公开(公告)号：US06675737B2

公开(公告)日：2004-01-13

申请号：US10020274

申请日：2001-12-18

申请人： Toshiaki Hongoh ,  Tetsu Osawa ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Toshiaki Hongoh ,  Tetsu Osawa ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C1600

CPC分类号： H01J37/32266 ,  C23C16/511 ,  H01J37/32192

摘要： A plasma processing apparatus includes a process chamber, an insulating plate airtightly attached to the ceiling of the process chamber, a mount base placed in the process chamber for mounting thereon a workpiece to be processed, a planar antenna member placed above the insulating plate and including a microwave radiation hole for transmitting therethrough microwave used for generating plasma, the microwave transmitted through the insulating plate into the process chamber, and a wave-delay member placed above the planar antenna member for reducing the wavelength of microwave. The insulating plate has its peripheral end formed into an uneven shape with depressions and protrusions for causing, reflected waves of the microwave propagated through the insulating plate from the center and in the radial direction of the insulating plate, to cancel out each other.

摘要翻译： 一种等离子体处理装置，包括处理室，密封地附着在处理室的天花板上的绝缘板，放置在处理室中的安装基座，用于在其上安装待处理的工件，设置在绝缘板上方的平面天线构件， 微波辐射孔，用于传输通过用于产生等离子体的微波，通过绝缘板传输到处理室中的微波;以及波延迟构件，放置在平面天线构件上方，用于降低微波的波长。 绝缘板的周端形成为具有凹凸的凹凸形状，从绝缘板的中心部和半径方向引起的绝缘板的微波的反射波相互抵消。

公开(公告)号：US06797111B2

公开(公告)日：2004-09-28

申请号：US10000312

申请日：2001-12-04

申请人： Toshiaki Hongoh ,  Tetsu Osawa

发明人： Toshiaki Hongoh ,  Tetsu Osawa

IPC分类号： H05H100

CPC分类号： C23C16/4411 ,  C23C16/4401 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32458

摘要： A plasma processing apparatus includes a process chamber having a ceiling with an opening, a supporting frame member placed along the periphery of the ceiling and including a ring-shaped supporting shelf protruding toward the center of the process chamber, and an insulating plate having its peripheral portion supported by the supporting shelf of the supporting frame member and airtightly covering the opening of the ceiling of the process chamber. The plasma processing apparatus is characterized in that the supporting shelf has an inner periphery which includes a corner portion shaped into a curve.

摘要翻译： 一种等离子体处理装置，包括具有开口的天花板的处理室，沿天花板周边配置的支撑框架构件，并且具有朝向处理室的中心突出的环状的支撑架，以及具有周边的绝缘板 部分由支撑框架构件的支撑架支撑并且气密地覆盖处理室的天花板的开口。 等离子体处理装置的特征在于，支撑架具有包括成形为曲线的角部的内周。

公开(公告)号：US5820367A

公开(公告)日：1998-10-13

申请号：US715241

申请日：1996-09-18

申请人： Tetsu Osawa

发明人： Tetsu Osawa

IPC分类号： H01L21/683 ,  C30B25/12 ,  C30B31/14 ,  H01L21/22 ,  H01L21/31 ,  H01L21/324 ,  H01L21/673 ,  F27D5/00

CPC分类号： C30B31/14 ,  C30B25/12

摘要： Support members are provided in a vertically spaced relation on a plurality of upright columns. A wafer support member comprises a projection formed to be annular along an inner peripheral edge of a ring and an outer wall formed along an outer peripheral edge thereof. The wafer is positively supported at a position inwardly of the outer peripheral edge thereof by the projection of the wafer support member despite the presence or absence of a warp thereof. Therefore, a load caused by the weight of the wafer is dispersed over the entire projection of the wafer support member. This suppresses the concentration of stress on a specific portion of the wafer support portion, and a surface defect called a slip generated when the wafer is heat treated can be eliminated.

摘要翻译： 在多个立柱上以垂直间隔的关系提供支撑构件。 晶片支撑构件包括沿着环的内周边缘形成为环形的突起和沿其外周边缘形成的外壁。 即使存在或不存在其翘曲，晶片通过晶片支撑构件的突起在其外周边缘的内侧的位置处被可靠地支撑。 因此，由晶片的重量引起的载荷分散在晶片支撑构件的整个突起上。 这抑制了晶片支撑部分的特定部分上的应力集中，并且可以消除称为晶片被热处理时产生的滑动的表面缺陷。

