公开(公告)号：US20050023260A1

公开(公告)日：2005-02-03

申请号：US10846673

申请日：2004-05-17

申请人： Shinya Takyu ,  Tetsuya Kurosawa ,  Ninao Sato

发明人： Shinya Takyu ,  Tetsuya Kurosawa ,  Ninao Sato

IPC分类号： B23K26/38 ,  B23K26/40 ,  B28D5/00 ,  H01L21/00 ,  B23K26/14

CPC分类号： H01L21/67092 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

摘要： A semiconductor device manufacturing apparatus includes etching equipment, damage forming equipment, dividing equipment and removing equipment. The etching equipment etches a film formed on an element forming surface of a semiconductor wafer, thereby defining a dicing line or a chip-dividing line. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.

摘要翻译： 半导体器件制造装置包括蚀刻设备，损坏形成设备，分割设备和移除设备。 蚀刻设备蚀刻形成在半导体晶片的元件形成表面上的膜，从而限定切割线或切屑分割线。 损伤形成设备形成用作起点的损伤层，以将半导体晶片分成与元件形成表面相对的半导体晶片的背面侧上的分立半导体芯片。 分割设备将半导体晶片分为分立半导体芯片，其中损伤层用作起点。 去除设备将半导体晶片的后表面部分移至至少不存在损伤层的深度。

公开(公告)号：US06756562B1

公开(公告)日：2004-06-29

申请号：US10390900

申请日：2003-03-19

申请人： Tetsuya Kurosawa ,  Shinya Takyu ,  Ninao Sato

发明人： Tetsuya Kurosawa ,  Shinya Takyu ,  Ninao Sato

IPC分类号： B23K2638

CPC分类号： H01L21/6835 ,  B23K26/40 ,  B23K26/703 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/67092 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

摘要： A semiconductor device manufacturing apparatus includes a damage forming equipment, dividing equipment and removing equipment. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.

摘要翻译： 半导体器件制造装置包括损伤形成设备，分割设备和去除设备。 损伤形成设备形成用作起点的损伤层，以将半导体晶片分成与元件形成表面相对的半导体晶片的背面侧上的分立半导体芯片。 分割设备将半导体晶片分为分立半导体芯片，其中损伤层用作起点。 去除设备将半导体晶片的后表面部分移至至少不存在损伤层的深度。

公开(公告)号：US07135384B2

公开(公告)日：2006-11-14

申请号：US10787207

申请日：2004-02-27

申请人： Shinya Takyu ,  Ninao Sato

发明人： Shinya Takyu ,  Ninao Sato

IPC分类号： H01L21/46

CPC分类号： H01L21/78

摘要： A semiconductor element is formed in a semiconductor wafer, and a groove is formed by performing half-cut dicing on the semiconductor wafer along a dicing line. A dicing region of the semiconductor wafer is irradiated with a laser beam to melt or vaporize a cutting streak formed by dicing. An adhesive tape is adhered to the semiconductor element formation surface of the semiconductor wafer, and the other side of the semiconductor element formation surface is ground to at least a depth reaching the groove.

摘要翻译： 在半导体晶片中形成半导体元件，并且通过沿着切割线在半导体晶片上进行半切割切割形成凹槽。 用激光束照射半导体晶片的切割区域，以熔化或蒸发由切割形成的切割条纹。 将粘合带粘附到半导体晶片的半导体元件形成表面，并且将半导体元件形成表面的另一侧研磨到至少到达凹槽的深度。

公开(公告)号：US20110068480A1

公开(公告)日：2011-03-24

申请号：US12730007

申请日：2010-03-23

申请人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Junya Sagara ,  Shinya Takyu ,  Norihiro Togasaki ,  Tetsuya Kurosawa ,  Yukiko Kitajima

发明人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Junya Sagara ,  Shinya Takyu ,  Norihiro Togasaki ,  Tetsuya Kurosawa ,  Yukiko Kitajima

IPC分类号： H01L23/12 ,  C08K3/34 ,  C08L63/00 ,  C08K3/10

CPC分类号： C09J163/00 ,  C08K3/08 ,  C08K5/0091 ,  C08L63/00 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/732 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01088 ,  H01L2924/0665 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.

