公开(公告)号：US20140162463A1

公开(公告)日：2014-06-12

申请号：US14098648

申请日：2013-12-06

Applicant: Tokyo Electron Limited

Inventor： Ryuichi TAKASHIMA

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/3081

Abstract: A plasma etching method is provided for etching a semiconductor substrate with plasma using a metal mask that is patterned on the semiconductor substrate. The plasma etching method includes a first etching step of controlling a pressure within a chamber to a first pressure and etching the semiconductor substrate inside the chamber under the first pressure using a plasma generated from a fluorine-containing gas; and a second etching step to be performed after the first etching step, the second etching step including controlling the pressure within the chamber to a second pressure, which is higher than the first pressure, and etching the semiconductor substrate inside the chamber under the second pressure using the plasma generated from the fluorine-containing gas.

Abstract translation: 提供了一种等离子体蚀刻方法，用于使用在半导体衬底上图案化的金属掩模来蚀刻具有等离子体的半导体衬底。 等离子体蚀刻方法包括：第一蚀刻步骤，其将室内的压力控制为第一压力，并且使用由含氟气体产生的等离子体在第一压力下蚀刻室内的半导体衬底; 以及在第一蚀刻步骤之后执行的第二蚀刻步骤，所述第二蚀刻步骤包括将所述室内的压力控制为高于所述第一压力的第二压力，以及在所述第二压力下蚀刻所述室内的所述半导体衬底 使用由含氟气体产生的等离子体。

公开(公告)号：US20140011363A1

公开(公告)日：2014-01-09

申请号：US13925983

申请日：2013-06-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01L21/308

CPC classification number: H01L21/3088 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/1608

Abstract: A metal mask having an etching pattern having a very high verticality is formed, and an etching shape having a very high verticality is formed by etching a semiconductor with the metal mask as a mask.A resist film patterned with a reversal pattern obtained by reversing an etching pattern is formed on a semiconductor (resist film forming process, S100), a metal paste is filled in the reversal pattern of the resist film (metal paste filling process, S200), a metal mask having the etching pattern is formed by removing the resist film while baking the metal paste by a heating control (metal mask forming process, S300), and plasma etching is performed on the semiconductor by using the metal mask (etching process, S400).

Abstract translation: 形成具有非常高垂直度的蚀刻图案的金属掩模，并且通过用金属掩模作为掩模蚀刻半导体形成具有非常高垂直度的蚀刻形状。 在半导体（抗蚀剂膜形成处理，S100）上形成通过反转蚀刻图案而获得的反转图案图案化的抗蚀剂膜，在抗蚀剂膜的反转图案中填充金属膏（金属糊料填充处理，S200） 通过加热控制（金属掩模形成工艺，S300）对金属糊料进行烧结而除去抗蚀剂膜，形成具有蚀刻图案的金属掩模，并且通过使用金属掩模（蚀刻工艺S400）对半导体进行等离子体蚀刻 ）。

公开(公告)号：US20170178922A1

公开(公告)日：2017-06-22

申请号：US15378167

申请日：2016-12-14

Applicant: Tokyo Electron Limited

Inventor： Ryuichi TAKASHIMA ,  Taku GOHIRA ,  Yoshinobu OOYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32009 ,  H01J37/32165 ,  H01J2237/334 ,  H01L21/31144

Abstract: An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorine-containing gas includes a hydrofluorocarbon gas, and the sticking coefficient of radicals generated from the hydrofluorocarbon gas is higher than the sticking coefficient of radicals generated from carbon tetrafluoride (CF4).

公开(公告)号：US20160379856A1

公开(公告)日：2016-12-29

申请号：US15180273

申请日：2016-06-13

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/31116

Abstract: An etching method is provided. In the etching method, a silicon oxide film is etched by using plasma in a first condition. In the first condition, a surface temperature of a substrate is controlled to have a temperature lower than −35 degrees C., and the plasma is generated from a hydrogen-containing gas and a fluorine-containing gas by using first radio frequency power output from a first radio frequency power source and second radio frequency power output from a second radio frequency power source. Next, the silicon oxide film is etched by using the plasma in a second condition. In the second condition, the output of the second radio frequency power from the second radio frequency power source is stopped. The silicon oxide film is etched by using the plasma alternately in the first condition and in the second condition multiple times.

Abstract translation: 提供蚀刻方法。 在蚀刻方法中，通过在第一条件下使用等离子体来蚀刻氧化硅膜。 在第一条件下，将基板的表面温度控制在低于-35℃的温度，并且通过使用从含氢气体和含氟气体输出的第一射频功率从含氢气体和含氟气体产生等离子体 第一射频电源和从第二射频电源输出的第二射频功率。 接下来，在第二条件下通过使用等离子体来蚀刻氧化硅膜。 在第二条件下，停止来自第二射频电源的第二射频功率的输出。 在第一条件和第二条件下多次使用等离子体交替地刻蚀氧化硅膜。

公开(公告)号：US20210272780A1

公开(公告)日：2021-09-02

申请号：US17320353

申请日：2021-05-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

公开(公告)号：US20180174805A1

公开(公告)日：2018-06-21

申请号：US15896715

申请日：2018-02-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/31116

Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

公开(公告)号：US20160189975A1

公开(公告)日：2016-06-30

申请号：US14977756

申请日：2015-12-22

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/30 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/6831

Abstract: An etching method is provided. In the etching method, a temperature of a chiller configured to cool a pedestal is controlled so as to become −20 degrees C. or lower. Plasma is generated from a hydrogen-containing gas and a fluoride-containing gas supplied from a gas supply source by supplying first high frequency power having a first frequency supplied to the pedestal from a first high frequency power source. A silicon oxide film deposited on a substrate placed on the pedestal is etched by the generated plasma. Second high frequency power having a second frequency lower than the first frequency of the first high frequency power is supplied to the pedestal from a second high frequency power source in a static eliminating process after the step of etching the silicon oxide film.

Abstract translation: 提供蚀刻方法。 在蚀刻方法中，被配置为冷却台座的冷却器的温度被控制为-20℃或更低。 通过从第一高频电源提供具有提供给基座的第一频率的第一高频功率，从气体供应源供应的含氢气体和含氟化物气体产生等离子体。 通过产生的等离子体蚀刻沉积在放置在基座上的基板上的氧化硅膜。 在蚀刻氧化硅膜的步骤之后的静电消除处理中，从第二高频电源将具有低于第一高频功率的第一频率的第二频率的第二高频功率提供给基座。