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公开(公告)号：US20070264441A1
公开(公告)日：2007-11-15
申请号：US10589272
申请日：2005-02-15
申请人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
发明人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
CPC分类号： H01J37/32192 , H01J37/32238
摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.
摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。
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公开(公告)号：US08267040B2
公开(公告)日：2012-09-18
申请号：US10589272
申请日：2005-02-15
申请人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
发明人： Kiyotaka Ishibashi , Junichi Kitagawa , Singo Furui , Cai Zhong Tian , Jun Yamashita , Nobuhiko Yamamoto , Tetsuya Nishizuka , Toshihisa Nozawa , Shinya Nishimoto , Tamaki Yuasa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/32238
摘要： In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.
摘要翻译： 在通过供给微波产生的等离子体处理处理容器中的晶片的等离子体处理装置中，透光窗口在其下表面的中心区域具有由与材料相同的材料制成的悬挂部分 透光窗。 在悬挂部的外周面与从支撑部延续的侧壁内表面之间形成有间隙，间隙长度为0.5〜10mm，更优选为0.5〜5mm。 在接触点处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片的量也减少。
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公开(公告)号：USD563950S1
公开(公告)日：2008-03-11
申请号：US29281085
申请日：2007-06-14
申请人： Jun Yamashita , Tamaki Yuasa , Cai Zhong Tian
设计人： Jun Yamashita , Tamaki Yuasa , Cai Zhong Tian
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公开(公告)号：US20110024048A1
公开(公告)日：2011-02-03
申请号：US12935392
申请日：2009-03-31
IPC分类号： H01L21/306 , C23F1/08 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32091 , H01J37/32559 , H01J37/32633
摘要： In a plasma oxidation processing apparatus (100) which supplies a high-frequency bias power to an electrode (7) embedded in a stage (5), the interior surface, which is to be exposed to a plasma, of an aluminum lid (27) which functions as an opposite electrode for the stage (5) is coated with a silicon film (48) as a protective film. Positioned adjacent to the silicon film (48), an upper liner (49a) and a thicker lower liner (49b) are provided on the interior surfaces of a second container (3) and a first container (2). This prevents a short circuit or abnormal electrical discharge to the interior surfaces, making it possible to form a proper high-frequency current path and enhance the efficiency of power consumption.
摘要翻译： 在等离子体氧化处理装置（100）中，该等离子体氧化处理装置（100）向嵌入在载物台（5）中的电极（7）提供高频偏置功率，即将暴露于等离子体的铝表面（27） ）作为用于载物台（5）的相对电极，被涂覆有作为保护膜的硅膜（48）。 在第二容器（3）和第一容器（2）的内表面上设置有邻近硅膜（48）的上衬垫（49a）和较厚的下衬套（49b）。 这防止了内部表面的短路或异常放电，使得可以形成适当的高频电流路径并提高功耗的效率。
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公开(公告)号：US08852389B2
公开(公告)日：2014-10-07
申请号：US13233082
申请日：2011-09-15
申请人： Taichi Monden , Junichi Kitagawa , Jun Yamashita , Hideo Nakamura
发明人： Taichi Monden , Junichi Kitagawa , Jun Yamashita , Hideo Nakamura
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192
摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.
摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。
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公开(公告)号：US08882962B2
公开(公告)日：2014-11-11
申请号：US13075557
申请日：2011-03-30
申请人： Jun Yamashita , Kazuhiro Isa , Hideo Nakamura , Junichi Kitagawa
发明人： Jun Yamashita , Kazuhiro Isa , Hideo Nakamura , Junichi Kitagawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/44 , H01J37/32 , C23C16/509 , C23C16/455
CPC分类号： H01J37/32559 , C23C16/4404 , C23C16/45565 , C23C16/5096 , H01J37/32192
摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.
摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。
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公开(公告)号：US20120067845A1
公开(公告)日：2012-03-22
申请号：US13233082
申请日：2011-09-15
申请人： Taichi Monden , Junichi Kitagawa , Jun Yamashita , Hideo Nakamura
发明人： Taichi Monden , Junichi Kitagawa , Jun Yamashita , Hideo Nakamura
IPC分类号： H01L21/3065 , H01L21/306
CPC分类号： H01J37/32192
摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.
摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。
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公开(公告)号：US20100291319A1
公开(公告)日：2010-11-18
申请号：US12680645
申请日：2008-09-29
申请人： Jun Yamashita , Yoshiro Kabe , Junichi Kitagawa
发明人： Jun Yamashita , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： C23C16/511 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32495
摘要： A plasma processing apparatus for plasma-processing a target substrate is provided. The plasma processing apparatus includes a metallic processing container forming a processing space in which a plasma process is performed, and a substrate mounting table provided in the processing space to mount a target substrate thereon, a quartz member which shields a sidewall of the metallic processing container from the processing space and whose lower end extends to a position lower than a substrate mounting surface of the substrate mounting table, an annular member which is made of quartz and is provided between a bottom surface of the quartz member and a bottom wall of the metallic processing container to shield the bottom wall of the metallic processing container from the processing space, and a processing gas inlet part for introducing a processing gas into the processing space from a vicinity of an outer periphery of the substrate mounting table.
摘要翻译： 提供了一种用于等离子体处理目标衬底的等离子体处理装置。 等离子体处理装置包括形成进行等离子体处理的处理空间的金属处理容器和设置在处理空间中的用于将目标基板安装在其上的基板安装台，屏蔽金属处理容器的侧壁的石英构件 从所述处理空间的下端延伸到比所述基板安装台的基板安装面低的位置的环状部件，所述环状部件由石英制成，并且设置在所述石英部件的底面与所述金属 处理容器，用于将金属处理容器的底壁与处理空间隔离;以及处理气体入口部，用于将处理气体从基板安装台的外周附近引入处理空间。
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公开(公告)号：US20140056859A1
公开(公告)日：2014-02-27
申请号：US14009018
申请日：2013-03-30
CPC分类号： A61K35/34 , A61K9/70 , A61K35/44 , A61L27/3834 , A61L27/3886 , A61L27/54 , A61L2300/414 , A61L2430/20 , C12N5/0657 , C12N5/0697 , C12N2501/01 , C12N2501/04 , C12N2501/165 , C12N2502/1329 , C12N2502/1347 , C12N2502/28 , C12N2506/02 , A61K2300/00
摘要： The present invention provides a method for producing a myocardial sheet using a group of cells derived from embryonic stem cells. This method is characterized by mixing Flk/KDR positive cells, cardiomyocytes, endothelial cells, and mural cells, all derived from embryonic stem cells, and culturing the mixed cells. Furthermore, the myocardial sheet can be used as a therapeutic agent for heart diseases since VEGF is released from the sheet.
摘要翻译： 本发明提供使用源自胚胎干细胞的一组细胞产生心肌片的方法。 该方法的特征在于混合来自胚胎干细胞的Flk / KDR阳性细胞，心肌细胞，内皮细胞和壁细胞，并培养混合细胞。 此外，心肌片可用作心脏病的治疗剂，因为VEGF从片材中释放出来。
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公开(公告)号：US20120264923A1
公开(公告)日：2012-10-18
申请号：US13518932
申请日：2010-12-27
申请人： Yutaka Ikeda , Jun Yamashita , Ichiro Hijikuro , Satoshi Imuta , Yasuhiro HIroki , Takashi Takahashi
发明人： Yutaka Ikeda , Jun Yamashita , Ichiro Hijikuro , Satoshi Imuta , Yasuhiro HIroki , Takashi Takahashi
CPC分类号： A61K47/14 , A61K9/0019 , A61K9/0024 , A61K47/08 , A61K47/10 , A61K47/22 , A61K47/26 , C07H15/10 , C09K19/06
摘要： The present invention relates to a liquid crystal compound that can be used as a base for injection formulations. The present invention provides an amphipathic compound having the following general formula (I): wherein X and Y each denotes a hydrogen atom or together denote an oxygen atom, n denotes an integer from 0 to 2, m denotes the integer 1 or 2, and R denotes a hydrophilic group generated by removal of one hydroxyl group from any one selected from the group consisting of glycerol, erythritol, pentaerythritol, diglycerol, triglycerol, xylose, sorbitol, ascorbic acid, glucose, galactose, mannose, dipentaerythritol, maltose, mannitol, and xylitol; as well as a base for injection formulations and depot formulation comprising the same.
摘要翻译： 本发明涉及可用作注射制剂的基质的液晶化合物。 本发明提供具有以下通式（I）的两亲化合物：其中X和Y各自表示氢原子或一起表示氧原子，n表示0至2的整数，m表示整数1或2，并且 R表示通过从选自甘油，赤藓糖醇，季戊四醇，双甘油，三甘油，木糖，山梨醇，抗坏血酸，葡萄糖，半乳糖，甘露糖，二季戊四醇，麦芽糖，甘露糖醇，甘露糖醇， 和木糖醇; 以及用于注射制剂的基料和包含其的包含药剂的制剂。
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