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公开(公告)号：US20210246547A1
公开(公告)日：2021-08-12
申请号：US17166657
申请日：2021-02-03
发明人： Shuji AZUMO , Shinichi IKE , Yumiko KAWANO
IPC分类号： C23C16/04 , H01L21/02 , C23C16/40 , H01L21/8238 , C23C16/01 , C23C16/02 , C23C16/455
摘要： A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.
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公开(公告)号：US20230369041A1
公开(公告)日：2023-11-16
申请号：US18245550
申请日：2021-09-06
发明人： Zeyuan NI , Yumiko KAWANO , Shuji AZUMO , Taiki KATO , Shinichi IKE
IPC分类号： H01L21/02
CPC分类号： H01L21/0214 , H01L21/02499 , H01L21/02164
摘要： A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supplying an organic compound containing a nitro group, which is a raw material of the self-assembled monolayer, in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and (C) forming a second insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.
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公开(公告)号：US20230009551A1
公开(公告)日：2023-01-12
申请号：US17757376
申请日：2020-12-14
发明人： Yumiko KAWANO , Shinichi IKE , Shuji AZUMO
摘要： A film formation method includes: preparing a substrate including, on its surface, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; selectively forming a self-assembled monolayer in the first region, among the first region and the second region; and forming a desired target film in the second region, among the first region and the second region, by using the self-assembled monolayer formed in the first region, wherein the selectively forming the self-assembled monolayer includes: selectively forming the self-assembled monolayer in the first region by using a first processing liquid including a first raw material of the self-assembled monolayer; and modifying the self-assembled monolayer, by using a second processing liquid including a second raw material of the self-assembled monolayer at a concentration different from a concentration of the first processing liquid.
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公开(公告)号：US20220181144A1
公开(公告)日：2022-06-09
申请号：US17598175
申请日：2020-03-12
发明人： Yumiko KAWANO , Shuji AZUMO , Shinichi IKE
IPC分类号： H01L21/02 , C23C16/455
摘要： There is provided a film formation method. The method comprises: preparing a substrate having a first region on which an oxide formed by oxidization of a surface of a conductive material is exposed and a second region on which an insulating material is exposed; replacing a film of the oxide with a film of boron oxide by supplying a boron halide gas to the substrate; etching the boron oxide film in the first region and forming a self-assembled monolayer film in the second region by supplying a gas of a fluorine-containing silane compound to the substrate; and forming a conductive target film selectively in the first region, from the first region and the second region, using the self-assembled monolayer film formed in the second region, the first region having the conductive material exposed thereon.
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公开(公告)号：US20200294798A1
公开(公告)日：2020-09-17
申请号：US16815672
申请日：2020-03-11
发明人： Yuichiro WAGATSUMA , Toyohiro KAMADA , Shinichi IKE , Shuji AZUMO
摘要： There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.
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公开(公告)号：US20240150895A1
公开(公告)日：2024-05-09
申请号：US18280539
申请日：2022-02-24
发明人： Shuji AZUMO , Shinichi IKE , Yumiko KAWANO , Hiroki MURAKAMI
IPC分类号： C23C16/455 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/52
CPC分类号： C23C16/45529 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/4554 , C23C16/45553 , C23C16/52
摘要： A film forming method includes: a preparation process of preparing a substrate having a surface from which a first film without containing silicon and a second film are exposed; a first film formation process of forming a self-assembled monolayer, which has a fluorine-containing functional group and inhibits formation of a third film containing silicon, on the first film; a second film formation process of forming the third film on the second film; a modification process of decomposing the self-assembled monolayer by plasma using a gas containing hydrogen and nitrogen while maintaining a temperature of the substrate to be 70 degrees C. or lower, so that a side portion of the third film, which is formed in a vicinity of the self-assembled monolayer, is modified into ammonium fluorosilicate by active species contained in the decomposed self-assembled monolayer; and a removal process of removing the ammonium fluorosilicate.
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公开(公告)号：US20230148162A1
公开(公告)日：2023-05-11
申请号：US17762230
申请日：2020-09-16
发明人： Shuji AZUMO , Masahito SUGIURA , Takashi MATSUMOTO , Yumiko KAWANO , Shinichi IKE , Kenji OUCHI
IPC分类号： H01L21/027 , C23C16/04 , C23C16/06 , C23C16/30 , B82Y30/00
CPC分类号： H01L21/0271 , C23C16/042 , C23C16/06 , C23C16/30 , B82Y30/00
摘要： The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.
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公开(公告)号：US20220336205A1
公开(公告)日：2022-10-20
申请号：US17753490
申请日：2020-08-24
发明人： Kenji OUCHI , Shuji AZUMO , Yumiko KAWANO , Shinichi IKE
IPC分类号： H01L21/02 , C23C16/455 , C23C16/56 , C23C16/40 , C23C16/06
摘要： A film formation method for selectively forming a film on a substrate includes: a preparation step of preparing a substrate having a surface on which a first film and a second film are exposed; a first film forming step of supplying a compound for forming a self-assembled monolayer onto the substrate to form the self-assembled monolayer on the first film, the compound having a functional group including fluorine and carbon and suppressing formation of a third film; a second film forming step of forming the third film on the second film; and a first removal step of removing the third film formed in a vicinity of the self-assembled monolayer by irradiating the surface of the substrate with ions or active species, wherein the third film is a film which forms a volatile compound more easily than the first film by being bonded to fluorine and carbon in the self-assembled monolayer.
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公开(公告)号：US20210087691A1
公开(公告)日：2021-03-25
申请号：US17028230
申请日：2020-09-22
发明人： Shuji AZUMO , Shinichi IKE , Yumiko KAWANO
摘要： A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.
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公开(公告)号：US20240263306A1
公开(公告)日：2024-08-08
申请号：US18565703
申请日：2022-05-25
发明人： Shuji AZUMO , Sena FUJITA , Tadashi MITSUNARI , Yumiko KAWANO , Shinichi IKE
IPC分类号： C23C16/455 , C23C16/04 , C23C16/458 , C23C16/54 , C23C16/56
CPC分类号： C23C16/45527 , C23C16/045 , C23C16/45563 , C23C16/4583 , C23C16/54 , C23C16/56
摘要： A film forming method includes: (A) preparing a substrate with a surface having a first region where a first film is exposed, and a second region where a second film formed by a material different from the first film is exposed; (B) forming a stepped portion in the surface such that the first region becomes higher than the second region; (C) supplying a liquid to the surface where the stepped portion is formed; and (D) supplying, to the surface, a processing gas that chemically changes the liquid, and moving the liquid from the second region to the first region by a reaction between the processing gas and the liquid to selectively form a film in the first region with respect to the second region.
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