公开(公告)号：US20120156835A1

公开(公告)日：2012-06-21

申请号：US13302176

申请日：2011-11-22

申请人： Toshiyuki ISA ,  Tomohiro KIMURA

发明人： Toshiyuki ISA ,  Tomohiro KIMURA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/32055 ,  H01L21/32137 ,  H01L29/04 ,  H01L29/66765

摘要： The amorphous silicon film is formed over the microcrystalline silicon film, and plasma treatment is performed on the amorphous silicon film in a mixed gas atmosphere of H2 and Ar at a pressure higher than 1000 Pa, so that etching is performed to expose the microcrystalline silicon film. In the etching, the etching rate of the amorphous silicon film and that of the microcrystalline silicon film is large.

摘要翻译： 在微晶硅膜上形成非晶硅膜，在H2和Ar的混合气体气氛中，在高于1000Pa的压力下，对非晶硅膜进行等离子体处理，进行蚀刻以使微晶硅膜露出 。 在蚀刻中，非晶硅膜和微晶硅膜的蚀刻速率大。

公开(公告)号：US20120299074A1

公开(公告)日：2012-11-29

申请号：US13477334

申请日：2012-05-22

申请人： Atsushi HIROSE ,  Hidekazu MIYAIRI ,  Yoshitaka YAMAMOTO ,  Tomohiro KIMURA

发明人： Atsushi HIROSE ,  Hidekazu MIYAIRI ,  Yoshitaka YAMAMOTO ,  Tomohiro KIMURA

IPC分类号： H01L27/06

CPC分类号： H01L29/78633 ,  H01L29/78648

摘要： A semiconductor device in which light leakage due to misalignment is prevented even when a black matrix layer is not expanded to a designed value or more is provided. In a semiconductor device including a dual-gate thin film transistor in which a semiconductor layer is sandwiched between a bottom gate electrode and a top gate electrode, the top gate electrode is formed of a first black matrix layer, and the top gate electrode overlaps with the semiconductor layer.

摘要翻译： 即使黑矩阵层不扩展到设计值以上，也能够防止由于未对准而导致的漏光的半导体装置。 在包括半导体层夹在底栅电极和顶栅电极之间的双栅极薄膜晶体管的半导体器件中，顶栅电极由第一黑矩阵层形成，顶栅电极与 半导体层。

公开(公告)号：US20120076220A1

公开(公告)日：2012-03-29

申请号：US13307470

申请日：2011-11-30

申请人： Tomohiro KIMURA ,  Yukihiro Omoto ,  Kenichi Mori

发明人： Tomohiro KIMURA ,  Yukihiro Omoto ,  Kenichi Mori

IPC分类号： H04L27/28

CPC分类号： H04L25/03343 ,  H04L25/03821 ,  H04L27/2615 ,  H04L2025/03414

摘要： Inter-carrier interference caused by frequency fluctuations, amplitude fluctuations, phase fluctuations, or the like is reduced without reducing a transmission efficiency. A receiving end has a canceling filter section that alleviates the inter-carrier interference caused by the frequency fluctuations, the amplitude fluctuations, the phase fluctuations, or the like through filtering processing. A transmitting end has a precoding section that facilitates determination of demodulation data in a vector demodulation section on the receiving end through precoding processing. Or, the receiving end has a trellis decoding section that decodes the demodulation data through trellis decoding processing.

摘要翻译： 在不降低传输效率的情况下，降低由频率波动，振幅波动，相位波动等引起的载波间干扰。 接收端具有通过滤波处理来缓和由频率波动，振幅波动，相位波动等引起的载波间干扰的抵消滤波器部。 发送端具有预编码部，其通过预编码处理有助于确定接收端的向量解调部中的解调数据。 或者，接收端具有网格解码部分，其通过网格解码处理对解调数据进行解码。

公开(公告)号：US20120299006A1

公开(公告)日：2012-11-29

申请号：US13477373

申请日：2012-05-22

申请人： Hidekazu MIYAIRI ,  Atsushi HIROSE ,  Yoshitaka YAMAMOTO ,  Tomohiro KIMURA

发明人： Hidekazu MIYAIRI ,  Atsushi HIROSE ,  Yoshitaka YAMAMOTO ,  Tomohiro KIMURA

IPC分类号： H01L27/06

CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/78633 ,  H01L29/78648

摘要： An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other.

