公开(公告)号：US06675737B2

公开(公告)日：2004-01-13

申请号：US10020274

申请日：2001-12-18

申请人： Toshiaki Hongoh ,  Tetsu Osawa ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Toshiaki Hongoh ,  Tetsu Osawa ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C1600

CPC分类号： H01J37/32266 ,  C23C16/511 ,  H01J37/32192

摘要： A plasma processing apparatus includes a process chamber, an insulating plate airtightly attached to the ceiling of the process chamber, a mount base placed in the process chamber for mounting thereon a workpiece to be processed, a planar antenna member placed above the insulating plate and including a microwave radiation hole for transmitting therethrough microwave used for generating plasma, the microwave transmitted through the insulating plate into the process chamber, and a wave-delay member placed above the planar antenna member for reducing the wavelength of microwave. The insulating plate has its peripheral end formed into an uneven shape with depressions and protrusions for causing, reflected waves of the microwave propagated through the insulating plate from the center and in the radial direction of the insulating plate, to cancel out each other.

摘要翻译： 一种等离子体处理装置，包括处理室，密封地附着在处理室的天花板上的绝缘板，放置在处理室中的安装基座，用于在其上安装待处理的工件，设置在绝缘板上方的平面天线构件， 微波辐射孔，用于传输通过用于产生等离子体的微波，通过绝缘板传输到处理室中的微波;以及波延迟构件，放置在平面天线构件上方，用于降低微波的波长。 绝缘板的周端形成为具有凹凸的凹凸形状，从绝缘板的中心部和半径方向引起的绝缘板的微波的反射波相互抵消。

公开(公告)号：US06797111B2

公开(公告)日：2004-09-28

申请号：US10000312

申请日：2001-12-04

申请人： Toshiaki Hongoh ,  Tetsu Osawa

发明人： Toshiaki Hongoh ,  Tetsu Osawa

IPC分类号： H05H100

CPC分类号： C23C16/4411 ,  C23C16/4401 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32458

摘要： A plasma processing apparatus includes a process chamber having a ceiling with an opening, a supporting frame member placed along the periphery of the ceiling and including a ring-shaped supporting shelf protruding toward the center of the process chamber, and an insulating plate having its peripheral portion supported by the supporting shelf of the supporting frame member and airtightly covering the opening of the ceiling of the process chamber. The plasma processing apparatus is characterized in that the supporting shelf has an inner periphery which includes a corner portion shaped into a curve.

摘要翻译： 一种等离子体处理装置，包括具有开口的天花板的处理室，沿天花板周边配置的支撑框架构件，并且具有朝向处理室的中心突出的环状的支撑架，以及具有周边的绝缘板 部分由支撑框架构件的支撑架支撑并且气密地覆盖处理室的天花板的开口。 等离子体处理装置的特征在于，支撑架具有包括成形为曲线的角部的内周。

公开(公告)号：US20050148167A1

公开(公告)日：2005-07-07

申请号：US11041303

申请日：2005-01-25

申请人： Toshiaki Hongoh ,  Satohiko Hoshino

发明人： Toshiaki Hongoh ,  Satohiko Hoshino

IPC分类号： B05D7/24 ,  H01J37/32 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0234 ,  B05D1/62 ,  H01J37/32192 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/76826

摘要： In a method for forming an insulating film, a film containing an organic curable material and provided on a substrate for an electronic device is irradiated with an energy plasma produced by a microwave irradiation through a planar antenna member having a plurality of slits to thereby cure the film containing the organic curable material and form the insulating film having a dielectric constant of 3 or less.

摘要翻译： 在形成绝缘膜的方法中，通过具有多个狭缝的平面天线构件，通过微波照射产生的能量等离子体照射含有有机可固化材料并且设置在电子器件用基板上的膜，从而使 含有有机可固化材料的膜，并形成介电常数为3以下的绝缘膜。

公开(公告)号：US07018506B2

公开(公告)日：2006-03-28

申请号：US10458239

申请日：2003-06-11

申请人： Toshiaki Hongoh ,  Naoki Matsumoto ,  Chishio Koshimizu

发明人： Toshiaki Hongoh ,  Naoki Matsumoto ,  Chishio Koshimizu

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  C23C16/507 ,  H01J37/32091

摘要： A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.

