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公开(公告)号：US10388536B2
公开(公告)日：2019-08-20
申请号：US15527622
申请日：2015-11-17
发明人： Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami , Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma
IPC分类号： H01L21/306 , H01L21/67 , C30B29/36 , C30B33/12 , H01L21/302 , C30B35/00
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
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公开(公告)号：US20170345672A1
公开(公告)日：2017-11-30
申请号：US15527526
申请日：2015-11-17
发明人： Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma , Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami
IPC分类号： H01L21/306 , H01L21/04 , C30B33/12 , H01L21/304 , C30B29/36
CPC分类号： H01L21/30621 , C30B29/36 , C30B33/12 , H01L21/0445 , H01L21/302 , H01L21/304
摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
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公开(公告)号：US10665465B2
公开(公告)日：2020-05-26
申请号：US15527526
申请日：2015-11-17
发明人： Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma , Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami
IPC分类号： H01L21/306 , C30B29/36 , C30B33/12 , H01L21/302 , H01L21/04 , H01L21/304
摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
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公开(公告)号：US20170323797A1
公开(公告)日：2017-11-09
申请号：US15527622
申请日：2015-11-17
发明人： Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami , Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma
IPC分类号： H01L21/306 , H01L21/67
CPC分类号： H01L21/30604 , C30B29/36 , C30B33/12 , C30B35/002 , H01L21/302 , H01L21/67063
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
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公开(公告)号：US20170323792A1
公开(公告)日：2017-11-09
申请号：US15527602
申请日：2015-11-17
申请人： Toyo Tanso Co., Ltd.
发明人： Norihito Yabuki , Satoshi Torimi , Satoru Nogami
IPC分类号： H01L21/04 , H01L21/306
CPC分类号： H01L21/046 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/3247 , H01L21/67115 , H01L21/67346 , H01L21/7602 , H01L29/1608 , H01L29/66068 , H01L29/7813
摘要： Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.
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6.发明申请公开(公告)号：US20170114475A1
公开(公告)日：2017-04-27
申请号：US15300597
申请日：2015-03-10
申请人： TOYO TANSO CO., LTD.
发明人： Norihito Yabuki , Satoshi Torimi , Satoru Nogami
CPC分类号： C30B19/12 , C30B19/04 , C30B29/36 , C30B33/12 , H01L21/02019 , H01L21/02378 , H01L21/02529 , H01L21/02658 , H01L21/302 , H01L21/3065 , H01L21/3247 , H01L21/67069 , H01L21/67109 , H01L21/67115 , H01L29/1608
摘要： Provided is a method in which the rate of growth is lowered even when a cut SiC seed crystal is used in performing MSE process. A SiC seed crystal that is used as a seed crystal in metastable solvent epitaxy process (MSE process) is heated under Si atmosphere and the surface of the SiC seed crystal is etched to remove a work-affected layer that was formed by cutting. Work-affected layers generated on SiC seed crystals are known to inhibit growth during MSE process, and therefore removing the work-affected layers can prevent lowering of the rate of growth.
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公开(公告)号：US10522386B2
公开(公告)日：2019-12-31
申请号：US15321421
申请日：2015-06-01
申请人： TOYO TANSO CO., LTD.
发明人： Masato Shinohara , Yoshihisa Abe , Satoru Nogami
IPC分类号： B23Q3/00 , H01L21/687 , C23C16/04 , C23C16/458 , C23C16/56 , H01L21/205 , C23C8/20 , C23C16/06 , C23C16/32 , C30B25/12
摘要： Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).
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公开(公告)号：US20170162425A1
公开(公告)日：2017-06-08
申请号：US15321421
申请日：2015-06-01
申请人： TOYO TANSO CO., LTD.
发明人： Masato Shinohara , Yoshihisa Abe , Satoru Nogami
摘要： Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).
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公开(公告)号：US09644894B2
公开(公告)日：2017-05-09
申请号：US14468524
申请日：2014-08-26
申请人： TOYO TANSO CO., LTD.
发明人： Satoshi Torimi , Norihito Yabuki , Satoru Nogami
IPC分类号： H01L21/02 , F27D11/00 , H01L21/67 , F27D7/06 , H01L21/673 , F27B17/00 , F27D5/00 , F27D11/02
CPC分类号： F27D11/00 , F27B17/0025 , F27D5/0037 , F27D7/06 , F27D11/02 , F27D2005/0081 , F27D2007/063 , H01L21/67069 , H01L21/67109 , H01L21/67346 , H01L21/67386
摘要： Provided is a heat treatment container having a small size and capable of efficiently performing a heat treatment on a SiC substrate. A heat treatment container is a container for a heat treatment on a SiC substrate 40 under Si vapor pressure. The SiC substrate 40 is made of, at least in a surface thereof, single crystal SiC. The heat treatment container includes a container part 30 and a substrate holder 50. The container part 30 includes an internal space 33 in which Si vapor pressure is caused. The internal space 33 is partially open. The substrate holder 50 is able to support the SiC substrate 40. When the substrate holder 50 supports the SiC substrate 40, an open portion of the container part 30 is covered so that the internal space 33 is hermetically sealed.
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10.发明申请SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SINGLE CRYSTAL SiC SUBSTRATE 有权单晶SiC衬底和单晶SiC衬底的表面处理方法公开(公告)号：US20150294867A1
公开(公告)日：2015-10-15
申请号：US14435383
申请日：2013-11-15
申请人： TOYO TANSO CO., LTD.
发明人： Satoshi Torimi , Norihito Yabuki , Satoru Nogami
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/22 , C30B33/02 , C30B33/08 , C30B33/12 , H01L21/3065 , H01L29/1608
摘要： The present application aims to provide a surface treatment method that is able to accurately control the rate of etching a single crystal SiC substrate and thereby enables correct understanding of the amount of etching. In the surface treatment method, the single crystal SiC substrate is etched by a heat treatment performed under Si vapor pressure. At a time of the etching, inert gas pressure in an atmosphere around the single crystal SiC substrate is adjusted to control the rate of etching. Accordingly, correct understanding of the amount of etching is obtained.
摘要翻译： 本申请旨在提供一种能够精确地控制单晶SiC衬底的蚀刻速率从而能够正确理解蚀刻量的表面处理方法。 在表面处理方法中，通过在Si蒸气压下进行的热处理蚀刻单晶SiC衬底。 在蚀刻时，调整在单晶SiC衬底周围的气氛中的惰性气体压力以控制蚀刻速率。 因此，获得对蚀刻量的正确理解。
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