Polyimide resin composition for semiconductor devices, method of forming film in semiconductor devices using the same and semiconductor devices
    1.
    发明授权
    Polyimide resin composition for semiconductor devices, method of forming film in semiconductor devices using the same and semiconductor devices 有权
    用于半导体器件的聚酰亚胺树脂组合物,使用其的半导体器件中形成膜的方法和半导体器件

    公开(公告)号:US08987376B2

    公开(公告)日:2015-03-24

    申请号:US13035536

    申请日:2011-02-25

    摘要: Disclosed is a polyimide composition for semiconductor devices, which has a rheological characteristics suited for screen printing and dispense coating, which has an improved wetting property with various coating bases, by which continuous printing of 500 times or more can be attained, with which blisters, cissing and pinholes are not generated after printing and drying or during drying or curing, which can coat a desired area. A method of forming a film in a semiconductor and semiconductors having the film formed by this method as an insulation film, protective film or the like are also disclosed. The composition for semiconductor devices contains a mixed solvent of a first organic solvent (A) and a second organic solvent (B); and a polyimide resin having at least one group selected from the group consisting of alkyl groups and perfluoroalkyl groups in recurring units, and having thixotropic property, the polyimide resin being dissolved in the mixed solvent.

    摘要翻译: 公开了一种半导体器件的聚酰亚胺组合物,其具有适用于丝网印刷和分配涂料的流变特性,其具有改善的各种涂层基底的润湿性能,通过该组合物可获得500次以上的连续印刷, 在印刷和干燥之后或在干燥或固化期间不产生可以涂覆所需区域的发丝和针孔。 还公开了一种在半导体中形成膜的方法以及通过该方法形成的膜作为绝缘膜,保护膜等的半导体。 半导体器件用组合物含有第一有机溶剂(A)和第二有机溶剂(B)的混合溶剂。 和具有至少一个选自重复单元中的烷基和全氟烷基的基团并且具有触变性的聚酰亚胺树脂,聚酰亚胺树脂溶解在混合溶剂中。

    POLYIMIDE RESIN COMPOSITION FOR SEMICONDUCTOR DEVICES, METHOD OF FORMING FILM IN SEMICONDUCTOR DEVICES USING THE SAME AND SEMICONDUCTOR DEVICES
    2.
    发明申请
    POLYIMIDE RESIN COMPOSITION FOR SEMICONDUCTOR DEVICES, METHOD OF FORMING FILM IN SEMICONDUCTOR DEVICES USING THE SAME AND SEMICONDUCTOR DEVICES 有权
    用于半导体器件的聚酰亚胺树脂组合物,使用其和半导体器件在半导体器件中形成膜的方法

    公开(公告)号:US20110213075A1

    公开(公告)日:2011-09-01

    申请号:US13035536

    申请日:2011-02-25

    IPC分类号: C08L79/08 C08L83/08 H01L21/56

    摘要: Disclosed is a polyimide composition for semiconductor devices, which has a rheological characteristics suited for screen printing and dispense coating, which has an improved wetting property with various coating bases, by which continuous printing of 500 times or more can be attained, with which blisters, cissing and pinholes are not generated after printing and drying or during drying or curing, which can coat a desired area. A method of forming a film in a semiconductor and semiconductors having the film formed by this method as an insulation film, protective film or the like are also disclosed. The composition for semiconductor devices contains a mixed solvent of a first organic solvent (A) and a second organic solvent (B); and a polyimide resin having at least one group selected from the group consisting of alkyl groups and perfluoroalkyl groups in recurring units, and having thixotropic property, the polyimide resin being dissolved in the mixed solvent.

    摘要翻译: 公开了一种半导体器件的聚酰亚胺组合物,其具有适用于丝网印刷和分配涂料的流变特性,其具有改善的各种涂层基底的润湿性能,通过该组合物可获得500次以上的连续印刷, 在印刷和干燥之后或在干燥或固化期间不产生可以涂覆所需区域的发丝和针孔。 还公开了一种在半导体中形成膜的方法以及通过该方法形成的膜作为绝缘膜,保护膜等的半导体。 半导体器件用组合物含有第一有机溶剂(A)和第二有机溶剂(B)的混合溶剂。 和具有至少一个选自重复单元中的烷基和全氟烷基的基团并且具有触变性的聚酰亚胺树脂,聚酰亚胺树脂溶解在混合溶剂中。