摘要翻译： 目的是防止黑色矩阵层的宽度未扩大到设计值以上的情况下由于配准不良引起的漏光。 本发明的一个实施例是一种包括单栅极薄膜晶体管的半导体器件，其中第一半导体层夹在底栅电极和第一黑矩阵层之间。 第一半导体层和第一黑矩阵层彼此重叠。

公开(公告)号：US20120292988A1

公开(公告)日：2012-11-22

申请号：US13267059

申请日：2011-10-06

申请人： Mitsunori NISHIDA ,  Tomohiro KIMURA ,  Masahide FUJITA ,  Yuji ZUSHI

发明人： Mitsunori NISHIDA ,  Tomohiro KIMURA ,  Masahide FUJITA ,  Yuji ZUSHI

IPC分类号： B60L1/00

CPC分类号： B60R16/03 ,  G06F1/30 ,  G06F1/3293

摘要： A fourth constant-voltage power circuit directly powered from an on-vehicle battery is connected, in parallel through a serial resistor, to a second constant-voltage power circuit powered from the on-vehicle battery through an output contact of a power relay, and is connected to a drive power terminal of a microprocessor. When the output contact is closed, the microprocessor operates with an output voltage of the second constant-voltage power circuit, and an output current of the fourth constant-voltage power circuit is limited to less than or equal to a predetermined value by the serial resistor. During the operation stop at which a power switch is open, a micro standby current is supplied from the fourth constant-voltage power circuit to the microprocessor.

摘要翻译： 由车载电池直接供电的第四恒压电源电路通过串联电阻并联连接到由车载电池供电的第二恒压电源电路，通过功率继电器的输出触点，以及 连接到微处理器的驱动电源端子。 当输出触点闭合时，微处理器以第二恒压电源电路的输出电压工作，第四恒压电源电路的输出电流通过串联电阻器被限制在小于或等于预定值 。 在电源开关断开的操作停止期间，从第四恒压电源电路将微待机电流供给到微处理器。

公开(公告)号：US20120272082A1

公开(公告)日：2012-10-25

申请号：US13451731

申请日：2012-04-20

申请人： Tomohiro KIMURA

发明人： Tomohiro KIMURA

IPC分类号： G06F1/32

CPC分类号： G06F1/14 ,  G06F1/3206 ,  G06F1/3278 ,  G06F1/3293 ,  Y02D10/122 ,  Y02D10/157

摘要： A communication apparatus that is capable of enabling communication even when IPsec life time information is taken over. The communication apparatus is connected to a network via a network interface device and operates in a first power mode or a second power mode with less power consumption. A notification unit notifies the network interface device of IPsec life time information when shifting to the second power mode from the first power mode. A storage unit stores first time information showing time of shifting to the second power mode from the first power mode. An acquisition unit acquires the life time information from the network interface device when shifting to the first power mode from the second power mode. A correction unit corrects the life time information based on second time information showing time of shifting to the first power mode from the second power mode and the first time information.

摘要翻译： 即使在IPsec生命周期信息被接管时也能够进行通信的通信装置。 通信设备经由网络接口​​设备连接到网络，并以较少功耗的第一功率模式或第二功率模式工作。 当从第一功率模式切换到第二功率模式时，通知单元向网络接口设备通知IPsec寿命信息。 存储单元从第一功率模式存储表示从第二功率模式转换到第二功率模式的时间的第一时间信息。 从第二功率模式切换到第一功率模式时，采集单元从网络接口装置获取寿命信息。 校正单元根据表示从第二功率模式切换到第一功率模式的时间的第二时间信息和第一时间信息来校正寿命信息。

公开(公告)号：US20120219089A1

公开(公告)日：2012-08-30

申请号：US13406895

申请日：2012-02-28

申请人： Yutaka MURAKAMI ,  Tomohiro KIMURA ,  Mikihiro OUCHI

发明人： Yutaka MURAKAMI ,  Tomohiro KIMURA ,  Mikihiro OUCHI

IPC分类号： H04L25/49

CPC分类号： H04B7/0456 ,  H04L1/005 ,  H04L1/0643 ,  H04L5/0023 ,  H04L5/0048 ,  H04L25/0204 ,  H04L25/0222 ,  H04L25/0242 ,  H04L25/03942 ,  H04L25/067 ,  H04L27/2604

摘要： All data symbols used in data transmission of a modulated signal are precoded by switching between precoding matrices so that the precoding matrix used to precode each data symbol and the precoding matrices used to precode data symbols that are adjacent to the data symbol along the frequency axis and the time axis all differ. A modulated signal with such data symbols arranged therein is transmitted.

