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    ELECTRODE MANUFACTURING APPARATUS FOR LITHIUM ION CAPACITOR AND ELECTRODE MANUFACTURING METHOD THEREFOR
    1.
    发明申请
    ELECTRODE MANUFACTURING APPARATUS FOR LITHIUM ION CAPACITOR AND ELECTRODE MANUFACTURING METHOD THEREFOR 有权
    用于锂离子电容器的电极制造装置及其电极制造方法

    公开(公告)号：US20140178594A1

    公开(公告)日：2014-06-26

    申请号：US14132403

    申请日：2013-12-18

    Applicant: Tokyo Electron Limited

    Inventor： Yoshiyuki Kobayashi ,  Satoshi Taga

    IPC: C23C4/12 ,  C23C4/08

    CPC classification number: C23C4/08 ,  C23C4/12 ,  C23C4/137 ,  H01G11/06 ,  H01G11/32 ,  H01G11/50 ,  H01G11/86 ,  H01M4/0419 ,  H01M4/139 ,  H01M4/587 ,  H01M10/0525 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54

    Abstract: A time for doping an electrode material on an electrode sheet with a lithium ion can be reduced. The electrode manufacturing apparatus includes a processing chamber 200 to and from which the electrode sheet is loaded and unloaded; a rare gas supply unit 230 configured to introduce a rare gas into the processing chamber; an exhaust device 220 configured to exhaust an inside of the processing chamber to a certain vacuum level; and a lithium thermal spraying unit 210 configured to dope a carbon material C with the lithium ion by forming a lithium thin film on the carbon material of the electrode sheet W loaded into the processing chamber while melting and spraying lithium-containing powder.

    Abstract translation: 可以减少在具有锂离子的电极片上掺杂电极材料的时间。 电极制造装置包括加载和卸载电极片的处理室200; 稀有气体供给单元230，被配置为向所述处理室内引入稀有气体; 排气装置220，其构造成将处理室的内部排出到一定的真空度; 以及锂热喷涂单元210，其被配置为通过在装载到处理室中的电极片W的碳材料上形成锂薄膜，同时熔融和喷射含锂粉末而将碳材料C与锂离子掺杂。

    Substrate processing apparatus and susceptor
    2.
    发明授权
    Substrate processing apparatus and susceptor 有权

    公开(公告)号：US10557190B2

    公开(公告)日：2020-02-11

    申请号：US14163115

    申请日：2014-01-24

    Applicant: Tokyo Electron Limited

    Inventor： Satoshi Taga ,  Yoshiyuki Kobayashi

    IPC: H01L21/683 ,  C23C4/08 ,  C23C16/458 ,  H01L21/687

    Abstract: A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.

    PLASMA SPRAYING APPARATUS AND SPRAYING CONTROL METHOD
    3.
    发明申请
    PLASMA SPRAYING APPARATUS AND SPRAYING CONTROL METHOD 审中-公开

    公开(公告)号：US20190256962A1

    公开(公告)日：2019-08-22

    申请号：US16348577

    申请日：2017-10-27

    Applicant: Tokyo Electron Limited

    Inventor： Yoshiyuki Kobayashi ,  Shinji Himori ,  Naokazu Furuya

    IPC: C23C4/134 ,  H05H1/40 ,  H05H1/42

    Abstract: A plasma spraying apparatus includes a supplier configured to carry powder of a spray material by a plasma generation gas and jet the powder of the spray material and the plasma generation gas from an opening at a leading end thereof; a plasma generator configured to form, by using the jetted plasma generation gas, a plasma having an axis center shared by the supplier; a magnetic field generator configured to generate a magnetic field in a space where the plasma is formed; and a controller configured to control the magnetic field generator to control a deflection of the plasma.