公开(公告)号：US5357115A

公开(公告)日：1994-10-18

申请号：US109733

申请日：1993-08-20

申请人： Teruo Asakawa ,  Tetsu Osawa ,  Noboru Hosaka

发明人： Teruo Asakawa ,  Tetsu Osawa ,  Noboru Hosaka

IPC分类号： B65G49/00 ,  C23C14/56 ,  C30B35/00 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/677 ,  H01J37/20

CPC分类号： H01L21/67069 ,  C30B35/005 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67259 ,  H01L21/67745

摘要： Load lock chambers having a function of detecting positional deviation of wafers are provided in a process chamber of an ion injection apparatus, two on a carrying-in side, and two on a carrying-out side. One load lock chamber on the carrying-in side and one on the carrying-out side are used as a standby. Carrying-in and carrying-out members are outside of the process chamber. Two transfer members are in the process chamber. A dummy wafer stage is formed at a position which can be accessed by the transfer members. Wafers are transferred from load stages by the carrying-in member via the load lock chambers to the process chamber through a double operation line. Loading a wafer on the turn table and unloading a wafer therefrom can be performed simultaneously by operations of the transfer members and. The wafers are similarly carried out of the apparatus in a double operation line. At this time, dummy wafers in the process chamber can be used, if necessary.

摘要翻译： 具有检测晶片位置偏差功能的加载锁定室设置在离子注入装置的处理室中，两个位于输入侧，两个位于输出侧。 使用侧的一个装载锁定室和一个在进出侧的装载锁定室用作备用。 携带和携带成员在处理室之外。 两个转移构件位于处理室中。 虚设晶片台形成在能够被转印部件访问的位置。 晶片从负载阶段通过承载构件经由负载锁定室通过双重操作线路传送到处理室。 将转盘上的晶片装载并卸载晶片可以通过转印部件的操作同时进行。 晶圆类似地在双重操作线中由设备执行。 此时，如果需要，可以使用处理室中的虚设晶片。

公开(公告)号：US20070254113A1

公开(公告)日：2007-11-01

申请号：US11785356

申请日：2007-04-17

申请人： Toshiaki Hongo ,  Tetsu Osawa

发明人： Toshiaki Hongo ,  Tetsu Osawa

IPC分类号： H05H1/24

CPC分类号： C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

摘要： A plasma processing apparatus can apply a high-quality process to an object to be processed by removing impurities from a gas-introducing part of a process chamber. The gas-introducing part connected to the process chamber so as to introduce a reactant gas into the process chamber. A first vacuum pump is connected to the process chamber so as to evacuate gas from the process chamber so that the process chamber is maintained at a negative pressure. A gas-evacuating arrangement is connected to the gas-introducing part so as to exclusively evacuate the reactant gas from the gas-introducing part. The gas-evacuating arrangement includes a second vacuum pump directly connected to the gas introducing part or a bypass passage connecting the gas-introducing par to the first vacuum pump by bypassing the process chamber.

摘要翻译： 等离子体处理装置可以通过从处理室的气体导入部分去除杂质来对待处理物体施加高质量的工艺。 气体导入部连接到处理室，以将反应气体引入处理室。 第一真空泵连接到处理室，以便从处理室排出气体，使得处理室保持在负压。 气体排出装置连接到气体导入部，从而仅从气体导入部排出反应气体。 气体排出装置包括直接连接到气体引入部分的第二真空泵或通过绕过处理室将气体导入分支连接到第一真空泵的旁通通道。

公开(公告)号：US06259061B1

公开(公告)日：2001-07-10

申请号：US09150303

申请日：1998-09-09

申请人： Tetsu Osawa

发明人： Tetsu Osawa

IPC分类号： H01L2122

CPC分类号： H01L21/67109

摘要： A vertical-heat-treatment apparatus for semiconductor wafers has a compensation heater disposed under a lid for opening and closing a port at the bottom of a process chamber. The compensation heater heats the semiconductor wafers on a wafer boat from below through a window arranged on the lid. The compensation heater has seven heating lamps attached to a fixed base, which is vertically moved along with the lid, and rotatable reflection mirrors respectively surrounding the lamps.

