公开(公告)号：US20210358772A1

公开(公告)日：2021-11-18

申请号：US17319514

申请日：2021-05-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshiki IGARASHI ,  Satoru KIKUSHIMA ,  Takayuki SUGA ,  Jun LIN ,  Chengya CHU

IPC: H01L21/67

Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.

公开(公告)号：US20150332932A1

公开(公告)日：2015-11-19

申请号：US14709534

申请日：2015-05-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shin HIROTSU ,  Yoshiki IGARASHI ,  Tomonori MIWA ,  Hiroshi OKADA

IPC: H01L21/311

CPC classification number: H01L21/311 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11556 ,  H01L27/11582

Abstract: Disclosed is an etching method for etching an etching target layer. The etching method includes: a first step of depositing a plasma reaction product on a mask layer made of an organic film formed on the etching target layer; and after the first step, a second step of etching the etching target layer. The mask layer includes a coarse region in which a plurality of openings are formed, and a dense region surrounding the coarse region. The mask layer exists more densely in the dense region than in the coarse region. The coarse region includes a first region and a second region positioned close to the dense region compared to the first region. In the second step of the etching method, a width of the openings in the first region becomes narrower than a width of the openings in the second region.

Abstract translation: 公开了蚀刻蚀刻目标层的蚀刻方法。 蚀刻方法包括：在由蚀刻目标层上形成的有机膜制成的掩模层上沉积等离子体反应产物的第一步骤; 在第一步骤之后，蚀刻蚀刻目标层的第二步骤。 掩模层包括其中形成有多个开口的粗糙区域和围绕粗糙区域的致密区域。 在密集区域中，掩模层比粗区域更密集地存在。 粗区域包括与第一区域相比位于靠近致密区域的第一区域和第二区域。 在蚀刻方法的第二步骤中，第一区域中的开口的宽度变得比第二区域中的开口的宽度窄。

公开(公告)号：US20230395400A1

公开(公告)日：2023-12-07

申请号：US18451826

申请日：2023-08-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshiki IGARASHI ,  Satoru KIKUSHIMA ,  Takayuki SUGA ,  Jun LIN ,  Chengya CHU

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  H01L21/31116

Abstract: An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.

公开(公告)号：US20170162399A1

公开(公告)日：2017-06-08

申请号：US15361675

申请日：2016-11-28

Applicant: Tokyo Electron Limited

Inventor： Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yoshiki IGARASHI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L27/11556 ,  H01L27/11582 ,  H01L28/00

Abstract: There is provided a plasma etching method. The plasma etching method includes generating plasma, by using a first high frequency power output from a first high frequency power supply, from a first processing gas that contains fluorine-containing gas, thereby etching a laminated film of a silicon oxide film and a silicon nitride film through the generated plasma, and generating plasma, by using the first high frequency power, from a second processing gas that contains bromine-containing gas, thereby etching the laminated film through the generated plasma.

公开(公告)号：US20130213572A1

公开(公告)日：2013-08-22

申请号：US13848360

申请日：2013-03-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masanobu HONDA ,  Manabu SATO ,  Yoshiki IGARASHI

IPC: H01L21/467

CPC classification number: H01L21/467 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/31116

Abstract: A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.

Abstract translation: 用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源， 设置成面对第一电极的电极。 该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二 电极。 通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。

公开(公告)号：US20180226264A1

公开(公告)日：2018-08-09

申请号：US15949185

申请日：2018-04-10

Applicant: Tokyo Electron Limited

Inventor： Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yoshiki IGARASHI

IPC: H01L21/311 ,  H01L27/11582 ,  H01L27/11556

Abstract: A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.

公开(公告)号：US20160314986A1

公开(公告)日：2016-10-27

申请号：US15131221

申请日：2016-04-18

Applicant: Tokyo Electron Limited

Inventor： Sho TOMINAGA ,  Wataru TAKAYAMA ,  Yoshiki IGARASHI

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes generating a plasma from a hydrogen-containing gas and a fluorine-containing gas with high-frequency electric power for plasma generation. A first film including a silicon oxide film and a silicon nitride film is etched with the generated plasma in an environment at a temperature lower than or equal to −30° C. The first etch rate of first etching that etches the first film and the second etch rate of second etching that etches a second film having a structure different from the structure of the first film are controlled, so that the difference between the first etch rate and the second etch rate is within ±20% of the first etch rate.

Abstract translation: 蚀刻方法包括从具有用于等离子体产生的高频电力的含氢气体和含氟气体产生等离子体。 在低于或等于-30℃的环境中，用产生的等离子体蚀刻包括氧化硅膜和氮化硅膜的第一膜。蚀刻第一膜和第二膜的第一蚀刻的第一蚀刻速率 控制蚀刻具有与第一膜的结构不同的结构的第二膜的第二蚀刻的蚀刻速率，使得第一蚀刻速率和第二蚀刻速率之间的差在第一蚀刻速率的±20％以内。

公开(公告)号：US20150371830A1

公开(公告)日：2015-12-24

申请号：US14730394

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira TAKAHASHI ,  Kei NAKAYAMA ,  Yoshiki IGARASHI ,  Shin HIROTSU

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/76802

Abstract: Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON.

Abstract translation: 公开了一种用于蚀刻加工对象物体的绝缘膜的方法。 该方法包括：在第一项中，周期性地切换高频功率的ON和OFF，以激发含有碳氟化合物的处理气体，并将其供应到等离子体处理装置的处理容器中; 并且在第一项之后的第二项中，将高频功率设定为连续接通，以激励供给到处理容器中的处理气体。 在由高频接通的术语和第一项中高频功率关闭的术语组成的一个周期中，第二项长于高频功率导通的术语。