公开(公告)号：US10818688B2

公开(公告)日：2020-10-27

申请号：US16124112

申请日：2018-09-06

申请人： TOSHIBA MEMORY CORPORATION

发明人： Atsushi Murakoshi ,  Hiroki Sasaki

IPC分类号： H01L27/11582 ,  H01L29/51 ,  H01L29/66 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11514

摘要： A storage device includes: a plurality of electrode films stacked in a first direction, and extending in a second direction intersecting the first direction; a first semiconductor film provided adjacent to the plurality of electrode films, and extending in the first direction; a first charge holding film provided between one electrode film among the plurality of electrode films, and the semiconductor film, and including any one of a metal, a metal compound, and a high dielectric material; and a second semiconductor film located between the first semiconductor film and the charge holding film, and extending in the first direction along the first semiconductor film. The second semiconductor film is electrically insulated from the plurality of electrode films, the first charge holding film, and the first semiconductor film.

公开(公告)号：US10438959B2

公开(公告)日：2019-10-08

申请号：US16012285

申请日：2018-06-19

申请人： Toshiba Memory Corporation

发明人： Tatsuya Kato ,  Atsushi Murakoshi ,  Fumitaka Arai

IPC分类号： H01L29/76 ,  H01L27/11521 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11548

摘要： A semiconductor memory device includes a first electrode film and a second electrode film spreading along a first direction and a second direction, first insulating plates intermittently disposed along the first direction and each of two columns separated in the second direction from each other, second insulating plates provided between the two columns, intermittently disposed along the first direction and each of n columns, third insulating plates provided between one of the two columns and a column formed of the second insulating plates, intermittently disposed along the first direction, a first insulating member provided between the first insulating plate and the third insulating plate, and a second insulating member provided between the second insulating plate and the third insulating plate. The first electrode film is divided into two parts between the two columns. The second electrode film is divided into {(n+1)×2} parts between the two columns.

公开(公告)号：US10020315B1

公开(公告)日：2018-07-10

申请号：US15705514

申请日：2017-09-15

申请人： Toshiba Memory Corporation

发明人： Tatsuya Kato ,  Atsushi Murakoshi ,  Fumitaka Arai

IPC分类号： H01L29/76 ,  H01L27/11521 ,  H01L27/11556

CPC分类号： H01L27/11521 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11556

摘要： A semiconductor memory device includes a first electrode film and a second electrode film spreading along a first direction and a second direction, first insulating plates intermittently disposed along the first direction and each of two columns separated in the second direction from each other, second insulating plates provided between the two columns, intermittently disposed along the first direction and each of n columns, third insulating plates provided between one of the two columns and a column formed of the second insulating plates, intermittently disposed along the first direction, a first insulating member provided between the first insulating plate and the third insulating plate, and a second insulating member provided between the second insulating plate and the third insulating plate. The first electrode film is divided into two parts between the two columns. The second electrode film is divided into {(n+1)×2} parts between the two columns.

公开(公告)号：US10903228B2

公开(公告)日：2021-01-26

申请号：US16114074

申请日：2018-08-27

申请人： TOSHIBA MEMORY CORPORATION

发明人： Hiroki Sasaki ,  Atsushi Murakoshi ,  Ryuji Ohba

IPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L23/532 ,  G11C7/06 ,  H01L21/768 ,  G11C8/14 ,  H01L29/792 ,  G11C8/10 ,  G11C7/18 ,  H01L29/788 ,  H01L27/11556

摘要： A semiconductor storage device includes a semiconductor substrate and a plurality of first wiring layers stacked above the semiconductor substrate in a first direction orthogonal to the semiconductor substrate, and extending in a second direction intersecting the first direction and parallel to the semiconductor substrate. The device further includes a first memory pillar including a semiconductor layer and a first insulation layer extending in the first direction, the first insulation layer provided between the plurality of first wiring layers and the semiconductor layer so as to contact the semiconductor layer, and charge storage layers provided respectively between the plurality of first wiring layers and the first insulation layer. One or more of the charge storage layers is in contact with the first insulation layer. A plurality of second insulation layers is provided between each of the plurality of first wiring layers and each of the charge storage layers.

公开(公告)号：US10541311B2

公开(公告)日：2020-01-21

申请号：US15263459

申请日：2016-09-13

申请人： Toshiba Memory Corporation

发明人： Katsuyuki Sekine ,  Tatsuya Kato ,  Fumitaka Arai ,  Toshiyuki Iwamoto ,  Yuta Watanabe ,  Atsushi Murakoshi

IPC分类号： H01L29/423 ,  H01L27/115 ,  H01L23/528 ,  H01L21/28 ,  H01L27/11556 ,  H01L21/285 ,  H01L21/768

摘要： In a semiconductor memory device, first insulating films are arranged along a first direction and a second direction and extend in a third direction. Interconnect is disposed between the first insulating films in the first direction and extends in the third direction. Electrodes are disposed between the first insulating films in the first direction on a second direction side of the interconnect, and is arranged along the third direction. Second insulating film is disposed between the interconnect and the electrodes. Semiconductor members are arranged along the third direction between the first insulating films in the second direction and extend in the first direction. The electrode is disposed between the interconnect and the semiconductor members. Third insulating film is disposed between the electrodes and the semiconductor member and is thicker than the second insulating film.

