公开(公告)号：US5096882A

公开(公告)日：1992-03-17

申请号：US178905

申请日：1988-04-07

申请人： Takahiko Kato ,  Katsuzo Aihara ,  Jiro Kuniya ,  Yutaka Misawa ,  Yoshihide Wadayama ,  Masahiro Ogihara ,  Toshikazu Nishino ,  Ushio Kawabe ,  Haruhiro Hasegawa ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Katsuki Miyauchi

发明人： Takahiko Kato ,  Katsuzo Aihara ,  Jiro Kuniya ,  Yutaka Misawa ,  Yoshihide Wadayama ,  Masahiro Ogihara ,  Toshikazu Nishino ,  Ushio Kawabe ,  Haruhiro Hasegawa ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Katsuki Miyauchi

IPC分类号： C01G3/00 ,  C01B13/14 ,  C01G1/00 ,  C04B35/00 ,  C04B35/45 ,  C04B41/80 ,  H01B12/00 ,  H01B13/00 ,  H01F6/06 ,  H01F41/04 ,  H01L39/12 ,  H01L39/14 ,  H01L39/24

CPC分类号： H01L39/2464 ,  H01F41/048 ,  H01F6/06 ,  H01L39/143 ,  H01L39/249 ,  H01L39/2496 ,  Y10S505/725 ,  Y10S505/73

摘要： A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.

公开(公告)号：US5316585A

公开(公告)日：1994-05-31

申请号：US560844

申请日：1990-07-24

申请人： Yukio Okamoto ,  Toshiyuki Aida ,  Katsuki Miyauchi ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Shinji Takayama

发明人： Yukio Okamoto ,  Toshiyuki Aida ,  Katsuki Miyauchi ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Shinji Takayama

IPC分类号： C23C4/10 ,  C23C14/00 ,  C23C14/08 ,  C23C14/32 ,  C23C16/40 ,  C23C16/517 ,  H01L39/24

CPC分类号： C23C14/0036 ,  C23C14/0031 ,  C23C14/087 ,  C23C14/32 ,  C23C16/408 ,  C23C16/517 ,  C23C4/11 ,  H01L39/2422 ,  H01L39/2445 ,  H01L39/2451 ,  Y10S505/73 ,  Y10S505/732 ,  Y10S505/786

摘要： Chemical reactions of superconducting raw materials with active oxygen atoms and their charged particles are accelerated by using at least oxygen plasma in the fabrication process of a superconductive body. Thereby an ionic crystal is grown in a short time, which provides stable superconducting materials of high quality such as high critical temperature and low resistivity. In another aspect, a substrate is irradiated simultaneously with streams of vapor of metal elements, of which a superconductive body is to be composed, and a stream of gas of ions generated in a plasma chamber and film growth is effected while keeping the substrate at a temperature higher than 400.degree. C. to produce a ceramic type superconductive thin film.

摘要翻译： 具有活性氧原子的超导原料及其带电粒子的化学反应通过在超导体的制造过程中至少使用氧等离子体来加速。 因此，离子晶体在短时间内生长，其提供高质量的稳定的超导材料，例如高临界温度和低电阻率。 在另一方面，一种衬底被同时照射要形成超导体的金属元素的蒸汽流，并且在将衬底保持在一个等离子体室的同时实现在等离子体室中产生的离子气流和膜生长 温度高于400℃，生成陶瓷型超导薄膜。

公开(公告)号：US4950642A

公开(公告)日：1990-08-21

申请号：US228750

申请日：1988-08-05

申请人： Yukio Okamoto ,  Toshiyuki Aida ,  Katsuki Miyauchi ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Shinji Takayama

发明人： Yukio Okamoto ,  Toshiyuki Aida ,  Katsuki Miyauchi ,  Kazumasa Takagi ,  Tokuumi Fukazawa ,  Shinji Takayama

IPC分类号： C23C4/10 ,  C23C14/00 ,  C23C14/08 ,  C23C14/32 ,  C23C16/40 ,  C23C16/517 ,  H01L39/24

CPC分类号： C23C14/0036 ,  C23C14/0031 ,  C23C14/087 ,  C23C14/32 ,  C23C16/408 ,  C23C16/517 ,  C23C4/11 ,  H01L39/2422 ,  H01L39/2445 ,  H01L39/2451 ,  Y10S505/73 ,  Y10S505/732 ,  Y10S505/786

摘要： A process for fabricating a superconducting oxide thin film is disclosed which comprises the steps of separately evaporating metal elements, of which the superconducting oxide thin film with a desired stoichiometry is to be composed, to a substrate and simultaneously irradiating the substrate with oxygen plasma generated by RF wave or ECR microwave to form a crystalline oxide film without further annealing.

