摘要:
An electrode drive circuit performs interlaced scanning, ensuring that the phases of the sustaining pulse in odd-numbered lines and even-numbered lines among L1 to L8 between surface discharge electrodes are the reverse of each other. With this, when either odd-numbered lines or even-numbered lines are displayed, the voltages applied between the electrodes of the undisplayed lines are at 0, eliminating the necessity for partitioning walls on the surface discharge electrodes. In surface discharge electrodes, X electrodes are provided on the two sides of a Y electrode and the area between the Y electrode and the X electrode on one side is assigned a display line at an odd-numbered frame, and the area between the Y electrode and the X electrode on the other side is assigned a display line in an even-numbered frame. Alternate areas between the surface discharge electrodes are assigned as blind lines and a discharge light emission in the blind lines is blocked or incident light to the blind lines from the outside is absorbed. Address electrodes are provided for each monochromatic pixel column and selectively connected with the pads above them, performing simultaneous selection of lines.
摘要:
Method for driving a plasma display panel. At least one first discharge sustaining pulse is applied to a first pair of display electrodes, and at least one second discharge sustaining pulse applied to an adjacent pair of display electrodes. The first and second discharge sustaining pulses are applied such that they are in the same phase as one another and/or such that a current in the first pair of display electrodes flows in the opposite direction from a current in the adjacent pair of display electrodes.
摘要:
An electrode drive circuit performs interlaced scanning, ensuring that the phases of the sustaining pulse in odd-numbered lines and even-numbered lines among L1 to L8 between surface discharge electrodes are the reverse of each other. With this, when either odd-numbered lines or even-numbered lines are displayed, the voltages applied between the electrodes of the undisplayed lines are at 0, eliminating the necessity for partitioning walls on the surface discharge electrodes. In surface discharge electrodes, X electrodes are provided on the two sides of a Y electrode and the area between the Y electrode and the X electrode on one side is assigned a display line at an odd-numbered frame, and the area between the Y electrode and the X electrode on the other side is assigned a display line in an even-numbered frame. Alternate areas between the surface discharge electrodes are assigned as blind lines and a discharge light emission in the blind lines is blocked or incident light to the blind lines from the outside is absorbed. Address electrodes are provided for each monochromatic pixel column and selectively connected with the pads above them, performing simultaneous selection of lines.
摘要:
A method for driving a plasma display panel, including a plurality of display electrode pairs and a plurality of address electrodes, and which includes at least an address period and a sustain discharge period. In the address period, performing address processing, between the address electrodes and a display electrode configured as either a set of odd or even numbered display electrodes, sequentially to all of one of the sets of display electrode pairs, and thereafter address processing, between the address electrodes and a display electrode configured as the other set of display electrode pairs, sequentially to all of the other set of display electrode pairs. In the sustain discharge period, supplying at least one first sustain discharge pulse to the one set of display electrode pairs, and supplying at least one second sustain discharge pulse to the other set of display electrode pairs.
摘要:
An electrode drive circuit performs interlaced scanning, ensuring that the phases of the sustaining pulse in odd-numbered lines and even-numbered lines among L1 to L8 between surface discharge electrodes are the reverse of each other. With this, when either odd-numbered lines or even-numbered lines are displayed, the voltages applied between the electrodes of the undisplayed lines are at 0, eliminating the necessity for partitioning walls on the surface discharge electrodes. In surface discharge electrodes, X electrodes are provided on the two sides of a Y electrode and the area between the Y electrode and the X electrode on one side is assigned a display line at an odd-numbered frame, and the area between the Y electrode and the X electrode on the other side is assigned a display line in an even-numbered frame. Alternate areas between the surface discharge electrodes are assigned as blind lines and a discharge light emission in the blind lines is blocked or incident light to the blind lines from the outside is absorbed. Address electrodes are provided for each monochromatic pixel column and selectively connected with the pads above them, performing simultaneous selection of lines.
摘要:
A management information visualization device (management provider server 30) according to the present invention includes: an information registration management unit (information management unit 304) that registers service information transmitted from a service providing device (service provider server 20), associating the service information with user identification information and service content identification information which are related to the service information; and an information input/output unit (user GUI providing unit 303) that receives, from a user device, a request for viewing service information, creates management information (a top screen) including a service content list associated with service content identification information and transmits the management information to the user device, and, when one of the service content list displayed on the user device being selected by operation, searches in a management information DB300 and transmits corresponding service information to the user device.
摘要:
For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.
摘要:
Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 μm, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.
摘要:
A method of gradation correction for laser scanning exposure is effected, based on measured density values of a test print (TP) including a horizontal stripe test pattern comprised of a plurality of horizontal lines extending in the main scanning direction and a vertical stripe pattern comprised of a plurality of vertical lines extending in the sub scanning direction. The includes the steps of calculating, based on the measured density values, a rising correction amount for main scanning rising correction of adding a rising correction component to one dot after rising of a modulated laser in order to reduce density difference between the horizontal line and the vertical line and calculating, based on the measured density values, a falling correction amount for main scanning falling correction of adding a falling correction component to one dot after rising of the modulated laser in order to reduce the density difference between the horizontal line and the vertical line.
摘要:
In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.