摘要:
The data processors of the present invention transfer the contents of address registers and program registers through an unused bus during the cycle of writing into registers and execute, in one cycle, a load instruction or a store instruction that requires address calculation, although the processors have two buses and one arithmetic/logic unit. Also, the data processors assign basic arithmetic instructions between registers and load/store instructions instruction codes having a basic instruction word length of one byte by functionally dividing general purpose-registers into four address registers and four data registers.
摘要:
A microprocessor is provided for supporting reduction of codes in size, wherein instructions are extended in units of 0.5 word from a basic one word code. A word of instruction, fetched from an external memory, is transferred to a decoding register via instruction buffers and a selector both operate in units of half words, then is decoded by a decoder. A storage unit stores a state of an instruction stored in an instruction buffer. A controlling unit controls the selector so that the instructions are transferred from instruction buffers to the decoding register in units of half words based on a direction from the decoder and the states stored in the storage unit.
摘要:
A microprocessor is provided for supporting reduction of codes in size, wherein instructions are extended in units of 0.5 word from a basic one word code. A word of instruction, fetched from an external memory, is transferred to a decoding register via instruction buffers and a selector both operate in units of half words, then is decoded by a decoder. A storage unit stores a state of an instruction stored in an instruction buffer. A controlling unit controls the selector so that the instructions are transferred from instruction buffers to the decoding register in units of half words based on a direction from the decoder and the states stored in the storage unit.
摘要:
Disclosed is a data processing apparatus comprising a decode device for decoding an instruction code including an operation code and two register designation codes and an instruction execution device for executing appropriate process according to the results decoded by the decode device, wherein the instruction execution device executes a first process when the two register designation codes are different from each other and executes a second process when they are equal.
摘要:
A microprocessor which reduces power consumption by monitoring the operating status of a plurality of operating units in the microprocessor to extract the unit which is recently most infrequently used to change the frequency of the operating clock supplied thereto in steps.
摘要:
An instruction fetching device includes one or both of a cache device and a branch history table. The cache device stores a plurality of pairs, each pair including an instruction string divided into minimum unit instructions and an address of the instruction string. At the time of reading an instruction, an instruction string is selected and output by every minimum unit instruction from at least two pairs. The branch history table stores a plurality of pairs, each pair including a branch destination address and a set of an address of a branch instruction and a value obtained by subtracting a given value from the address. At the time of reading an instruction, first, a pair having an address of a branch instruction which address is the nearest to a head address of an instruction string to be read out is selected from a plurality of pairs, each pair including an address of a branch instruction which address is in a predetermined address range including the instruction string to be read out, or each pair of the plurality of pairs including a value obtained by subtracting a given value from the address of the branch instruction. Then, a branch destination address is selected and output from the pair which is selected first from the plurality of pairs.
摘要:
A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.
摘要:
A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, a first transparent electrode formed on the second conductive type layer, a reflecting layer formed on the first transparent electrode, and including a smaller area than the first transparent electrode, a second transparent electrode formed on the first transparent electrode so as to cover the reflecting layer, and a pad electrode formed on the second transparent electrode and in a region above the reflecting layer.
摘要:
Sample A is produced by sequentially forming a first insulating film of SiO2 and a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO2, a reflective film, and a second insulating film of SiO2 on a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600° C. for three minutes. As shown in FIG. 1, in Al/Ag/Al where Al has a thickness of 1 Å to 30 Å, Ag/Al where Al has a thickness of 20 Å, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 Å, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.
摘要翻译:通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜和反射膜来制造样品A. 样品B通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜,反射膜和SiO 2的第二绝缘膜来制造。 在样品A和B中,在热处理前后在450nm的波长下测量反射膜的反射率。 在600℃下进行热处理3分钟。 如图所示。 如图1所示,在Al / Ag / Al中,其中Al具有厚度为的厚度为的Al / Ag / Al,Al的厚度为Al,Al / Ag / Al / Ag / Al,其中Al的厚度为 反射率为95%以上,即使在热处理后也等于或高于Ag。
摘要:
A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.