公开(公告)号：US5077266A

公开(公告)日：1991-12-31

申请号：US405737

申请日：1989-09-11

申请人： Kazumasa Takagi ,  Tokuumi Fukazawa ,  Yoshimi Kawanami ,  Yuuichi Madokoro ,  Katsuki Miyauchi ,  Toshiyuki Aida ,  Yukio Honda ,  Masaaki Futamoto ,  Masahiko Hiratani

发明人： Kazumasa Takagi ,  Tokuumi Fukazawa ,  Yoshimi Kawanami ,  Yuuichi Madokoro ,  Katsuki Miyauchi ,  Toshiyuki Aida ,  Yukio Honda ,  Masaaki Futamoto ,  Masahiko Hiratani

IPC分类号： H01L39/22 ,  H01L39/24

CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/729 ,  Y10T29/41

摘要： A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.

公开(公告)号：US4390460A

公开(公告)日：1983-06-28

申请号：US306600

申请日：1981-09-28

申请人： Katsuki Miyauchi ,  Tetsu Oi ,  Tsuneo Suganuma

发明人： Katsuki Miyauchi ,  Tetsu Oi ,  Tsuneo Suganuma

IPC分类号： C03C3/062 ,  C03C3/097 ,  C03C4/14 ,  C03C4/18 ,  G02F1/15 ,  H01B1/06 ,  H01M6/18

CPC分类号： G02F1/1525 ,  C03C3/097 ,  C03C4/18 ,  H01M6/18 ,  H01M6/185

摘要： Disclosed is a lithium oxide based amorphous material having a composition included in a region defined by lines connecting points A, B, C and D in the composition diagram of the ternary system of Li.sub.2 O.SiO.sub.2.P.sub.2 O.sub.5 shown in FIG. 1 of the accompanying drawings. This amorphous material can be formed by performing sputtering by using as a target a mixture of a lithium silicate/lithium phosphate composition and LiO.sub.2. This amorphous material is excellent in the ionic conductivity.

摘要翻译： 公开了一种氧化锂基非晶材料，其组成包括在图3所示的Li 2 O·SiO 2·P 2 O 5的三元体系的组成图中由连接点A，B，C和D的线所限定的区域中。 附图1。 可以通过使用硅酸锂/磷酸锂组合物和LiO 2的混合物作为靶来进行溅射来形成该非晶材料。 该无定形材料的离子导电性优异。

公开(公告)号：US5035478A

公开(公告)日：1991-07-30

申请号：US567706

申请日：1990-08-14

申请人： Akira Ishikawa ,  Yukio Ito ,  Hiroshi Okamoto ,  Tetsuichi Kudo ,  Katsuki Miyauchi

发明人： Akira Ishikawa ,  Yukio Ito ,  Hiroshi Okamoto ,  Tetsuichi Kudo ,  Katsuki Miyauchi

IPC分类号： G02B6/12 ,  G02B1/00 ,  G02B6/132

CPC分类号： G02B6/132

摘要： A material for an optical component comprising polytungstic acid having peroxo groups, and an optical component, at least part of which is constituted of a thin film of the above-mentioned material. By using this material, a thin film of an inorganic material having an excellent stability is formed by the inexpensive wet painting method. An optical component using the above-mentioned thin film can be formed on an arbitrary substrate with high accuracy at a low temperature of about 100.degree. C. or below. The polytungstic acid may contain carbon as a heteroatom and/or may have Nb, Ti, V, Ta and/or Mo substituted for part of W.

摘要翻译： 用于包含具有过氧基团的多钨酸的光学部件的材料，以及光学部件，其至少一部分由上述材料的薄膜构成。 通过使用该材料，通过廉价的湿式涂布法形成具有优异的稳定性的无机材料的薄膜。 使用上述薄膜的光学部件可以在约100℃以下的低温下，在任意的基板上高精度地形成。 多钨酸可以含有碳作为杂原子和/或可以具有Nb，Ti，V，Ta和/或Mo取代部分W.

