Abstract:
The tunneling scanning microscope which is provided with a light source to irradiate a sample with light, particularly with light having one wavelength. The apparatus is used for the investigation of the surface structure of materials which have very low conductivity but increase their conductivities under light irradiation. In particular, the apparatus selectively provides an atomic image of an element of a compound in response to a selected wavelength.
Abstract:
The invention relates to a timepiece which has a resin bearing section. Moreover, the invention relates to a wheel train apparatus which has a resin bearing section. The invention is constituted by the timepiece provided with a gear wheel and supporting members which support the gear wheel, the supporting members being formed from a filler containing resin. Alternatively the invention is constituted by the wheel train apparatus provided with a gear wheel and supporting members which support the gear wheel, the supporting members being formed from a filler containing resin.
Abstract:
Plural elements forming a high frequency device in one chip are provided by forming a resistor element and the lower electrode of a capacitor element from one identical polycrystal silicon film over a substrate; forming the gate electrode of a power MISFET, upper electrode of the capacitor element, gate electrode of an n-channel type MISFET and gate electrode of a p-channel type MISFET from an identical polycrystal silicon film different from the other polycrystal silicon film and above and a WSi film; forming a capacitor element having a wiring formed on a silicon oxide film deposited over the substrate as a lower electrode and a wiring formed on the silicon oxide film as the upper electrode in the region MIN; forming a spiral coil in a region IND using an aluminum alloy film identical with that deposited on a silicon oxide film; and forming a bonding pad in a region PAD.
Abstract:
A charged particle generating method in which mode is changeable between an ion generation mode and an electron generation mode. In the ion generation mode, a raw material is supplied to a tip end of a charged particle generating electrode through a raw-material passage formed in the charged particle generating electrode. A first electric field, in which the charged particle generating electrode is positive and the charged particle extract electrode is negative, is generated to emit ions from the raw material at the charged particle generating electrode. In the electron generation mode, supplying the raw material from the raw-material supply section is stopped. A second electric field, in which the charged particle generating electrode is negative and the charged particle extract electrode is positive, is generated to emit electrons from the raw material at the charged particle generating electrode.
Abstract:
The MoSi2 heating element has not been so resistant under the low-temperature heating, because the low-temperature oxidation, which is attributable to the grain boundary oxidation, occurred. In the present invention, long life under the low-temperature heating is attained by the following two structures. (1) The MoSi2 grains have a network structure and are linked three dimensionally. (2) The secondary, silica-bearing oxide or glass phase forms a net-like structure around the MoSi2 grains.
Abstract:
An image forming apparatus which forms a halftone image on a print medium by using a multipass process to scan a printhead N (N is an integer of 2 or more) times in a single area on the print medium and form dots by each scan operation includes a pass division unit which sets the print density of a scan operation in the first pass so as to prevent dots from overlapping with each other on the print medium, and sets the print densities of scan operations in the second to Nth passes, a tone reduction unit which generates print data of the respective scan operations in accordance with the print densities set by the pass division unit, and a printhead which prints a halftone image on a print medium on the basis of the print data generated by the tone reduction unit.
Abstract:
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
Abstract:
The invention relates to a timepiece which has a resin substrate, rotors, and wheel trains, and relates to a wheel train apparatus which has a resin substrate, bearing members, gear wheel, and the like. The invention is constituted by a timepiece comprising; a gear wheel, and a substrate which supports a shaft of a rotor and/or a shaft of the gear wheel, the substrate being formed from a filled resin. Alternatively the invention is constituted by a wheel train apparatus comprising: a gear wheel; a substrate which supports one shaft section of the gear wheel, and a bridge which rotatably supports an other shaft section of the gear wheel, the substrate and the bridge being formed from a filled resin.
Abstract:
The invention relates to a timepiece which has a resin substrate, rotors, and wheel trains, and relates to a wheel train apparatus which has a resin substrate, bearing members, gear wheel, and the like. The invention is constituted by a timepiece comprising; a gear wheel, and a substrate which supports a shaft of a rotor and/or a shaft of the gear wheel, the substrate being formed from a filled resin. Alternatively the invention is constituted by a wheel train apparatus comprising: a gear wheel; a substrate which supports one shaft section of the gear wheel, and a bridge which rotatably supports an other shaft section of the gear wheel, the substrate and the bridge being formed from a filled resin.
Abstract:
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.