摘要翻译： 等离子体处理装置包括将高频感应天线与真空室分离的板。 板包括具有开口的非磁性金属板和密封开口的电介质材料构件。 非磁性金属板的面积大于介电材料构件的面积。

公开(公告)号：USRE39020E1

公开(公告)日：2006-03-21

申请号：US09478370

申请日：2000-02-16

申请人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

发明人： Kiichi Hama ,  Jiro Hata ,  Toshiaki Hongoh

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/4586 ,  C23C16/466 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH4 and H2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH4 and H2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.

摘要翻译： 用于在LCD基板上形成硅膜的等离子体CVD装置包括通过石英隔板将其分为工艺和上室的容器。 安装有基板的工作台布置在处理室中，并且施加高频电位的下电极布置在工作台中。 第一下供应头和第二上供应头布置在处理室中的分隔板和工作台之间。 SiH 4和H 2气体，He气体通过第一和第二供应头供应。 He气被转化为等离子体，而SiH 4和H 2气体被等离子体激发并分解。 两个线圈布置在上部腔室中，并且高频电压施加到线圈以产生电磁场以诱导He气体转化为等离子体。 施加到线圈的高频电压的相位相同，并且流过线圈相邻部分的电流方向相同。

公开(公告)号：US06325018B1

公开(公告)日：2001-12-04

申请号：US09521649

申请日：2000-03-08

申请人： Toshiaki Hongoh

发明人： Toshiaki Hongoh

IPC分类号： C23C1600

CPC分类号： H01J37/32211 ,  H01J37/32192 ,  H05H1/46

摘要： A flat antenna radiates a microwave toward a process chamber so as to generate a plasma within the process chamber. The flat antenna has a front surface to which the microwave is supplied and a back surface opposite to the front surface. The microwave is supplied to a center portion of the front surface and propagates in radial directions within the flat antenna. A plurality of openings extend between the front surface and the back surface of the flat antenna. A conductive member is located in each of the openings so that a circularly polarized microwave is radiated by each of the openings.

摘要翻译： 平面天线朝向处理室辐射微波，以便在处理室内产生等离子体。 扁平天线具有供给微波的前表面和与前表面相对的后表面。 微波被提供给前表面的中心部分并且在平面天线内沿径向方向传播。 多个开口在平面天线的前表面和后表面之间延伸。 导电构件位于每个开口中，使得每个开口辐射圆偏振的微波。

公开(公告)号：US5716451A

公开(公告)日：1998-02-10

申请号：US689780

申请日：1996-08-14

申请人： Kiichi Hama ,  Toshiaki Hongoh ,  Yasuyuki Kuriki

发明人： Kiichi Hama ,  Toshiaki Hongoh ,  Yasuyuki Kuriki

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/321

摘要： A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room at a vacuum. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of said process gas is turned into plasma by the electric field.

摘要翻译： 用于处理LCD基板的感应耦合型等离子体蚀刻装置具有形成气密处理室的处理容器。 工作台布置在处理室中，用于支撑LCD基板。 真空泵设置为在真空下排气和设置处理室。 具有多个电介质层的天线块布置成面对工作台。 RF天线嵌入在用于形成电场的天线块的电介质层之一中。 电源连接到RF天线以施加RF功率。 天线块的最下层形成为用于从RF天线和工作台之间的位置向处理室提供处理气体的喷淋头。 所述工艺气体的至少一部分通过电场变成等离子体。

