Concave-convex pattern forming method and magnetic tunnel junction element forming method
    1.
    发明授权
    Concave-convex pattern forming method and magnetic tunnel junction element forming method 有权
    凹凸图案形成方法和磁隧道结元件形成方法

    公开(公告)号:US08420499B2

    公开(公告)日:2013-04-16

    申请号:US13300062

    申请日:2011-11-18

    IPC分类号: H01L21/76

    摘要: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.

    摘要翻译: 根据实施例的形成凹凸图案的方法包括:在基材上形成引导图案,所述引导图案具有凸部; 在引导图案上形成形成层,所述形成层包括通过层叠第一层和第二层而形成的层叠结构,所述第一层包括选自第一金属元素和准金属元素中的至少一种元素,所述第二层包括 与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻,仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻,将其余形成层用作掩模,在基材中形成凹凸图案。

    CONCAVE-CONVEX PATTERN FORMING METHOD AND MAGNETIC TUNNEL JUNCTION ELEMENT FORMING METHOD
    2.
    发明申请
    CONCAVE-CONVEX PATTERN FORMING METHOD AND MAGNETIC TUNNEL JUNCTION ELEMENT FORMING METHOD 有权
    凹凸图案形成方法和磁性隧道结构元素形成方法

    公开(公告)号:US20120115250A1

    公开(公告)日:2012-05-10

    申请号:US13300062

    申请日:2011-11-18

    IPC分类号: H01L21/02 H01L21/28

    摘要: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.

    摘要翻译: 根据实施例的形成凹凸图案的方法包括:在基材上形成引导图案,所述引导图案具有凸部; 在引导图案上形成形成层,所述形成层包括通过层叠第一层和第二层而形成的层叠结构,所述第一层包括选自第一金属元素和准金属元素中的至少一种元素,所述第二层包括 与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻,仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻,将其余形成层用作掩模,在基材中形成凹凸图案。

    Nano-imprint mold and substrate with uneven patterns manufactured by using the mold
    3.
    发明授权
    Nano-imprint mold and substrate with uneven patterns manufactured by using the mold 有权
    纳米压印模具和使用模具制造的不均匀图案的基板

    公开(公告)号:US08419412B2

    公开(公告)日:2013-04-16

    申请号:US13422897

    申请日:2012-03-16

    IPC分类号: B29C59/00

    摘要: According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.

    摘要翻译: 根据一个实施例,纳米压印模具包括形成在基底层上的多对第一和第二突起,其中每一个沿着相同的直线形成。 每个突起具有顶表面和四个侧表面。 第一和第二突起彼此镜像对称。 第一突起的第一侧表面和第二突起的第二侧表面彼此面对。 第一侧表面或第二侧表面与基层的主表面之间的第一角度不小于85°且不大于90°。 第一突起中的第三侧表面或第二突起中的第四侧表面与基底层的主表面之间的第二角度不小于70°且不大于88°。 第一角度大于第二角度。

    NANO-IMPRINT MOLD AND SUBSTRATE WITH UNEVEN PATTERNS MANUFACTURED BY USING THE MOLD
    4.
    发明申请
    NANO-IMPRINT MOLD AND SUBSTRATE WITH UNEVEN PATTERNS MANUFACTURED BY USING THE MOLD 有权
    使用模具制造的未加工图案的纳米印模和基材

    公开(公告)号:US20120196084A1

    公开(公告)日:2012-08-02

    申请号:US13422897

    申请日:2012-03-16

    IPC分类号: B29C59/02 B32B3/10 B82Y40/00

    摘要: According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.

    摘要翻译: 根据一个实施例,纳米压印模具包括形成在基底层上的多对第一和第二突起,其中每一个沿着相同的直线形成。 每个突起具有顶表面和四个侧表面。 第一和第二突起彼此镜像对称。 第一突起的第一侧表面和第二突起的第二侧表面彼此面对。 第一侧表面或第二侧表面与基层的主表面之间的第一角度不小于85°且不大于90°。 第一突起中的第三侧表面或第二突起中的第四侧表面与基底层的主表面之间的第二角度不小于70°且不大于88°。 第一角度大于第二角度。

    Magnetic element and nonvolatile memory device
    5.
    发明授权
    Magnetic element and nonvolatile memory device 失效
    磁性元件和非易失性存储器件

    公开(公告)号:US08576616B2

    公开(公告)日:2013-11-05

    申请号:US13227959

    申请日:2011-09-08

    IPC分类号: G11C11/00

    摘要: According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.

    摘要翻译: 根据一个实施例,磁性元件包括第一和第二导电层,中间互连以及第一和第二堆叠单元。 中间互连设置在导电层之间。 第一层叠单元设置在第一导电层和互连之间,并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元设置在第二导电层和互连之间,并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。 通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

    Magnetic recording element and nonvolatile memory device
    6.
    发明授权
    Magnetic recording element and nonvolatile memory device 失效
    磁记录元件和非易失性存储器件

    公开(公告)号:US08508979B2

    公开(公告)日:2013-08-13

    申请号:US13228040

    申请日:2011-09-08

    IPC分类号: G11C11/00

    摘要: According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

    摘要翻译: 根据一个实施例,磁记录元件包括堆叠体。 堆叠体包括第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一非磁性层设置在第一和第二铁磁层之间。 第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。 第四铁磁层与第三铁磁层层叠。 第二非磁性层设置在第三和第四铁磁层之间。 第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。 通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

    Magnetic recording element and nonvolatile memory device
    7.
    发明授权
    Magnetic recording element and nonvolatile memory device 有权
    磁记录元件和非易失性存储器件

    公开(公告)号:US08488375B2

    公开(公告)日:2013-07-16

    申请号:US13037592

    申请日:2011-03-01

    IPC分类号: G11C11/14

    摘要: According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.

    摘要翻译: 根据一个实施例,磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。 第一堆叠单元包括第一铁磁层,第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。 第二堆叠单元包括第三铁磁层,第四铁磁层和第二非磁性层。 第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。 第一方向与第二方向相反。

    Magnetic memory and method of manufacturing the same
    8.
    发明授权
    Magnetic memory and method of manufacturing the same 有权
    磁存储器及其制造方法

    公开(公告)号:US08710605B2

    公开(公告)日:2014-04-29

    申请号:US13231894

    申请日:2011-09-13

    IPC分类号: H01L29/72

    摘要: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

    摘要翻译: 根据实施例的磁存储器包括:包括作为存储元件的磁阻元件的至少一个存储单元,以及激励磁阻元件的第一和第二电极。 磁阻元件包括:具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层,并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括:第一区域; 以及围绕第一区域的第一区域外的第二区域,并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括:第三区域; 以及第三区域外的第四区域,并且具有比第三区域小的垂直磁各向异性能量。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    9.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号:US20120241827A1

    公开(公告)日:2012-09-27

    申请号:US13210678

    申请日:2011-08-16

    IPC分类号: H01L27/22 H01L43/10 H01L43/02

    摘要: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

    摘要翻译: 根据实施例的磁阻元件包括:第一至第三铁磁层和第一非磁性层,第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴,所述第三铁磁层包括 多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。 旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动,旋转磁场由进动运动产生,并且是 施加到第一铁磁层,并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。