公开(公告)号：US20150099366A1

公开(公告)日：2015-04-09

申请号：US14399360

申请日：2013-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryohei Takeda ,  Mitsuhiro Tomura ,  Akinori Kitamura ,  Shinji Higashitsutsumi ,  Hiroto Ohtake ,  Takashi Tsukamoto

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32192 ,  H01L21/02115 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069

Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.

Abstract translation: 提供了一种能够有利地形成蚀刻多层膜时使用的掩模的等离子体蚀刻方法。 用于蚀刻硼掺杂的无定形碳的等离子体蚀刻方法包括使用包含氯气和氧气的气体混合物的等离子体，并将安装级（3）的温度设定为100℃以上。

公开(公告)号：US10381237B2

公开(公告)日：2019-08-13

申请号：US15977043

申请日：2018-05-11

Applicant: Tokyo Electron Limited

Inventor： Ryohei Takeda ,  Sho Tominaga ,  Yoshinobu Ooya

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02

Abstract: An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is −35° C. or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply. The first process and the second process are repeated multiple times, and the first process is shorter in time than the second process.

公开(公告)号：US09659789B2

公开(公告)日：2017-05-23

申请号：US14977756

申请日：2015-12-22

Applicant: Tokyo Electron Limited

Inventor： Ryohei Takeda ,  Ryuichi Takashima ,  Yoshinobu Ooya

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/02 ,  H01L21/30 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/6831

Abstract: An etching method is provided. In the etching method, a temperature of a chiller configured to cool a pedestal is controlled so as to become −20 degrees C. or lower. Plasma is generated from a hydrogen-containing gas and a fluoride-containing gas supplied from a gas supply source by supplying first high frequency power having a first frequency supplied to the pedestal from a first high frequency power source. A silicon oxide film deposited on a substrate placed on the pedestal is etched by the generated plasma. Second high frequency power having a second frequency lower than the first frequency of the first high frequency power is supplied to the pedestal from a second high frequency power source in a static eliminating process after the step of etching the silicon oxide film.

公开(公告)号：US09570312B2

公开(公告)日：2017-02-14

申请号：US14399360

申请日：2013-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryohei Takeda ,  Mitsuhiro Tomura ,  Akinori Kitamura ,  Shinji Higashitsutsumi ,  Hiroto Ohtake ,  Takashi Tsukamoto

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32192 ,  H01L21/02115 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069

Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.

Abstract translation: 提供了一种能够有利地形成蚀刻多层膜时使用的掩模的等离子体蚀刻方法。 用于蚀刻硼掺杂的无定形碳的等离子体蚀刻方法包括使用包含氯气和氧气的气体混合物的等离子体，并将安装级（3）的温度设定为100℃以上。