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    Metalannular gasket
    4.
    发明授权
    Metalannular gasket 有权
    金属衬垫

    公开(公告)号：US08955851B2

    公开(公告)日：2015-02-17

    申请号：US12312668

    申请日：2007-11-05

    申请人： Kenji Matsumoto ,  Kazuhiro Takahashi

    发明人： Kenji Matsumoto ,  Kazuhiro Takahashi

    IPC分类号： F16J15/10 ,  F16B43/00 ,  F16B41/00

    CPC分类号： F16B43/001 ,  F16B41/002 ,  F16J15/104 ,  Y10S277/937

    摘要： A metal annular gasket comprising an annular metal base plate; a compound layer integrally laminated on both surfaces of the annular metal base plate, the compound layer being made of synthetic resin or a rubber material mixed with a fiber material; and an annular seal layer having a circumferential covering portion which covers the inner circumferential edge of the annular metal plate and the inner circumferential edge of both compound layers, the compound layer being made of synthetic resin or a rubber material. The annular seal layer is formed such that the surface of the annular seal layer is so connected to the surfaces of the compound layer as to provide smooth transition in its thickness direction.

    摘要翻译： 一种金属环形垫片，包括环形金属基板; 在环状金属基板的两面一体层叠的复合层，由合成树脂制成的复合层或与纤维材料混合的橡胶材料; 以及环状密封层，其具有覆盖环状金属板的内周缘和两个复合层的内周边缘的周向覆盖部分，复合层由合成树脂或橡胶材料制成。 环形密封层形成为使得环形密封层的表面与化合物层的表面连接，以在其厚度方向上提供平滑的过渡。

    LENS MEMBER AND LIGHT-EMITTING DEVICE USING SAME
    6.
    发明申请
    LENS MEMBER AND LIGHT-EMITTING DEVICE USING SAME 有权
    使用相同的镜头部件和发光装置

    公开(公告)号：US20140204592A1

    公开(公告)日：2014-07-24

    申请号：US14237983

    申请日：2012-08-13

    申请人： Junji Miyashita ,  Yasuaki Kayanuma ,  Kenji Matsumoto

    发明人： Junji Miyashita ,  Yasuaki Kayanuma ,  Kenji Matsumoto

    IPC分类号： F21V5/04

    CPC分类号： F21V5/045 ,  F21K9/20 ,  F21K9/69 ,  F21S41/141 ,  F21S41/143 ,  F21S41/275 ,  F21S43/14 ,  F21S43/26 ,  F21S43/315 ,  F21V5/002 ,  F21V5/04 ,  F21V7/0091 ,  F21Y2115/10 ,  F24S23/31 ,  G02B3/08 ,  G02B5/1866 ,  G02B5/188 ,  G02B19/0028 ,  G02B19/0061

    摘要： A lens member includes a light-incident side; a light-exit side that is opposite to the light-incident side, a Fresnel lens arranged on a center axis that passes through a center of the light-incident side, and a diffraction grating structure arranged around a periphery of the Fresnel lens and having a center through which the center axis passes. Also, it is disclosed that the Fresnel lens may include a first Fresnel lens and a second Fresnel lens, the first Fresnel lens includes annular prisms that are divided from a convex lens and having a center through which the center axis of the light-incident side passes, and the second Fresnel lens includes annular prisms that are divided from a TIR lens and arranged around the periphery of the first Fresnel lens, centering around the center axis of the light-incident side.

    摘要翻译： 透镜构件包括光入射侧; 与光入射侧相反的光出射侧，配置在通过光入射侧的中心的中心轴上的菲涅耳透镜，以及绕着菲涅耳透镜的周围配置的衍射光栅结构，具有 中心轴通过的中心。 此外，公开了菲涅耳透镜可以包括第一菲涅尔透镜和第二菲涅尔透镜，第一菲涅耳透镜包括从凸透镜分离并具有中心的环形棱镜，光入射侧的中心轴穿过该中心 并且第二菲涅尔透镜包括从TIR透镜分割并围绕第一菲涅耳透镜的周围以围绕光入射侧的中心轴线为中心布置的环形棱镜。

    Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and storage medium
    8.
    发明授权
    Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and storage medium 有权
    制造半导体器件，半导体制造装置和存储介质的方法

    公开(公告)号：US08349725B2

    公开(公告)日：2013-01-08

    申请号：US12920701

    申请日：2009-02-20

    申请人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

    发明人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/67207 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/67253 ,  H01L21/67742 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76861 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess.

    摘要翻译： 本发明是一种制造半导体器件的方法，包括：在形成在衬底表面上的层间绝缘膜中形成凹部，所述凹部被构造成嵌入有主要由铜制成的上部导电沟道，以与下部电连接 导电通道; 提供含锰有机化合物的气体，形成由锰化合物制成的阻挡层，以防止铜向层间绝缘膜扩散，使得阻挡层覆盖层间绝缘膜的暴露表面; 在形成阻挡层之后，向阻挡层供给有机酸，以增加形成阻挡层的锰化合物中的锰的比例; 在供给有机酸之后，在阻挡层的表面上形成主要由铜制成的种子层; 在形成种子层之后，加热衬底以将锰从阻挡层的表面或阻挡层中分离出到种子层的表面上; 向种子层供应清洗液，以便通过加热去除种子层表面上分离的锰; 并且在供应清洁液之后，在凹槽中形成主要由铜制成的上导电通道。