    Plasma spraying device and method for manufacturing battery electrode
    4.
    发明授权
    Plasma spraying device and method for manufacturing battery electrode 有权

    公开(公告)号：US11225708B2

    公开(公告)日：2022-01-18

    申请号：US16467281

    申请日：2017-12-07

    Applicant: Tokyo Electron Limited

    Inventor： Yoshiyuki Kobayashi ,  Naoki Yoshii ,  Katsuji Kadosawa ,  Kimitomo Kaji

    IPC: H01M4/04 ,  C23C4/134 ,  C23C4/08 ,  H01G11/86 ,  H01M4/1395 ,  H05H1/34 ,  H05H1/42

    Abstract: There is provision of a plasma spraying device including a supplying section configured to convey feedstock powder with a plasma generating gas, and to inject the feedstock powder and the plasma generating gas from an opening of a tip; a plasma generating section configured to generate a plasma by decomposing the injected plasma generating gas using electric power of 500 W to 10 kW; and a chamber causing the supplying section and the plasma generating section to be an enclosed region, which is configured to deposit the feedstock powder on a workpiece by melting the feedstock powder by the plasma generated in the enclosed region. The feedstock powder is any one of lithium (Li), aluminum (Al), copper (Cu), silver (Ag), and gold (Au). A particle diameter of the feedstock powder is between 1 μm and 50 μm.

    Semiconductor manufacturing device and processing method
    5.
    发明授权
    Semiconductor manufacturing device and processing method 有权

    公开(公告)号：US10699935B2

    公开(公告)日：2020-06-30

    申请号：US15850875

    申请日：2017-12-21

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Shinji Himori ,  Yoshiyuki Kobayashi ,  Takehiro Kato ,  Etsuji Ito

    IPC: H01L21/687 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/306

    Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

    Plasma processing apparatus
    6.
    发明授权
    Plasma processing apparatus 有权

    公开(公告)号：US10128089B2

    公开(公告)日：2018-11-13

    申请号：US14884949

    申请日：2015-10-16

    Applicant: Tokyo Electron Limited

    Inventor： Yoshiyuki Kobayashi ,  Jun Watanabe ,  Takuya Okada ,  Tomoyuki Nara

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/48 ,  C23C16/50

    Abstract: There is provided a plasma processing apparatus including a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The plasma processing apparatus comprises: a chamber for performing a plasma process on a target object; a mounting table configured to mount thereon the target object; and a focus ring configured to surround the target object, the focus ring being in contact with the mounting table via a flexible heat transfer sheet. Further, the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface, and the anti-adhesion layer is located between said contact surface of the heat transfer sheet and a mounting surface of the mounting table. Furthermore, the anti-adhesion layer contains heat conductive particulates, and the heat transfer sheet is formed in an annular shape.

    SUPPORT MECHANISM AND SUBSTRATE PROCESSING APPARATUS
    10.
    发明申请
    SUPPORT MECHANISM AND SUBSTRATE PROCESSING APPARATUS 有权
    支撑机构和基板加工设备

    公开(公告)号：US20150211796A1

    公开(公告)日：2015-07-30

    申请号：US14604866

    申请日：2015-01-26

    Applicant: Tokyo Electron Limited

    Inventor： Hiroshi Kikuchi ,  Yoshiyuki Kobayashi

    IPC: F27D1/18

    CPC classification number: F27D1/1808 ,  F27B17/0025

    Abstract: The present disclosure provides a support mechanism for supporting a cover that performs sealing of a furnace opening of a heat treatment furnace or release the sealing by being moved up or down by an elevating unit. The support mechanism includes a first elastic body having a first elastic modulus; and a second elastic body having a second elastic modulus larger than the first elastic modulus. A reaction force in relation to the first elastic body is applied to the cover when the cover abuts on the furnace opening by being moved up by the elevating unit, and a reaction force in relation to the first elastic body and the second elastic body is applied to the cover after the cover abuts on the furnace opening by being moved up by the elevating unit.

    Abstract translation: 本公开提供了一种用于支撑执行热处理炉的炉口的密封的盖的支撑机构，或者通过升降单元向上或向下移动来释放密封。 支撑机构包括具有第一弹性模量的第一弹性体; 以及具有大于第一弹性模量的第二弹性模量的第二弹性体。 当盖子被升降单元向上移动时，当盖子靠近炉子开口时，相对于第一弹性体的反作用力被施加到盖上，并施加相对于第一弹性体和第二弹性体的反作用力 在盖子通过升降单元向上移动之后抵靠在炉子开口上的盖子。

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