摘要翻译： 本发明提供一种半导体器件，其包括衬底，衬底上的第一半导体芯片，第一半导体芯片上的第二半导体芯片以及第一和第二半导体芯片之间的粘合片。 第二半导体芯片具有镜像背面，并且粘合片含有金属杂质离子捕获剂。

公开(公告)号：US07631680B2

公开(公告)日：2009-12-15

申请号：US10911511

申请日：2004-08-05

申请人： Tetsuya Kurosawa ,  Shinya Takyu

发明人： Tetsuya Kurosawa ,  Shinya Takyu

IPC分类号： B32B38/10 ,  H01L21/46

CPC分类号： H01L21/6835 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6839 ,  Y10T29/41 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1944

摘要： An adhesive tape peeling mechanism has an adhering section and a porous member. The adhering section adheres to a segmented semiconductor wafer bonded to adhesive tape. The porous member is provided on the surface adhering to the semiconductor wafer of the adhering section. The porous member is divided into at least two adhering areas in the direction in which the adhesive tape is peeled. The porous member adheres to the semiconductor wafer by suction and fixes the wafer in place.

摘要翻译： 胶带剥离机构具有粘接部和多孔部件。 粘合部分粘合到粘合到胶带上的分段半导体晶片。 多孔构件设置在粘附到粘合部的半导体晶片的表面上。 多孔构件沿着剥离胶带的方向分成至少两个粘合区域。 多孔构件通过抽吸粘附到半导体晶片上并将晶片固定就位。

公开(公告)号：US20050003636A1

公开(公告)日：2005-01-06

申请号：US10815934

申请日：2004-04-02

申请人： Shinya Takyu ,  Tetsuya Kurosawa ,  Kinya Mochida ,  Kenichi Watanabe

发明人： Shinya Takyu ,  Tetsuya Kurosawa ,  Kinya Mochida ,  Kenichi Watanabe

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/6835 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/6839 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/3512

摘要： A manufacturing method of a semiconductor device includes: providing a groove having a thickness equal to or larger than a finishing thickness on a first surface of a semiconductor wafer on which a semiconductor element is formed; affixing a PSA tape onto the first surface of the semiconductor wafer in which the groove is formed; reducing the thickness of the semiconductor wafer by processing a second surface opposite to the first surface of the semiconductor wafer onto which the PSA tape is affixed, so as to separate the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor element is formed; affixing an adhesive layer onto an entire rear surface of the separated semiconductor wafer; cutting the adhesive layer so as to separate the adhesive layer for each of the semiconductor chips; and peeling off the PSA tape from the semiconductor wafer while fixing the semiconductor wafer under suction by use of a porous member segmented into at least two sucking areas.

摘要翻译： 半导体器件的制造方法包括：在其上形成有半导体元件的半导体晶片的第一表面上设置具有等于或大于精加工厚度的厚度的凹槽; 将PSA胶带固定到形成有所述凹槽的所述半导体晶片的所述第一表面上; 通过处理与固定有PSA带的半导体晶片的第一表面相对的第二表面来减小半导体晶片的厚度，以将半导体晶片分离成形成半导体元件的多个半导体芯片; 将粘合剂层附着在所分离的半导体晶片的整个后表面上; 切割粘合剂层以分离每个半导体芯片的粘合剂层; 以及通过使用分段在至少两个吸引区域中的多孔构件将半导体晶片固定在吸力下，同时从半导体晶片剥离PSA带。

公开(公告)号：US06337258B1

公开(公告)日：2002-01-08

申请号：US09620709

申请日：2000-07-20

申请人： Hideo Nakayoshi ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Tetsuya Kurosawa

发明人： Hideo Nakayoshi ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Tetsuya Kurosawa

IPC分类号： H01L2146

CPC分类号： H01L21/3043 ,  H01L21/78 ,  H01L2224/32245 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83194 ,  H01L2924/01079 ,  H01L2924/01322

摘要： Grooves are formed in an element formation surface of a wafer along dicing lines or chip dividing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the element formation surface of the wafer. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. The chips are transferred while being held by porous adsorption.