公开(公告)号：US10276586B2

公开(公告)日：2019-04-30

申请号：US15254014

申请日：2016-09-01

申请人： TOSHIBA MEMORY CORPORATION

发明人： Atsushi Murakoshi ,  Yasuhito Yoshimizu ,  Tomofumi Inoue ,  Tatsuya Kato ,  Yuta Watanabe ,  Fumitaka Arai

IPC分类号： H01L27/115 ,  H01L29/792 ,  H01L29/423 ,  H01L29/66 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11578 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11575 ,  H01L21/28

摘要： According to one embodiment, a semiconductor device includes a substrate and a semiconductor layer. The device further includes a first electrode layer that is provided on a side surface of the semiconductor layer with a first insulating film interposed therebetween. The device further includes a charge storage layer provided on a side surface of the first electrode layer with the second insulating film interposed therebetween.

公开(公告)号：US20180301461A1

公开(公告)日：2018-10-18

申请号：US16012285

申请日：2018-06-19

申请人： Toshiba Memory Corporation

发明人： Tatsuya Kato ,  Atsushi Murakoshi ,  Fumitaka Arai

IPC分类号： H01L27/11521 ,  H01L27/11556

CPC分类号： H01L27/11521 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11556

摘要： A semiconductor memory device includes a first electrode film and a second electrode film spreading along a first direction and a second direction, first insulating plates intermittently disposed along the first direction and each of two columns separated in the second direction from each other, second insulating plates provided between the two columns, intermittently disposed along the first direction and each of n columns, third insulating plates provided between one of the two columns and a column formed of the second insulating plates, intermittently disposed along the first direction, a first insulating member provided between the first insulating plate and the third insulating plate, and a second insulating member provided between the second insulating plate and the third insulating plate. The first electrode film is divided into two parts between the two columns. The second electrode film is divided into {(n+1)×2} parts between the two columns.

公开(公告)号：US09966381B2

公开(公告)日：2018-05-08

申请号：US15267776

申请日：2016-09-16

申请人： Toshiba Memory Corporation

发明人： Fumitaka Arai ,  Tatsuya Kato ,  Satoshi Nagashima ,  Katsuyuki Sekine ,  Yuta Watanabe ,  Keisuke Kikutani ,  Atsushi Murakoshi

IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L21/768 ,  H01L23/535 ,  H01L29/788 ,  H01L21/3105 ,  H01L27/11556 ,  H01L27/11519

CPC分类号： H01L27/11556 ,  H01L21/28273 ,  H01L21/31051 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/535 ,  H01L27/11519 ,  H01L27/11531 ,  H01L27/11548 ,  H01L29/7883 ,  H01L29/7889

摘要： A semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a first conductive film provided on a first region of the first insulating film, a second conductive film provided on a second region of the first insulating film, a first stacked body provided on the first conductive film, a second stacked body provided on the second conductive film, a first semiconductor pillar, and two conductive pillars. In the first stacked body, a second insulating film and an electrode film are stacked alternately. In the second stacked body, a third insulating film and a first film are stacked alternately. The two conductive pillars extend in the first direction through the second stacked body, are separated from the second conductive film, sandwich the second conductive film, and are connected at a bottom ends of the second conductive pillars to the semiconductor substrate.

公开(公告)号：US09847342B2

公开(公告)日：2017-12-19

申请号：US15268126

申请日：2016-09-16

申请人： Toshiba Memory Corporation

发明人： Satoshi Nagashima ,  Katsumi Yamamoto ,  Kohei Sakaike ,  Tatsuya Kato ,  Keisuke Kikutani ,  Fumitaka Arai ,  Atsushi Murakoshi ,  Shunichi Takeuchi ,  Katsuyuki Sekine

IPC分类号： H01L29/788 ,  H01L27/11556 ,  H01L29/51 ,  H01L27/11521 ,  H01L29/06 ,  H01L21/31 ,  H01L21/306

CPC分类号： H01L27/11556 ,  H01L27/11519 ,  H01L29/0649

摘要： A semiconductor memory device includes a first structural body, a second structural body and interconnections. The first and the second structural bodies are separated in a first direction and extend in a second direction. The interconnections are provided between the first structural body and the second structural body, extend in the second direction, and are separated from each other along a third direction. The first and the second structural bodies each includes an insulating member, a column-shaped body and an insulating film. The insulating member and the column-shaped body are disposed in an alternating manner along the second direction and extend in the third direction. The insulating members of the first and second structural bodies make contact with the interconnections.