公开(公告)号：US11145490B2

公开(公告)日：2021-10-12

申请号：US16719325

申请日：2019-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro Yokota ,  Takanori Banse ,  Joji Takayoshi ,  Shinya Morikita ,  Naohiko Okunishi

IPC: H01L21/00 ,  H01J37/32 ,  H05H1/46 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

公开(公告)号：US10825662B2

公开(公告)日：2020-11-03

申请号：US16411559

申请日：2019-05-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rumiko Moriya ,  Takanori Banse ,  Suguru Sato ,  Yuuji Akiduki ,  Takehiro Tanikawa

IPC: H01J37/32 ,  H01L21/687 ,  G01S17/08 ,  H01J37/22 ,  H01L21/67 ,  G01S17/06 ,  H01L21/683

Abstract: There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

公开(公告)号：US11721522B2

公开(公告)日：2023-08-08

申请号：US17835521

申请日：2022-06-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kosuke Ogasawara ,  Kentaro Yamaguchi ,  Takanori Banse

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01J37/32091 ,  H01J37/32422 ,  H01J37/32449 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01J2237/334

Abstract: A capacitively coupled plasma processing apparatus includes a chamber; a gas supply that supplies an inert gas into the chamber; a substrate support including a lower electrode; an upper electrode provided above the substrate support and including silicon; a first radio-frequency power supply electrically connected to the upper electrode; a second radio-frequency power supply electrically connected to the lower electrode; a bias power supply that applies a negative bias voltage to the upper electrode; and a controller that controls an overall operation of the capacitively coupled plasma processing apparatus such that the silicon-containing material is deposited on sidewalls of a mask of the substrate to narrow an opening formed on the mask by an amount greater in a second direction than in a first direction.

公开(公告)号：US10770268B2

公开(公告)日：2020-09-08

申请号：US15865841

申请日：2018-01-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya Morikita ,  Takanori Banse ,  Takahisa Iwasaki ,  Ryosuke Niitsuma ,  Hiroki Taoka

IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00 ,  C23C16/455 ,  C23C16/26 ,  C23C16/505 ,  C23C16/40 ,  H01L21/67

Abstract: In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. The silicon-containing film is removed from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber, and the carbon-containing film is removed from the surfaces of the components by using a plasma of an oxygen-containing gas.

公开(公告)号：US09818582B2

公开(公告)日：2017-11-14

申请号：US15180672

申请日：2016-06-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiraku Murakami ,  Nobutaka Sasaki ,  Shigeru Senzaki ,  Takanori Banse ,  Hiroshi Tsujimoto ,  Keigo Toyoda

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32477 ,  H01J37/32504

Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.

公开(公告)号：US11367590B2

公开(公告)日：2022-06-21

申请号：US16975462

申请日：2019-07-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kosuke Ogasawara ,  Kentaro Yamaguchi ,  Takanori Banse

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/32

Abstract: A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.

公开(公告)号：US10707088B2

公开(公告)日：2020-07-07

申请号：US15673621

申请日：2017-08-10

Applicant: Tokyo Electron Limited

Inventor： Shinya Morikita ,  Takanori Banse ,  Yuta Seya ,  Ryosuke Niitsuma

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

Abstract: A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, and the second layer is provided on the etching target layer. The method includes generating plasma of a first gas within a processing vessel of a plasma processing apparatus in which the target object is accommodated; etching the first layer with the plasma of the first gas and the mask until the second layer is exposed; and conformally forming a protection film on a side surface of the first layer; and generating plasma of a second gas and removing the mask with the plasma of the second gas.

公开(公告)号：US10692726B2

公开(公告)日：2020-06-23

申请号：US16315812

申请日：2017-07-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya Morikita ,  Takanori Banse ,  Yuta Seya ,  Ryosuke Niitsuma

IPC: H01L21/3065 ,  H05H1/46 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

Abstract: A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.

公开(公告)号：US10546723B2

公开(公告)日：2020-01-28

申请号：US16141225

申请日：2018-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro Yokota ,  Takanori Banse ,  Joji Takayoshi ,  Shinya Morikita ,  Naohiko Okunishi

IPC: H01L21/311 ,  H01J37/32 ,  H05H1/46 ,  H01L21/02 ,  H01L21/3105

Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

公开(公告)号：US20180047578A1

公开(公告)日：2018-02-15

申请号：US15673621

申请日：2017-08-10

Applicant: Tokyo Electron Limited

Inventor： Shinya Morikita ,  Takanori Banse ,  Yuta Seya ,  Ryosuke Niitsuma

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/027 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32165 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first layer, the first layer is provided on the second layer, and the second layer is provided on the etching target layer. The method includes generating plasma of a first gas within a processing vessel of a plasma processing apparatus in which the target object is accommodated; etching the first layer with the plasma of the first gas and the mask until the second layer is exposed; and conformally forming a protection film on a side surface of the first layer; and generating plasma of a second gas and removing the mask with the plasma of the second gas.