公开(公告)号：US4672586A

公开(公告)日：1987-06-09

申请号：US617919

申请日：1984-06-06

申请人： Katsuhiro Shimohigashi ,  Masaharu Kubo ,  Katsuki Miyauchi ,  Toshiaki Masuhara ,  Osamu Minato

发明人： Katsuhiro Shimohigashi ,  Masaharu Kubo ,  Katsuki Miyauchi ,  Toshiaki Masuhara ,  Osamu Minato

IPC分类号： G11C11/401 ,  G11C5/14 ,  G11C11/406 ,  G11C11/4072 ,  G11C11/4074 ,  H01L21/822 ,  H01L21/8247 ,  H01L27/04 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40

CPC分类号： G11C11/406 ,  G11C11/4072 ,  G11C11/4074 ,  G11C5/141

摘要： A semiconductor memory using a dynamic memory device, wherein a battery supplies a power source voltage and a substrate bias voltage when the memory is cut off from an external device, and a refresh control circuit changes in refresh timing of the memory device in accordance with the leakage current of the memory device. The power consumption of the memory can thus be reduced and the data can be kept for an extended period without an external power source.

公开(公告)号：US5151409A

公开(公告)日：1992-09-29

申请号：US469225

申请日：1990-01-24

申请人： Masahiko Hiratani ,  Shin'ichiro Saitoh ,  Katsuki Miyauchi ,  Tsuyoshi Seko

发明人： Masahiko Hiratani ,  Shin'ichiro Saitoh ,  Katsuki Miyauchi ,  Tsuyoshi Seko

IPC分类号： H01L39/10 ,  H01L39/22

CPC分类号： H01L39/126 ,  H01L39/225 ,  Y10S505/776 ,  Y10S505/779

摘要： A superconducting oxide composition comprising Ln-Th-Cu-O wherein Ln indicates at least one element selected from a group consisting of Pr, Nd, Pm, Sm, Eu, Gd and Er. A superconducting structure is formed in such a manner that at least an insulating layer is sandwiched between two superconductor layers but the superconductor layers are electrically coupled with each other, and a superconducting device including the superconducting structure is constructed so as to perform a switching operation for an electric signal, to detect a light signal, and to detect the intensity of a magnetic field. Another superconducting device is formed so that two superconductor layers are put in direct contact with each other, and a tunnel current between the superconductor layers can be controlled. Further, a superconductor structure is formed which includes a plurality of superconductor layers and has a superconducting transition temperature or superconducting critical current higher than that of each superconductor layer, and a superconducting device including this superconducting structure can operate at a relatively high temperature. Furthermore, a superconducting circuit device is formed which can emit a coherent electromagnetic wave having a wavelength of the order of 10 .mu.m on the basis of the difference in energy gap between adjacent superconductor layers. Additionally, novel oxide superconductor materials are disclosed.

公开(公告)号：US5061599A

公开(公告)日：1991-10-29

申请号：US462856

申请日：1990-01-05

申请人： Tetsuichi Kudo ,  Akira Ishikawa ,  Hiroshi Okamoto ,  Katsuki Miyauchi ,  Takao Iwayanagi ,  Fumio Murai ,  Shinji Okazaki

发明人： Tetsuichi Kudo ,  Akira Ishikawa ,  Hiroshi Okamoto ,  Katsuki Miyauchi ,  Takao Iwayanagi ,  Fumio Murai ,  Shinji Okazaki

IPC分类号： G03F7/004

CPC分类号： G03F7/0042

摘要： A radiation-sensitive material comprising a polyacid composed of tungsten and niobium, titanium and/or tantalum. A uniform film can be formed by an easy spin coating method. The polyacid has a radiation sensitivity higher than that of a polyacid comprising only tungsten.

摘要翻译： 一种辐射敏感材料，包括由钨和铌组成的多元酸，钛和/或钽。 可以通过简单的旋涂法形成均匀的膜。 多酸的辐射灵敏度高于仅含钨的多酸的辐射敏感性。

公开(公告)号：US4645726A

公开(公告)日：1987-02-24

申请号：US800432

申请日：1985-11-21

申请人： Masahiko Hiratani ,  Katsuki Miyauchi ,  Yukio Ito ,  Keiichi Kanehori ,  Fumiyoshi Kirino ,  Tetsuichi Kudo

发明人： Masahiko Hiratani ,  Katsuki Miyauchi ,  Yukio Ito ,  Keiichi Kanehori ,  Fumiyoshi Kirino ,  Tetsuichi Kudo

IPC分类号： H01M4/40 ,  H01M6/18

CPC分类号： H01M4/40 ,  H01M6/18

摘要： A compact, light-weight all solid state lithium battery is disclosed. The battery provides a good contact between a solid electrolyte and a Li anode by forming a Li alloy layer therebetween, even at the time of discharge at a large current density.

摘要翻译： 公开了一种紧凑，重量轻的全固态锂电池。 即使在大电流密度下放电时，电池通过在其间形成Li合金层而在固体电解质和Li阳极之间提供良好的接触。