公开(公告)号：US20060018358A1

公开(公告)日：2006-01-26

申请号：US11144772

申请日：2005-06-06

申请人： Tomoko Kadowaki ,  Tohru Takiguchi ,  Toshio Tanaka ,  Yutaka Mihashi

发明人： Tomoko Kadowaki ,  Tohru Takiguchi ,  Toshio Tanaka ,  Yutaka Mihashi

IPC分类号： H01S3/097 ,  H01S5/00

CPC分类号： H01S5/0425 ,  H01S5/0021 ,  H01S5/2214 ,  H01S5/2231

摘要： A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.

摘要翻译： 半导体激光器件包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。 电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形刮削，每个顶点具有小于180度的内角。 由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

公开(公告)号：US07675954B2

公开(公告)日：2010-03-09

申请号：US11144772

申请日：2005-06-06

申请人： Tomoko Kadowaki ,  Tohru Takiguchi ,  Toshio Tanaka ,  Yutaka Mihashi

发明人： Tomoko Kadowaki ,  Tohru Takiguchi ,  Toshio Tanaka ,  Yutaka Mihashi

IPC分类号： H01S5/00 ,  H01S5/02

CPC分类号： H01S5/0425 ,  H01S5/0021 ,  H01S5/2214 ,  H01S5/2231

摘要： A semiconductor laser device includes: an electrically insulating film on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shape with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.

摘要翻译： 半导体激光装置包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。 电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形，每个顶点具有小于180度的内角。 由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

公开(公告)号：US07187701B2

公开(公告)日：2007-03-06

申请号：US10799714

申请日：2004-03-15

申请人： Yutaka Mihashi ,  Tohru Takiguchi ,  Toshio Tanaka ,  Tomoko Kadowaki ,  Yoshihiko Hanamaki ,  Nobuyuki Tomita

发明人： Yutaka Mihashi ,  Tohru Takiguchi ,  Toshio Tanaka ,  Tomoko Kadowaki ,  Yoshihiko Hanamaki ,  Nobuyuki Tomita

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/16 ,  H01S5/2214 ,  H01S5/34366

摘要： A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 μm.

摘要翻译： 脊波导半导体激光器包括有源层，有源层上的半导体层，具有脊形波导，半导体层上的绝缘膜，通过绝缘膜的开口与半导体层接触的第一电极层， 以及在所述第一电极层上具有带状并且沿着所述波导延伸的第二电极层。 从激光谐振器的端面到第二电极层的边缘的距离不超过20μm。

公开(公告)号：US06768760B2

公开(公告)日：2004-07-27

申请号：US10260280

申请日：2002-10-01

申请人： Yutaka Mihashi ,  Tohru Takiguchi ,  Yoshihiko Hanamaki

发明人： Yutaka Mihashi ,  Tohru Takiguchi ,  Yoshihiko Hanamaki

IPC分类号： H01S500

CPC分类号： H01S5/223 ,  H01S5/12 ,  H01S5/124 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2231 ,  H01S5/3211

摘要： A laser device includes a double hetero-structure element constructed by depositing a p-type cladding layer, a quantum well active layer, an n-type thin first cladding layer and an n-type thick second cladding layer sequentially. A ridge-waveguide is shaped between two trenches formed in the second cladding layer. The first cladding layer serves as an etching stopper while etching the second cladding layer to form the two trenches. The trenches reach to or reach in vicinity to the surface of the first cladding layer. High-resistance regions may be formed in portions of the first cladding layer directly underneath the trenches. The thin first cladding layer, suppresses leakage current and improves the temperature characteristics and the operating speed characteristics of the laser device.

摘要翻译： 激光器件包括通过依次沉积p型包覆层，量子阱有源层，n型薄第一覆层和n型厚第二覆层而构成的双异质结构元件。 脊形波导形成在形成在第二覆层中的两个沟槽之间。 第一覆层在蚀刻第二覆层以形成两个沟槽时用作蚀刻停止层。 沟槽到达或到达第一包层的表面附近。 高电阻区域可以形成在第一包层的直接在沟槽下方的部分中。 薄的第一包层抑制漏电流，提高激光装置的温度特性和工作速度特性。

