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    Data conditioning to improve flash memory reliability
    5.
    发明授权
    Data conditioning to improve flash memory reliability 有权
    数据调理提高闪存的可靠性

    公开(公告)号：US08762629B2

    公开(公告)日：2014-06-24

    申请号：US13616486

    申请日：2012-09-14

    申请人： William H. Radke ,  Vishal Sarin ,  Jung-Sheng Hoei

    发明人： William H. Radke ,  Vishal Sarin ,  Jung-Sheng Hoei

    IPC分类号： G06F13/00 ,  G06F13/28

    CPC分类号： G06F11/1072 ,  G06F12/0246 ,  G06F2212/7205 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C29/52 ,  G11C2211/5641

    摘要： Methods and apparatus for managing data storage in memory devices utilizing memory arrays of varying density memory cells. Data can be initially stored in lower density memory. Data can be further read, compacted, conditioned and written to higher density memory as background operations. Methods of data conditioning to improve data reliability during storage to higher density memory and methods for managing data across multiple memory arrays are also disclosed.

    摘要翻译： 用于利用不同密度存储单元的存储器阵列来管理存储器件中的数据存储的方法和装置。 数据最初可以存储在较低密度的存储器中。 可以将数据进一步读取，压缩，调节并写入高密度存储器作为后台操作。 还公开了用于在存储到更高密度存储器期间提高数据可靠性的数据调节方法以及用于跨多个存储器阵列管理数据的方法。

    Methods of data handling
    8.
    发明授权
    Methods of data handling 有权
    数据处理方法

    公开(公告)号：US08510634B2

    公开(公告)日：2013-08-13

    申请号：US13371683

    申请日：2012-02-13

    申请人： Brady L. Keays ,  Shuba Swaminathan ,  William H. Radke

    发明人： Brady L. Keays ,  Shuba Swaminathan ,  William H. Radke

    IPC分类号： G11C29/00

    CPC分类号： G06F11/10 ,  G06F11/1048 ,  H03M13/132 ,  H03M13/1515

    摘要： Methods include receiving data and an ECC code read from a memory array, generating an ECC code from the received data, and determining whether the received data is corrupted by evaluating the generated ECC code against the ECC code read from the memory array. If the received data is determined to be corrupted, a correction algorithm and a recorded likely state of a known bad/questionable bit of the received data may be used to correct error in the received data. Alternatively, if the received data is determined to be corrupted, the correction algorithm and a recorded location of a known bad/questionable bit of the received data may be used to correct error in the received data.

    摘要翻译： 方法包括从存储器阵列接收数据和从其读取的ECC代码，从接收到的数据生成ECC代码，并且通过根据从存储器阵列读取的ECC代码评估所生成的ECC代码来确定接收的数据是否被破坏。 如果接收到的数据被确定为被破坏，则可以使用接收到的数据的已知的坏/可疑比特的校正算法和记录的可能状态来校正接收到的数据中的错误。 或者，如果接收到的数据被确定为已被破坏，则可以使用校正算法和接收到的数据的已知坏/可疑位的记录位置来校正接收到的数据中的错误。

    Error recovery storage along a memory string
    9.
    发明授权
    Error recovery storage along a memory string 有权

    公开(公告)号：US08468415B2

    公开(公告)日：2013-06-18

    申请号：US13570180

    申请日：2012-08-08

    申请人： William H. Radke

    发明人： William H. Radke

    IPC分类号： G11C29/00

    CPC分类号： G06F11/1008 ,  G06F11/1072 ,  H03M13/256 ,  H03M13/2909

    摘要： Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes.

    MEMORY CELL COUPLING COMPENSATION
    10.
    发明申请
    MEMORY CELL COUPLING COMPENSATION 有权
    记忆体耦合补偿

    公开(公告)号：US20130051143A1

    公开(公告)日：2013-02-28

    申请号：US13215348

    申请日：2011-08-23

    申请人： Zhenlei Shen ,  William H. Radke ,  Peter Feeley

    发明人： Zhenlei Shen ,  William H. Radke ,  Peter Feeley

    IPC分类号： G11C16/06 ,  G11C16/04

    CPC分类号： G06F11/1068 ,  G06F11/1004 ,  G06F11/1048 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3418 ,  G11C29/04 ,  G11C29/52

    摘要： Methods for memory cell coupling compensation and apparatuses configured to perform the same are described. One or more methods for memory cell coupling compensation includes determining a state of a memory cell using a voltage that is changed in accordance with a first memory cell coupling compensation voltage, performing an error check on the state of the memory cell, and determining the state of the memory cell using a voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing.

    摘要翻译： 描述了用于存储器单元耦合补偿的方法和被配置为执行其的装置。 用于存储单元耦合补偿的一种或多种方法包括使用根据第一存储单元耦合补偿电压而改变的电压来确定存储单元的状态，对存储单元的状态执行错误检查，以及确定状态 使用响应于错误检查失败的根据第二存储器单元耦合补偿电压而改变的电压的存储器单元。