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公开(公告)号：US20120094420A1
公开(公告)日：2012-04-19
申请号：US13248675
申请日：2011-09-29
IPC分类号： H01L31/18
CPC分类号： H01L31/035209 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02645
摘要： A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.
摘要翻译： 将种子基板放置成面对形成衬底，然后引入含有硅的气体并进行化学气相沉积。 只要材料能够承受进行减压化学气相沉积的温度，对形成基板的材料的种类没有特别限制。 不包括种子原子的一组硅晶须可以直接在地层衬底上生长并与其接触。 此外，通过利用晶须组的表面特性，可以将具有一组晶须的基板施加到太阳能电池，锂离子二次电池等。
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2.发明申请METHOD FOR FORMING SILICON FILM AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE 审中-公开用于形成硅膜的方法和用于制造储能装置的方法公开(公告)号：US20130011550A1
公开(公告)日：2013-01-10
申请号：US13537294
申请日：2012-06-29
IPC分类号： C23C16/24
CPC分类号： C23C16/24 , C23C16/0281 , C23C16/56 , H01G11/30 , H01G11/50 , H01M4/134 , H01M4/386 , H01M10/0525 , Y02E60/13
摘要： A formation method of a silicon film which contributes to improvements in cycle characteristics and an increase in charge/discharge capacity and can be used as an active material layer is provided. In addition, a manufacturing method of a power storage device including the silicon film is provided. The formation method is as follows. A crystalline silicon film is formed over a conductive layer by an LPCVD method. The supply of a source gas is stopped and heat treatment is performed on the silicon film while the source gas is exhausted. The silicon film is grown to have whisker-like portions by an LPCVD method while the source gas is supplied into the reaction space. A power storage device is manufactured using, as an active material layer included in a negative electrode, the silicon film grown to have whisker-like portions.
摘要翻译： 提供有助于循环特性的改善和充电/放电容量增加的硅膜的形成方法，并且可以用作活性材料层。 此外，提供了包括硅膜的蓄电装置的制造方法。 形成方法如下。 通过LPCVD方法在导电层上形成晶体硅膜。 源气体的供给停止，并且在源气体排出时对硅膜进行热处理。 通过LPCVD方法将硅膜生长成具有晶须状部分，同时将源气体供应到反应空间中。 使用包括在负极中的活性物质层，制造出具有生长为具有晶须状部分的硅膜的蓄电装置。
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公开(公告)号：US20110124164A1
公开(公告)日：2011-05-26
申请号：US12949283
申请日：2010-11-18
申请人： Kosei NODA , Toshihiko TAKEUCHI , Makoto ISHIKAWA
发明人： Kosei NODA , Toshihiko TAKEUCHI , Makoto ISHIKAWA
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/268 , H01L21/84 , H01L29/0696 , H01L29/456 , H01L29/66681 , H01L29/7824 , H01L31/022425 , H01L31/02245 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An amorphous semiconductor layer is formed over a first single crystal semiconductor layer provided over a glass substrate or a plastic substrate with an insulating layer therebetween. The amorphous semiconductor layer is formed by a CVD method at a deposition temperature of higher than or equal to 100° C. and lower than or equal to 275° C. with use of a silane-based gas not diluted. Heat treatment is performed so that the amorphous semiconductor layer solid-phase epitaxially grows. In such a manner, an SOI substrate including a thick single crystal semiconductor layer is manufactured.
摘要翻译： 在设置在玻璃基板上的第一单晶半导体层或其间具有绝缘层的塑料基板上形成非晶半导体层。 使用未稀释的硅烷类气体，通过CVD法在高于或等于100℃且低于或等于275℃的沉积温度下形成非晶半导体层。 进行热处理，使得非晶半导体层固相外延生长。 以这种方式制造包括厚单晶半导体层的SOI衬底。
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公开(公告)号：US20110305950A1
公开(公告)日：2011-12-15
申请号：US13153503
申请日：2011-06-06
CPC分类号： H01G11/26 , H01M4/134 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M2004/025 , Y02E60/122 , Y02E60/13
摘要： An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
摘要翻译： 提供了一种用于蓄电装置的放电劣化少的电极和使用该电极的蓄电装置。 在蓄电装置用电极和蓄电装置中，在集电体上选择性地设置作为催化剂的金属元素的区域，形成活性物质层。 通过选择性地提供包括金属元素的区域，可以在集电体上的有源材料层中有效地产生晶须，并且可以控制晶须产生区域。 因此，可以提高放电容量，并且可以提高循环特性。
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公开(公告)号：US20130081505A1
公开(公告)日：2013-04-04
申请号：US13248179
申请日：2011-09-29
IPC分类号： F16C1/12
CPC分类号： B62M25/04 , B62M2025/003 , Y10T74/20043 , Y10T74/20287 , Y10T74/2042 , Y10T74/20438
摘要： A bicycle shifter is provided with a shifter housing, a winding member and an indicator unit. The winding member is movably coupled to the shifter housing. The indicator unit includes an indicating member and an adjustment member. The indicating member is operatively and adjustably connected to the winding member. The adjustment member adjusts a position of the indicating member relative to the winding member.
摘要翻译： 自行车换档器设置有换档器壳体，绕组构件和指示器单元。 卷绕构件可移动地联接到变速器壳体。 指示器单元包括指示构件和调节构件。 指示构件可操作地和可调节地连接到绕组构件。 调整构件调整指示构件相对于卷绕构件的位置。
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公开(公告)号：US20130052537A1
公开(公告)日：2013-02-28
申请号：US13596163
申请日：2012-08-28
CPC分类号： C23C26/00 , B82Y30/00 , C23C28/04 , H01M4/134 , H01M4/1395 , H01M4/364 , H01M4/366 , H01M4/386 , H01M4/483 , H01M4/62 , H01M4/625 , H01M2004/021
摘要： A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound.