摘要翻译： 沟槽沿着切割线或芯片分割线形成在晶片的元件形成表面中。 凹槽比成品芯片的厚度更深。 保持构件附接在晶片的元件形成表面上。 将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。 在通过多孔吸附保持时转移芯片。

公开(公告)号：US07294558B2

公开(公告)日：2007-11-13

申请号：US11072331

申请日：2005-03-07

申请人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

发明人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

IPC分类号： H01L21/30 ,  B26B7/10 ,  B26F3/00

CPC分类号： B28D5/0011 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/304 ,  H01L21/78 ,  Y10T83/041 ,  Y10T225/30

摘要： A starting point for cleavage made up of at least one of a groove and a through hole is formed on a chip dividing line or a dicing line along the cleaved surface of a wafer. Liquid matter is injected into the starting point. Then, the liquid matter is changed by applying an external factor that changes the liquid matter physically. Making use of the change, the wafer is cleaved so as to divide the wafer into semiconductor chips.

摘要翻译： 沿着切割面的芯片分割线或切割线形成由凹槽和通孔中的至少一个构成的切割的起始点。 将液体物质注入起点。 然后，通过施加物理地改变液体物质的外部因素来改变液体物质。 利用该变化，晶片被切割以将晶片分成半导体芯片。

公开(公告)号：US06774011B2

公开(公告)日：2004-08-10

申请号：US09920628

申请日：2001-08-03

申请人： Takahito Nakazawa ,  Tetsuya Kurosawa ,  Hideo Numata ,  Shinya Takyu

发明人： Takahito Nakazawa ,  Tetsuya Kurosawa ,  Hideo Numata ,  Shinya Takyu

IPC分类号： H01L2146

CPC分类号： H01L21/67276 ,  H01L21/67132 ,  H01L2221/68318

摘要： A pickup device comprises a thrusting mechanism, a carrying mechanism and a controller. The thrusting mechanism is configured to thrust the chips sequentially by using pins from a back side of the adhesive tape with the adhesive tape between the chips and the pins so as to peel the chips off the adhesive tape. The carrying mechanism is configured to sequentially absorb the chips with use of a collet, hold the chips to be absorbed until the chips are peeled off the adhesive tape, thereafter pick the chips up by ascending the collet in order to be carried the chips to a subsequent process stage. The controller is configured to controlling the thrust of the chip by thrusting mechanism, the controller control an ascend time and a descend time of the pins, and keeping a predetermined period of a time when the pins arrive at their peak.

摘要翻译： 拾取装置包括推压机构，承载机构和控制器。 推力机构构造成通过使用来自胶带的背面的销从而将芯片顺序地推出，并且将芯片与销之间的粘合带剥离，从而将芯片从胶带剥离。 携带机构被配置为使用夹头顺序地吸收芯片，保持待吸收的芯片直到芯片从胶带剥离，然后通过升高夹头来拾取芯片，以将芯片运送到 后续流程阶段。 控制器被配置为通过推压机构控制芯片的推力，控制器控制销的上升时间和下降时间，并且当销到达其峰值时保持预定的一段时间。

公开(公告)号：US08956917B2

公开(公告)日：2015-02-17

申请号：US13353826

申请日：2012-01-19

申请人： Tetsuya Kurosawa ,  Shinya Takyu ,  Akira Tomono

发明人： Tetsuya Kurosawa ,  Shinya Takyu ,  Akira Tomono

IPC分类号： H01L21/78 ,  H01L29/30 ,  H01L21/683

CPC分类号： H01L21/78 ,  H01L21/6836

摘要： According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.

摘要翻译： 根据一个实施例，公开了一种半导体器件的制造方法。 该方法包括：（a）在形成有半导体元件的半导体晶片的元件形成表面中形成切割槽; （b）在半导体晶片的元件形成表面上施加保护带; （c）研磨半导体晶片的后表面以使半导体晶片变薄，并将半导体晶片分成多个形成有半导体元件的半导体芯片; （d）在半导体晶片的后表面上形成粘合剂层; （e）分离和切割每个半导体芯片的粘合剂层; 和（f）去除保护胶带。 （e）通过在通过加热熔化或软化粘合剂层的同时向形成在半导体晶片的后表面上的粘合剂层喷射高压空气来进行。