公开(公告)号：US5763287A

公开(公告)日：1998-06-09

申请号：US593348

申请日：1996-01-29

申请人： Takushi Itagaki ,  Tohru Takiguchi ,  Yutaka Mihashi ,  Akira Takemoto

发明人： Takushi Itagaki ,  Tohru Takiguchi ,  Yutaka Mihashi ,  Akira Takemoto

IPC分类号： H01L33/30 ,  H01L33/44 ,  H01L33/58 ,  H01S3/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/20 ,  H01L21/20

CPC分类号： H01S5/026 ,  H01S3/005 ,  H01S5/005 ,  H01S5/2077 ,  Y10S148/095 ,  Y10S438/978

摘要： A method of making a semiconductor optical device, including an integrated laser diode and optical waveguide lens with a continuous resonator extending along a resonator length direction between a pair of resonator facets, includes forming a pair of dielectric films disposed on a surface of a substrate on which a semiconductor layer of the optical waveguide is to be grown, the dielectric films having a linear symmetry about a hypothetical line extending in the resonator length direction, having edges opposing each other and parallel to the hypothetical line, and widths perpendicular to the resonator length direction that gradually narrow toward one facet from a position in the resonator length direction of the films. A mask pattern that produces a precise layer thickness profile is easily designed.

摘要翻译： 一种制造半导体光学器件的方法，包括集成激光二极管和具有在一对谐振器面之间沿谐振器长度方向延伸的连续谐振器的光波导透镜，包括：形成一对电介质膜，该电介质膜设置在衬底的表面上 该光波导的半导体层将被生长，该电介质膜围绕在谐振器长度方向上延伸的假想线具有线性对称性，具有彼此相对并平行于假想线的边缘以及垂直于谐振器长度的宽度 从薄膜的谐振器长度方向的位置向一个小面逐渐变窄的方向。 产生精确的层厚度轮廓的掩模图案是容易设计的。

公开(公告)号：US06583510B2

公开(公告)日：2003-06-24

申请号：US09915269

申请日：2001-07-27

申请人： Yoshihiko Hanamaki ,  Toshio Tanaka ,  Tohru Takiguchi

发明人： Yoshihiko Hanamaki ,  Toshio Tanaka ,  Tohru Takiguchi

IPC分类号： H01L2348

CPC分类号： H01L29/456 ,  H01L29/45 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/22

摘要： An electrode for a semiconductor device includes a gold-containing thin film and a gold-containing plated film on the thin film. The plated film covers the entire thin film. No open surface is present between the thin gold film and the gold plating so no excessive current concentration occurs in any area.

摘要翻译： 用于半导体器件的电极包括薄膜上的含金薄膜和含金的镀膜。 镀膜覆盖整个薄膜。 在薄金膜和金镀层之间不存在开放表面，因此在任何区域都不会出现过大的电流集中。

公开(公告)号：US07504664B2

公开(公告)日：2009-03-17

申请号：US11373167

申请日：2006-03-13

申请人： Tohru Takiguchi

发明人： Tohru Takiguchi

IPC分类号： H01L27/15

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2224 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34313 ,  H01S2304/04

摘要： A semiconductor optical device includes an active layer, a current blocking layer on both sides of the active layer, and a cladding layer on both the active layer and the current blocking layer. The current blocking layer includes a buried layer, at least one intermediate layer of Al(Ga)InAs and a cover blocking layer. The cover blocking layer is located between the cladding layer and the Al(Ga)InAs layers and has a higher oxidation resistance than the Al(Ga)InAs layer. The current blocking layer is grown such that each Al(Ga)InAs layer is not exposed at the surface of the current blocking layer.

摘要翻译： 半导体光学器件包括有源层，有源层两侧的电流阻挡层以及有源层和电流阻挡层两者上的覆层。 电流阻挡层包括掩埋层，Al（Ga）InAs的至少一个中间层和覆盖物阻挡层。 覆盖阻挡层位于包覆层和Al（Ga）InAs层之间，并且具有比Al（Ga）InAs层更高的抗氧化性。 生长电流阻挡层，使得每个Al（Ga）InAs层不暴露在电流阻挡层的表面。

公开(公告)号：US20070045633A1

公开(公告)日：2007-03-01

申请号：US11373167

申请日：2006-03-13

申请人： Tohru Takiguchi

发明人： Tohru Takiguchi

IPC分类号： H01L33/00

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2224 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34313 ,  H01S2304/04

摘要： A semiconductor optical device includes an active layer, a current blocking layer on both sides of the active layers and a cladding layer on both the active layer and the current blocking layer. The current blocking layer includes a buried layer, at least one intermediate layer of Al(Ga)InAs and a cover blocking layer. The cover blocking layer is located between the cladding layer and the Al(Ga)InAs layers and has a higher oxidation resistance than the Al(Ga)InAs layer. The current blocking layer is grown such that each Al(Ga)InAs layer is not exposed at the surface of the current blocking layer.