摘要翻译： 用于半导体晶片的立式热处理装置具有设置在盖子下方的补偿加热器，用于打开和关闭处理室底部的端口。 补偿加热器通过布置在盖子上的窗口从下方将晶片舟皿上的半导体晶片加热。 补偿加热器具有七个加热灯，其附接到固定基座，其与盖一起垂直移动，以及分别围绕灯的可旋转反射镜。

公开(公告)号：US06123429A

公开(公告)日：2000-09-26

申请号：US079290

申请日：1998-05-15

申请人： Tetsu Osawa

发明人： Tetsu Osawa

IPC分类号： F21V7/00 ,  F21V7/08 ,  F21V7/09 ,  F21V8/00 ,  F21V13/04 ,  F21V14/02 ,  F21V19/02 ,  G02B27/00 ,  G02B5/10 ,  H01J5/16

CPC分类号： F21V7/0016 ,  F21S48/1388 ,  F21S48/1742 ,  F21V13/04 ,  F21V19/02 ,  F21V7/005 ,  G02B6/0006 ,  F21V7/08

摘要： A light source device has a first mirror for reflecting light emitted by a light source, and a second mirror for reflecting the light reflected by the first mirror and guiding the reflected light toward the irradiation target portion. The first mirror has a curved reflection surface having an elliptic or parabolic shape in section along the optical axis direction. The light source is set at the position of a focal point of the elliptic or parabolic shape of the curved reflection surface. The second mirror has a linear reflection surface which has a linear shape in section along the optical axis direction and faces the curved reflection surface of the first mirror.

摘要翻译： 光源装置具有用于反射由光源发射的光的第一反射镜和用于反射由第一反射镜反射的光并将反射光引向照射目标部分的第二反射镜。 第一反射镜具有沿光轴方向具有椭圆形或抛物线形状的弯曲反射面。 光源设置在弯曲反射面的椭圆形或抛物线形状的焦点的位置。 第二反射镜具有沿着光轴方向具有直线形状并且面向第一反射镜的弯曲反射面的线性反射面。

公开(公告)号：US6080965A

公开(公告)日：2000-06-27

申请号：US150300

申请日：1998-09-09

申请人： Tetsu Osawa

发明人： Tetsu Osawa

IPC分类号： H01L21/00 ,  A21B1/00

CPC分类号： H01L21/67115

摘要： A single-substrate-heat-treatment apparatus heats a semiconductor wafer by scanning the wafer with light having high energy density. Light emitted by a light source is reflected by a reflection mirror mechanism, and is then focused on the surface of the wafer on a work table via a transparent window of a process chamber. During heat treatment, the work table or reflection mirror mechanism is moved to scan the wafer surface with the light coming from the light source.

摘要翻译： 单基板热处理装置通过用具有高能量密度的光扫描晶片来加热半导体晶片。 由光源发射的光被反射镜机构反射，然后经由处理室的透明窗口在工作台上聚焦在晶片的表面上。 在热处理期间，移动工作台或反射镜机构，用来自光源的光来扫描晶片表面。

公开(公告)号：US07393172B1

公开(公告)日：2008-07-01

申请号：US10048012

申请日：2000-07-26

申请人： Hiroaki Saeki ,  Masaki Narushima ,  Tetsu Osawa ,  Yasushi Taniyama ,  Shuuji Hagiwara

发明人： Hiroaki Saeki ,  Masaki Narushima ,  Tetsu Osawa ,  Yasushi Taniyama ,  Shuuji Hagiwara

IPC分类号： H01L21/677

CPC分类号： H01L21/68707 ,  H01L21/67766 ,  Y10S414/137

摘要： In a wafer transfer system wherein a wafer transfer robot linearly reciprocates by a linear motor, dust is prevented from adhering to a wafer.A fixed base 9, on which the secondary side 11 of a linear motor M for linearly reciprocating a wafer transfer robot R is mounted, is mounted on the system body 1 of a wafer transfer system A in lateral directions and in vertical directions, so that dust dropping in accordance with the flow of clean air K from a clean air supply system 4 is directly sucked into an exhaust fan 5, which is provided on the bottom portion 1c of the system body 1, to be exhausted without being deposited on the top face of the fixed base 9 and the secondary side 11.

摘要翻译： 在其中晶片传送机器人通过线性电动机线性往复运动的晶片传送系统中，防止灰尘附着在晶片上。 在晶片传送系统A的系统主体1上沿横向和垂直方向安装固定基座9，其上安装有晶片传送机器人R用于线性往复运动的线性电动机M的次级侧11，使得 根据来自清洁空气供给系统4的清洁空气K的流动的粉尘直接吸入设置在系统主体1的底部1c上的排气扇5，而不会沉积在排气扇5上 固定底座9和次侧11的顶面。

公开(公告)号：US06372084B1

公开(公告)日：2002-04-16

申请号：US09815304

申请日：2001-03-23

申请人： Toshiaki Hongo ,  Tetsu Osawa

发明人： Toshiaki Hongo ,  Tetsu Osawa

IPC分类号： H01L2100

摘要： A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength &lgr; of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength &lgr; is represented by &lgr;=&lgr;0n, where &lgr;0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(&egr;t)½, where &egr;t is a specific dielectric rate of the dielectric plate in a vacuum.