公开(公告)号：US20200303027A1

公开(公告)日：2020-09-24

申请号：US16558868

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yoshihiro UEDA ,  Shinji MIYANO

IPC: G11C19/08

Abstract: A magnetic storage device includes a magnetic body including first and second magnetic regions and a magnetic connection region that connects the first and second magnetic regions, and in which a plurality of magnetic domains each storing information by a magnetization direction thereof is formed, a read element that is electrically connected to the magnetic connection region and by which a magnetization direction of one of the magnetic domains is read, and a write element by which a magnetic domain having a magnetization direction is formed in the magnetic body according to information to be stored. The magnetic domains formed in each of the first and second magnetic regions are shifted in a predetermined direction in response to current that flows through the corresponding one of the first and second magnetic regions.

公开(公告)号：US20190088712A1

公开(公告)日：2019-03-21

申请号：US15917145

申请日：2018-03-09

Applicant: Toshiba Memory Corporation

Inventor： Masaki KADO ,  Tsuyoshi KONDO ,  Yasuaki OOTERA ,  Takuya SHIMADA ,  Michael Arnaud QUINSAT ,  Nobuyuki UMETSU ,  Susumu HASHIMOTO ,  Shiho NAKAMURA ,  Hideaki AOCHI ,  Tomoya SANUKI ,  Shinji MIYANO ,  Yoshihiro UEDA ,  Yuichi ITO ,  Yasuhito YOSHIMIZU

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first magnetic layer, and a first nonmagnetic layer. The first magnetic member includes a first extension portion and a third portion. The first extension portion extends along a first direction and includes a first portion and a second portion. The third portion is connected to the second portion. A direction from the first portion toward the second portion is aligned with the first direction. At least a portion of the third portion is tilted with respect to the first direction. The first nonmagnetic layer is provided between the first magnetic layer and the at least a portion of the third portion. The first nonmagnetic layer is provided along the at least a portion of the third portion and is tilted with respect to the first direction.

公开(公告)号：US20180268897A1

公开(公告)日：2018-09-20

申请号：US15694952

申请日：2017-09-04

Applicant: Toshiba Memory Corporation

Inventor： Yoshihiro UEDA

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C7/065 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1693 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0045 ,  G11C2013/0047 ,  G11C2013/0057 ,  G11C2013/0066 ,  G11C2013/0073 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2207/002

Abstract: A semiconductor memory device includes a resistive-type memory cell and a sense amplifier for reading data from the memory cell. First and second transistors connected in parallel between a first node connected to the memory cell and a second node connected to the sense amplifier. The first transistor has a size that is different from the second transistor. Each of the first and second transistors has a gate that is connected to a first voltage source. A switch circuit controls a conduction state between the first and second nodes via separate paths through the first transistor and the second transistor. The sense amplifier compares a first current supplied to the memory cell via the first path at a first timing and a second current supplied to the memory cell via the second path at a second timing different from the first timing.

公开(公告)号：US20210343356A1

公开(公告)日：2021-11-04

申请号：US17377247

申请日：2021-07-15

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yoshihiro UEDA ,  Shinji MIYANO

IPC: G11C19/08

Abstract: A magnetic storage device includes a magnetic body including first and second magnetic regions and a magnetic connection region that connects the first and second magnetic regions, and in which a plurality of magnetic domains each storing information by a magnetization direction thereof is formed, a read element that is electrically connected to the magnetic connection region and by which a magnetization direction of one of the magnetic domains is read, and a write element by which a magnetic domain having a magnetization direction is formed in the magnetic body according to information to be stored. The magnetic domains formed in each of the first and second magnetic regions are shifted in a predetermined direction in response to current that flows through the corresponding one of the first and second magnetic regions.