摘要翻译： 一种蓄电装置，其特征在于，包括具有高周期性能的负极，其中由于充放电引起的劣化很小。 制造包括正极，负极和设置在正极和负极之间的电解质的蓄电装置，其中负极包括负极集电体和负极活性物质层，负极 电极活性物质层包括在负极集电体上形成的不均匀硅层，氧化硅层或包含氧化硅和硅酸盐化合物并与硅层接触的混合层，以及与氧化硅接触的石墨烯 层或包含氧化硅和硅酸盐化合物的混合层。
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公开(公告)号：US20120003530A1
公开(公告)日：2012-01-05
申请号：US13164839
申请日：2011-06-21
申请人： Kazutaka KURIKI , Michiko KONISHI , Asami TADOKORO , Yasunori YOSHIDA , Kiyofumi OGINO , Toshihiko TAKEUCHI
发明人： Kazutaka KURIKI , Michiko KONISHI , Asami TADOKORO , Yasunori YOSHIDA , Kiyofumi OGINO , Toshihiko TAKEUCHI
CPC分类号： H01L28/84 , H01G11/06 , H01G11/12 , H01G11/28 , H01G11/70 , H01G11/86 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/667 , H01M10/052 , Y02E60/13
摘要： It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.
摘要翻译： 其目的在于提高蓄电装置的性能，例如循环特性。 蓄电装置包括集电体和包含与集电体紧密接触形成的晶须的晶体半导体层。 通过增加粘附力来抑制结晶半导体层的分离，从而实现第十循环数相对于第一循环数的比容量大于或等于90％的循环特性。 此外，实现了相对于第一循环次数的第百次循环次数的比容量大于或等于70％的循环特性。
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公开(公告)号：US20140026710A1
公开(公告)日：2014-01-30
申请号：US13558862
申请日：2012-07-26
IPC分类号： F16B7/04
CPC分类号： B62K23/06 , B62K21/12 , F16B7/04 , F16B33/00 , F16M13/02 , Y10T74/20256 , Y10T74/20822
摘要： A bicycle handlebar clamp assembly has a handlebar clamp, a fixing nut, and a fixing bolt. The fixing nut includes a threaded bore having a bolt entrance opening and a bolt exit opening. The fixing nut defines a bolt shaft receiving space disposed adjacent the bolt exit opening. The fixing bolt includes a head and a shaft extending from the head. The shaft has a non-threaded portion disposed between two threaded portions. One of threaded portions is disposed closer to the head of the fixing bolt than the other threaded portion. The threaded portions are dimensioned to threadedly engage the threaded bore of the fixing nut. The non-threaded portion has a axial length that is greater than the axial length of the threaded bore of the fixing nut.
摘要翻译： 自行车车把夹具组件具有车把夹，固定螺母和固定螺栓。 固定螺母包括具有螺栓入口和螺栓出口的螺纹孔。 固定螺母限定了一个邻近螺栓出口开口设置的螺栓轴接纳空间。 固定螺栓包括头部和从头部延伸的轴。 轴具有设置在两个螺纹部分之间的非螺纹部分。 一个螺纹部分设置成比另一个螺纹部分更靠近固定螺栓的头部。 螺纹部分的尺寸设计成螺纹接合固定螺母的螺纹孔。 非螺纹部分的轴向长度大于固定螺母的螺纹孔的轴向长度。
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公开(公告)号：US20130316243A2
公开(公告)日：2013-11-28
申请号：US13596163
申请日：2012-08-28
申请人： Toshihiko TAKEUCHI , Minoru TAKAHASHI , Takeshi OSADA , Teppei OGUNI , Takuya HIROHASHI , Hiroyuki TOMISU
发明人： Toshihiko TAKEUCHI , Minoru TAKAHASHI , Takeshi OSADA , Teppei OGUNI , Takuya HIROHASHI , Hiroyuki TOMISU
CPC分类号： C23C26/00 , B82Y30/00 , C23C28/04 , H01M4/134 , H01M4/1395 , H01M4/364 , H01M4/366 , H01M4/386 , H01M4/483 , H01M4/62 , H01M4/625 , H01M2004/021
摘要： A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound.
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10.发明申请公开(公告)号：US20130045418A1
公开(公告)日：2013-02-21
申请号：US13586126
申请日：2012-08-15
申请人： Teppei OGUNI , Takeshi OSADA , Toshihiko TAKEUCHI
发明人： Teppei OGUNI , Takeshi OSADA , Toshihiko TAKEUCHI
CPC分类号： B82Y30/00 , C25D13/02 , C25D13/22 , H01M4/0416 , H01M4/0452 , H01M4/13 , H01M4/133 , H01M4/134 , H01M4/139 , H01M4/1393 , H01M4/1395 , H01M4/366 , H01M4/587 , H01M10/0525 , H01M2004/027
摘要： To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.
摘要翻译： 或者具有弯曲表面的物体，在具有不平坦表面或复杂表面的物体上，尤其是具有具有三维结构的表面的物体或具有弯曲表面的物体上形成实际上均匀厚度的石墨烯。 将物体和电极浸入氧化石墨烯溶液中，并且在物体和电极之间施加电压。 此时，物体用作阳极。 石墨烯氧化物由于带负电而被吸引到阳极上，沉积在物体的表面上以具有几乎均匀的厚度。 氧化石墨烯沉积的部分不可能用另一种氧化石墨烯涂覆。 因此，沉积的氧化石墨烯被还原为石墨烯，由此可以在具有复杂不平坦表面的物体上形成石墨烯以具有实际上均匀的厚度。
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