摘要翻译： 在调制信号的数据传输中使用的所有数据符号通过在预编码矩阵之间切换进行预编码，使得用于对每个数据符号进行预编码的预编码矩阵和用于预编码沿频率轴与数据符号相邻的数据符号的预编码矩阵，以及 时间轴全部不同。 发送其中布置有这样的数据符号的调制信号。

公开(公告)号：US20120121034A1

公开(公告)日：2012-05-17

申请号：US13295431

申请日：2011-11-14

申请人： Yutaka MURAKAMI ,  Tomohiro KIMURA ,  Mikihiro OUCHI

发明人： Yutaka MURAKAMI ,  Tomohiro KIMURA ,  Mikihiro OUCHI

IPC分类号： H04L27/00

CPC分类号： H04B7/0482 ,  H04B7/0413 ,  H04B7/0456 ,  H04B7/0617 ,  H04B7/0871 ,  H04L1/0003 ,  H04L1/0014 ,  H04L25/03171 ,  H04L25/03343 ,  H04L27/3405 ,  H04L2025/03426 ,  H04L2025/03808 ,  H04W72/0413 ,  H04W72/042 ,  H04W72/044

摘要： All data symbols used in data transmission of a modulated signal are precoded by hopping between precoding matrices so that the precoding matrix used to precode each data symbol and the precoding matrices used to precode data symbols that are adjacent to the data symbol in the frequency domain and the time domain all differ. A modulated signal with such data symbols arranged therein is transmitted.

摘要翻译： 在调制信号的数据传输中使用的所有数据符号通过预编码矩阵之间的跳变进行预编码，使得用于预编码每个数据符号的预编码矩阵和用于预编码与频域中的数据符号相邻的数据符号的预编码矩阵，以及 时域完全不同 发送其中布置有这样的数据符号的调制信号。

公开(公告)号：US20120300877A1

公开(公告)日：2012-11-29

申请号：US13478634

申请日：2012-05-23

申请人： Yutaka MURAKAMI ,  Tomohiro KIMURA ,  Mikihiro OUCHI

发明人： Yutaka MURAKAMI ,  Tomohiro KIMURA ,  Mikihiro OUCHI

IPC分类号： H04L25/49

CPC分类号： H04B7/0456 ,  H04L1/0045 ,  H04L1/0075 ,  H04L25/03942 ,  H04L25/03955

摘要： A transmission scheme for transmitting a first modulated signal and a second modulated signal in the same frequency at the same time. According to the transmission scheme, a precoding weight multiplying unit multiplies a precoding weight by a baseband signal after a first mapping and a baseband signal after a second mapping and outputs the first modulated signal and the second modulated signal. In the precoding weight multiplying unit, precoding weights are regularly hopped.

摘要翻译： 一种用于同时发送相同频率的第一调制信号和第二调制信号的传输方案。 根据传输方案，预编码权重乘法单元在第一映射之后将预编码权重乘以基带信号和在第二映射之后将基带信号相乘，并输出第一调制信号和第二调制信号。 在预编码权重乘法单元中，规则地跳跃预编码权重。

公开(公告)号：US20120298999A1

公开(公告)日：2012-11-29

申请号：US13477353

申请日：2012-05-22

申请人： Yasuhiro JINBO ,  Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Tomohiro KIMURA ,  Yoshitaka YAMAMOTO

发明人： Yasuhiro JINBO ,  Koji DAIRIKI ,  Hidekazu MIYAIRI ,  Tomohiro KIMURA ,  Yoshitaka YAMAMOTO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/04 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78678

摘要： An object is to reduce off-state leakage current between a source electrode and a drain electrode. One embodiment of the present invention is a semiconductor device including a gate electrode, gate insulating films and formed to cover the gate electrode, an active layer formed over the gate insulating films and located above the gate electrode, silicon layers and formed over side surfaces of the active layer and the gate insulating films, and a source electrode and a drain electrode formed over the silicon layers. The active layer is not in contact with each of the source electrode and the drain electrode.

摘要翻译： 目的是减少源极和漏电极之间的截止状态漏电流。 本发明的一个实施例是一种半导体器件，包括栅电极和栅极绝缘膜，形成为覆盖栅电极，形成在栅极绝缘膜上并位于栅电极上方的有源层，硅层并形成在 有源层和栅极绝缘膜，以及形成在硅层上的源电极和漏电极。 有源层不与源电极和漏电极中的每一个接触。