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    Plasma processing apparatus
    1.
    发明申请
    Plasma processing apparatus 审中-公开
    等离子体处理装置

    公开(公告)号：US20070137575A1

    公开(公告)日：2007-06-21

    申请号：US10578184

    申请日：2004-11-02

    申请人： Tadahiro Ohmi ,  Toshihisa Nozawa ,  Osamu Morita ,  Tamaki Yuasa ,  Koji Kotani

    发明人： Tadahiro Ohmi ,  Toshihisa Nozawa ,  Osamu Morita ,  Tamaki Yuasa ,  Koji Kotani

    IPC分类号： C23F1/00 ,  C23C16/00

    CPC分类号： H01J37/32192 ,  C23C16/4411 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32724

    摘要： The present invention has an object of improving the cooling efficiency of the process gas supply part of a plasma processor and thereby suppressing an increase in the temperature of the process gas supply part. Therefore, used in the present invention is a plasma processor having a processing vessel having a holder holding a substrate to be processed, a microwave antenna provided on the processing vessel so as to oppose the substrate to be processed, and a processing gas supply part provided between the substrate to be processed on the holder and the microwave antenna so as to oppose the substrate to be processed, characterized in that the process gas supply part has multiple first openings through which plasma formed in the processing vessel passes, a process gas channel connectable to a process gas source, multiple second openings communicating with the process gas channel, and a cooling medium channel through which a cooling medium cooling the process gas supply part flows, wherein the cooling medium includes mist.

    摘要翻译： 本发明的目的是提高等离子体处理器的处理气体供给部的冷却效率，从而抑制处理气体供给部的温度上升。 因此，本发明中使用的是具有处理容器的等离子体处理容器，该处理容器具有保持待处理基板的保持器，设置在处理容器上的与要处理的基板相对的微波天线，以及设置有处理气体供给部 在待加工的基板与微波天线之间，以与待处理的基板相对，其特征在于，处理气体供给部具有多个第一开口，处理容器中形成的等离子体通过该第一开口，可连接的处理气体通道 处理气体源，与处理气体通道连通的多个第二开口以及冷却介质通道，冷却介质冷却工艺气体供应部分，冷却介质包括雾。

    Semiconductor integrated circuit switch matrix
    10.
    发明授权
    Semiconductor integrated circuit switch matrix 有权
    半导体集成电路开关矩阵

    公开(公告)号：US08551830B2

    公开(公告)日：2013-10-08

    申请号：US12110800

    申请日：2008-04-28

    申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

    发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

    摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

    摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。