公开(公告)号：US06736930B1

公开(公告)日：2004-05-18

申请号：US09536721

申请日：2000-03-28

申请人： Toshiaki Hongoh

发明人： Toshiaki Hongoh

IPC分类号： H01L2100

CPC分类号： H01L21/67248 ,  H01J37/32192 ,  H01L21/67069

摘要： A microwave plasma processing apparatus prevents the component parts of a process chamber from being influenced by heat associated with plasma, thereby improving the quality of plasma processing performed in the process chamber. A wavelength reducing member reduces a wavelength of a microwave transmitted therethrough. A slot electrode guides the microwave exiting the wavelength reducing member, the slot electrode provided adjacent to the wavelength reducing member. A first temperature control device controls a temperature of at least one of the slot electrode and component parts including the wavelength reducing member provided in the vicinity of the slot electrode. The microwave exiting the slot electrode is introduced to the process chamber so that plasma is generated by the microwave within the process chamber.

摘要翻译： 微波等离子体处理装置防止处理室的组成部分受到与等离子体相关的热的影响，从而提高处理室中进行的等离子体处理的质量。 减少波长的部件减少了通过其传播的微波的波长。 狭缝电极引导离开波长缩短构件的微波，与波长缩短构件相邻设置的槽电极。 第一温度控制装置控制槽电极和包括设置在槽电极附近的波长减小部件的部件中的至少一个的温度。 离开槽电极的微波被引入处理室，使得等离子体由处理室内的微波产生。

公开(公告)号：US06470824B2

公开(公告)日：2002-10-29

申请号：US10123485

申请日：2002-04-17

申请人： Satoru Kawakami ,  Shigemi Murakawa ,  Mitsuhiro Yuasa ,  Toshiaki Hongoh

发明人： Satoru Kawakami ,  Shigemi Murakawa ,  Mitsuhiro Yuasa ,  Toshiaki Hongoh

IPC分类号： C23C1600

CPC分类号： H01J37/32192 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

摘要： In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

摘要翻译： 在处理气体的气氛中，在主要由硅构成的晶片W上，通过具有多个狭缝的平面阵列天线RLSA 60，照射微波以产生含有氧或氮或氧和氮的等离子体并与其一起实施 在晶片W的表面上直接进行氧化，氮化或氧氮化，从而以氧化物膜形成厚度为1nm以下的绝缘膜2。 可以获得能够成功地调节硅衬底和SiN膜之间的界面的膜​​质量并且可以在短时间内形成高质量的SiN膜的半导体的制造方法和装置。

公开(公告)号：US06358324B1

公开(公告)日：2002-03-19

申请号：US09559750

申请日：2000-04-27

申请人： Toshiaki Hongoh ,  Tetsu Oosawa ,  Satoru Kawakami ,  Mitsuhiro Yuasa

发明人： Toshiaki Hongoh ,  Tetsu Oosawa ,  Satoru Kawakami ,  Mitsuhiro Yuasa

IPC分类号： C23C1600

CPC分类号： H01J37/32834 ,  C23C16/0209 ,  C23C16/4583 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222

摘要： A microwave plasma processing apparatus has a process chamber in which an object to be processed is subjected to plasma processing under a predetermined negative pressure environment. A susceptor holding the object thereon is provided in the process chamber. The susceptor is moved by a susceptor moving member which is moved by a susceptor moving mechanism located outside the process chamber. The susceptor moving member extends from the process chamber via a bellows provided to a bottom of the process chamber. The bellows allows a vertical movement of the susceptor moving member while providing a hermetic seal to the process chamber to maintain the predetermined negative pressure environment in the process chamber. A vacuum pump is provided to the bottom of the process chamber so that an inlet opening of the vacuum pump aligns with the susceptor in the vertical direction.

摘要翻译： 微波等离子体处理装置具有处理室，在该处理室中，在预定的负压环境下对被处理物进行等离子体处理。 在处理室中设置有保持物体的基座。 基座由基座移动构件移动，基座移动构件由位于处理室外的基座移动机构移动。 基座移动构件通过设置在处理室底部的波纹管从处理室延伸。 波纹管允许基座移动构件的垂直移动，同时向处理室提供气密密封，以保持处理室中的预定负压环境。 真空泵设置在处理室的底部，使得真空泵的入口在垂直方向上与基座对准。