公开(公告)号：US20200294610A1

公开(公告)日：2020-09-17

申请号：US16562482

申请日：2019-09-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Marie TAKADA ,  Masanobu SHIRAKAWA ,  Yoshihiro UEDA ,  Naomi TAKEDA ,  Hideki YAMADA

IPC: G11C19/08 ,  G11C11/16 ,  G06F3/06

Abstract: According to one embodiment, a magnetic memory puts a first magnetic domain having a magnetization direction which is the same as or opposite to a magnetic domain of a first layer of a magnetic memory line, into the first layer, based on a value of data and the magnetization direction of the first layer. When receiving a first command, the magnetic memory puts a first additional magnetic domain and a second additional magnetic domain having a magnetization direction opposite to the first additional magnetic domain into the magnetic memory line. When receiving a second command, the magnetic memory read the first and second additional magnetic domains to determine the magnetization direction of the first magnetic domain.

公开(公告)号：US20190287598A1

公开(公告)日：2019-09-19

申请号：US16128554

申请日：2018-09-12

Applicant: Toshiba Memory Corporation

Inventor： Takuya SHIMADA ,  Yasuaki OOTERA ,  Tsuyoshi KONDO ,  Nobuyuki UMETSU ,  Michael Arnaud QUINSAT ,  Masaki KADO ,  Susumu HASHIMOTO ,  Shiho NAKAMURA ,  Hideaki AOCHI ,  Tomoya SANUKI ,  Shinji MIYANO ,  Yoshihiro UEDA ,  Yuichi ITO ,  Yasuhito YOSHIMIZU

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01F10/32

Abstract: According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.

公开(公告)号：US20190287593A1

公开(公告)日：2019-09-19

申请号：US16114162

申请日：2018-08-27

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yoshihiro UEDA

IPC: G11C11/16 ,  H01L43/08

Abstract: A magnetic storage device includes a magnetic storage thin line including a linear magnetic body having first and second magnetic domains whose magnetization directions are variable, a magnetoresistance effect element having a first resistance according to the magnetization direction of the first magnetic domain or a second resistance according to the magnetization direction of the second magnetic domain, and a read circuit that compares the first resistance of the magnetoresistance effect element with the second resistance of the magnetoresistance effect element. The read circuit outputs first data when the first resistance and the second resistance correspond to the same low or high resistance state and outputs second data when the first resistance and the second resistance correspond to different low/high resistance states.

公开(公告)号：US20190088305A1

公开(公告)日：2019-03-21

申请号：US15918304

申请日：2018-03-12

Applicant: Toshiba Memory Corporation

Inventor： Nobuyuki UMETSU ,  Tsuyoshi KONDO ,  Yasuaki OOTERA ,  Takuya SHIMADA ,  Michael Arnaud QUINSAT ,  Masaki KADO ,  Susumu HASHIMOTO ,  Shiho NAKAMURA ,  Tomoya SANUKI ,  Yoshihiro UEDA ,  Yuichi ITO ,  Shinji MIYANO ,  Hideeaki AOCHI ,  Yasuhito YOSHIMIZU

IPC: G11C11/16 ,  H01L27/22 ,  H01L23/528

Abstract: According to one embodiment, a magnetic memory device includes a magnetic portion, a first magnetic layer, a first nonmagnetic layer, a first element portion, first to third interconnects, and a controller. In a first operation, the controller sets the first interconnect to a first potential, the second interconnect to a second potential, and the third interconnect to a third potential. An absolute value of a difference between the second potential and the third potential is greater than that between the first potential and the third potential. In a second operation, the controller sets the first interconnect to a fourth potential, the second interconnect to a fifth potential, and the third interconnect to a sixth potential. An absolute value of a difference between the fifth potential and the sixth potential is less than that between the fourth potential and the sixth potential.

公开(公告)号：US20190088345A1

公开(公告)日：2019-03-21

申请号：US15918344

申请日：2018-03-12

Applicant: Toshiba Memory Corporation

Inventor： Michael Arnaud QUINSAT ,  Takuya SHIMADA ,  Susumu HASHIMOTO ,  Nobuyuki UMETSU ,  Yasuaki OOTERA ,  Masaki KADO ,  Tsuyoshi KONDO ,  Shiho NAKAMURA ,  Tomoya SANUKI ,  Yoshihiro UEDA ,  Yuichi ITO ,  Shinji MIYANO ,  Hideaki AOCHI ,  Yasuhito YOSHIMIZU

IPC: G11C19/08 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C19/0841 ,  G11C19/28 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.