摘要翻译： 半导体光学器件包括有源层，有源层两侧的电流阻挡层和有源层和电流阻挡层两者上的覆层。 电流阻挡层包括掩埋层，Al（Ga）InAs的至少一个中间层和覆盖物阻挡层。 覆盖阻挡层位于包覆层和Al（Ga）InAs层之间，并且具有比Al（Ga）InAs层更高的抗氧化性。 生长电流阻挡层，使得每个Al（Ga）InAs层不暴露在电流阻挡层的表面。

公开(公告)号：US06741630B2

公开(公告)日：2004-05-25

申请号：US10245495

申请日：2002-09-18

申请人： Tohru Takiguchi

发明人： Tohru Takiguchi

IPC分类号： H01S500

CPC分类号： H01S5/12 ,  H01S5/22 ,  H01S5/3054

摘要： A ridge waveguide distributed feedback laser includes a p-type InGaAsP grating layer having a p-type carrier density ranging from 1.5×1018 cm−3 to 4.0×10−3 cm−3 and preferably from 2.0×1018 cm−3 to 3.0×1018 cm−3. In combination with such raised levels of p-type carrier density in the InGaAsP grating layer, the p-type carrier density may also be enhanced both in a p-type InP layer between the grating layer and a contact layer, and in another p-type InP layer between the grating layer and a quantum well active layer, the density ranging from 1.5×1018 cm−3 to 4.0×1018 cm−3 and preferably from 2.0×1018 cm−3 to 3.0×1018 cm−3.

摘要翻译： 脊波导分布反馈激光器包括p型InGaAsP光栅层，其具有范围为1.5×10 18 cm -3至4.0×10 -3 cm -3的p型载流子密度，优选为2.0×10 <18>厘米-3 -3.0×10 18 cm -3。 结合InGaAsP光栅层中p型载流子浓度的这种升高的水平，p型载流子密度也可以在光栅层和接触层之间的p型InP层中增强， 在光栅层和量子阱活性层之间的InP层的密度范围为1.5×10 18 cm -3至4.0×10 18 cm -3，优选为2.0×10 18 cm -3， 3> 3.0×10 18 cm -3。

公开(公告)号：US5198370A

公开(公告)日：1993-03-30

申请号：US830852

申请日：1992-02-04

申请人： Yuji Ohkura ,  Tohru Takiguchi

发明人： Yuji Ohkura ,  Tohru Takiguchi

IPC分类号： H01L31/10 ,  H01L31/18

CPC分类号： H01L31/1832 ,  Y10S438/919 ,  Y10S438/971

摘要： In a method of producing an infrared detector, a first conductivity type semiconductor layer, in which lattice vacancies acting as first conductivity type carriers are formed by evaporation of an element during annealing, is formed on a substrate and dopant impurities producing a second conductivity type are diffused in an annealing step from the impurity layer into the first conductivity type semiconductor layer to form pixel regions. During the diffusion, the surface of the first conductivity type compound semiconductor layer corresponding to non-pixel regions is exposed. In the regions of the first conductivity type semiconductor layer which becomes non-pixel regions, the first conductivity type carrier concentration increases due to the lattice vacancies generated by the evaporation of an element and, even when the dopant impurity is diffused into these regions, these regions remain first conductivity type regions.

摘要翻译： 在制造红外线检测器的方法中，在基板上形成第一导电型半导体层，其中，作为第一导电型载流子的晶格空位由退火时的元素蒸发而形成，产生第二导电型的掺杂杂质为 在从杂质层到第一导电型半导体层的退火步骤中扩散以形成像素区域。 在扩散期间，暴露与非像素区对应的第一导电型化合物半导体层的表面。 在成为非像素区域的第一导电型半导体层的区域中，由于元素的蒸发产生的晶格空位，第一导电型载流子浓度增加，并且即使当掺杂剂杂质扩散到这些区域中时，这些 区域保持第一导电类型区域。