    Power converter
    3.
    发明授权
    Power converter 有权
    电源转换器

    公开(公告)号:US06351399B2

    公开(公告)日:2002-02-26

    申请号:US09794053

    申请日:2001-02-28

    IPC分类号: H02H7122

    CPC分类号: H02M1/08 H02M7/538 H02M7/5387

    摘要: To prevent malfunction or breakdown due to a surge voltage in a power converter for converting DC into AC or the like so as to supply electric power to a load, not only a control signal is transmitted via a level shift circuit which is provided correspondingly to each of switching semiconductor elements forming a main circuit and shifts a level of a reference potential at its output side so as to follow variations of a reference potential of the switching semiconductor element to the switching semiconductor element, but a DC control power source for supplying electric power to the level shift circuit and a negative pole of the switching semiconductor element are connected to each other through at least one of an inductor and a resistance.

    摘要翻译: 为了防止由于用于将DC转换成AC等的功率转换器中的浪涌电压的故障或故障,以便向负载提供电力,不仅通过电平移位电路发送控制信号,电平移位电路相应地被提供给每个 形成主电路的半导体元件的切换,并使其输出侧的基准电位的电平偏移,以使切换半导体元件的基准电位与开关用半导体元件的变化相对应,而用于供给电力的直流控制电源 并且通过电感器和电阻中的至少一个将开关半导体元件的负极连接到电平移位电路。

    Power module
    6.
    发明授权
    Power module 有权
    电源模块

    公开(公告)号:US06304448B1

    公开(公告)日:2001-10-16

    申请号:US09657236

    申请日:2000-09-07

    IPC分类号: H01K720

    摘要: Obtained is a power module which is excellent in electromagnetic shielding effects, is rarely influenced by external noises and acts as an external noise source with difficulty. An insulating substrate (5) is bonded through a solder (4) to a top surface of a heat sink (3) fixed to a support plate (2). A DC capacitor (16) is fixed to a bottom face of the heat sink (3) by adhesion. A control substrate (11) having a control IC (13) mounted thereon is fixed to the support plate (2). Moreover, a plurality of electrodes (10), a DC side electrode and refrigerant inlet-outlet (9) and a control connector (15) are provided on the support plate (2). A case (1) is fixed to a peripheral portion of the support plate (2), and surrounds the insulating substrate (5), the control substrate (11), the heat sink (3) and the DC capacitor 16 together with the support plate (2). Both the case (1) and the support plate (2) have conducting property.

    摘要翻译: 获得的是电磁屏蔽效果优异的电源模块,很少受到外部噪声的影响,作为外部噪声源的困难。 绝缘基板(5)通过焊料(4)接合到固定到支撑板(2)的散热器(3)的顶表面。 直流电容器(16)通过粘附固定在散热器(3)的底面上。 安装有控制IC(13)的控制基板(11)固定在支撑板(2)上。 此外,在支撑板(2)上设置有多个电极(10),DC侧电极和制冷剂入口出口(9)以及控制连接器(15)。 壳体(1)固定在支撑板(2)的周边部分,并与支撑体(1)一起包围绝缘基板(5),控制基板(11),散热片(3)和直流电容器16 板(2)。 壳体(1)和支撑板(2)都具有导电性能。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US4982261A

    公开(公告)日:1991-01-01

    申请号:US172271

    申请日:1988-03-23

    申请人: Ken Takanashi

    发明人: Ken Takanashi

    IPC分类号: H01L29/74 H01L29/747

    CPC分类号: H01L29/747

    摘要: Respective side ends (20s, 1s) of a T.sub.1 electrode (20) and a gate electrode (1) of a TRIAC (70) are mutually adjacent and located on a P.sub.1 layer (13). The side ends (20s, 1s) are connected electrically by a resistance area (13a) which is made of the same material as a semiconductor material used to make the P.sub.1 layer (13). A gate current branches into first and second branch currents (I.sub.GT1, I.sub.GT2). Because the second branch current does not contribute to the turn on of the TRIAC, undesirable (dv/dt) turn on is prevented.

    摘要翻译: T1电极(20)的相对侧端(20s,1s)和TRIAC(70)的栅电极(1)相互相邻并位于P1层(13)上。 侧端(20s,1s)由与用于制造P1层(13)的半导体材料相同的材料制成的电阻区域(13a)电连接。 栅极电流分支到第一和第二分支电流(IGT1,IGT2)。 因为第二分支电流对TRIAC的导通没有贡献,所以不能(dv / dt)导通被阻止。