摘要:
An object of the present invention is to provide an anti-inflammatory agent and an anti-inflammatory medical material, which have a good anti-inflammatory effect and high safety. The present invention relates to an anti-inflammatory agent and an anti-inflammatory medical material, which contain as an active ingredient a polyphosphoric acid that is particularly 1 type of liner phosphoric acid represented by a general formula Hn+2(PnO3n+1) (wherein n denotes an integer between 3 and 800) or a mixture of 2 or more types of such linear phosphoric acid.
摘要翻译:本发明的目的是提供具有良好的抗炎作用和高安全性的抗炎药和抗炎药物。 本发明涉及一种消炎药和抗炎药物,其含有作为活性成分的多磷酸,特别是1种由通式H n + 2表示的内衬磷酸, (其中n表示3和800之间的整数)或2种或更多种这种线型磷酸的混合物。
摘要:
A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.
摘要:
An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要:
A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.
摘要:
A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.
摘要:
To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.
摘要:
An automatic transmission includes a pressure adjusting unit that controls hydraulic pressure supplied to a transmission mechanism by the operation of a solenoid valve. A housing has a heat radiating portion for radiating heat to the outside and houses the pressure adjusting unit. A first connector is so arranged as to pass through the housing and has a control circuit unit electrically connected to the solenoid valve of the pressure adjusting unit. A second connector is electrically connected to an engine control unit outside the housing and engages with the first connector and the heat radiating portion. The second connector is electrically connected to the control circuit unit and presses the first connector onto the heat radiating portion.
摘要:
A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.
摘要:
An internal-voltage generating circuit includes a plurality of generating units connected in cascade, out of the plurality of generating units, a generating unit of relatively lower level is activated by an output of a generating unit of relatively higher level. According to the present invention, because the plural voltage generating units are connected in cascade, the voltage generating unit of lower level is not activated unless the voltage generating unit of higher level is activated. Therefore, at least the voltage generating unit of the second level and the subsequent voltage generating units consume very small power during the standby time. Consequently, total power consumption of the internal-voltage generating circuit can be reduced.
摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.