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公开(公告)号：US10388536B2
公开(公告)日：2019-08-20
申请号：US15527622
申请日：2015-11-17
发明人： Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami , Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma
IPC分类号： H01L21/306 , H01L21/67 , C30B29/36 , C30B33/12 , H01L21/302 , C30B35/00
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
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公开(公告)号：US20170345672A1
公开(公告)日：2017-11-30
申请号：US15527526
申请日：2015-11-17
发明人： Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma , Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami
IPC分类号： H01L21/306 , H01L21/04 , C30B33/12 , H01L21/304 , C30B29/36
CPC分类号： H01L21/30621 , C30B29/36 , C30B33/12 , H01L21/0445 , H01L21/302 , H01L21/304
摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
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公开(公告)号：US10665465B2
公开(公告)日：2020-05-26
申请号：US15527526
申请日：2015-11-17
发明人： Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma , Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami
IPC分类号： H01L21/306 , C30B29/36 , C30B33/12 , H01L21/302 , H01L21/04 , H01L21/304
摘要： Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating the SiC substrate (40) under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (40), so that a surface pattern of the SiC substrate (40) after etching treatment is controlled.
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公开(公告)号：US20170323797A1
公开(公告)日：2017-11-09
申请号：US15527622
申请日：2015-11-17
发明人： Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami , Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma
IPC分类号： H01L21/306 , H01L21/67
CPC分类号： H01L21/30604 , C30B29/36 , C30B33/12 , C30B35/002 , H01L21/302 , H01L21/67063
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.
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公开(公告)号：US20180301359A1
公开(公告)日：2018-10-18
申请号：US15766191
申请日：2016-10-06
申请人： Toyo Tanso Co., Ltd.
IPC分类号： H01L21/67 , H01L21/3065 , H01L21/04 , H01L21/687
摘要： A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).
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公开(公告)号：US11261539B2
公开(公告)日：2022-03-01
申请号：US16495282
申请日：2018-03-20
申请人： Toyo Tanso Co., Ltd.
发明人： Satoshi Torimi , Yusuke Sudo , Masato Shinohara , Youji Teramoto , Takuya Sakaguchi , Satoru Nogami , Makoto Kitabatake
摘要： In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.
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公开(公告)号：US10522386B2
公开(公告)日：2019-12-31
申请号：US15321421
申请日：2015-06-01
申请人： TOYO TANSO CO., LTD.
发明人： Masato Shinohara , Yoshihisa Abe , Satoru Nogami
IPC分类号： B23Q3/00 , H01L21/687 , C23C16/04 , C23C16/458 , C23C16/56 , H01L21/205 , C23C8/20 , C23C16/06 , C23C16/32 , C30B25/12
摘要： Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).
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公开(公告)号：US20170162425A1
公开(公告)日：2017-06-08
申请号：US15321421
申请日：2015-06-01
申请人： TOYO TANSO CO., LTD.
发明人： Masato Shinohara , Yoshihisa Abe , Satoru Nogami
摘要： Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).
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公开(公告)号：US20150321966A1
公开(公告)日：2015-11-12
申请号：US14652210
申请日：2014-01-28
申请人： TOYO TANSO CO., LTD.
发明人： Masato Shinohara
CPC分类号： C04B41/89 , C04B35/522 , C04B41/00 , C04B41/009 , C04B41/4529 , C04B41/5059 , C04B41/5061 , C04B41/52 , C04B41/53 , C23C16/4581 , C30B29/36 , C30B35/00 , H01L21/683 , H01L21/68757 , Y10T428/24612 , Y10T428/265 , Y10T428/30 , C04B41/4531 , C04B41/4519 , C04B41/5001 , C04B41/5346 , C04B41/455 , C04B41/5057
摘要： Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.
摘要翻译： 提供了具有优异的耐久性的碳化硅 - 碳化钽复合材料。 碳化硅 - 碳化钽复合材料（1）包括：其表面层至少部分地由第一碳化硅层（12）形成的主体（10）; 碳化钽层（20）; 和第二碳化硅层（13）。 碳化钽层（20）设置在第一碳化硅层（12）的上方。 第二碳化硅层（13）介于碳化钽层（20）和第一碳化硅层（12）之间。 通过X射线光电子能谱测定，第二碳化硅层（13）的C / Si组成比不小于1.2。 通过拉曼光谱测定，第二碳化硅层（13）的G带和D带之间的峰值强度比G / D不小于1.0。
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公开(公告)号：US09764992B2
公开(公告)日：2017-09-19
申请号：US14652210
申请日：2014-01-28
申请人： TOYO TANSO CO., LTD.
发明人： Masato Shinohara
IPC分类号： C04B41/89 , C04B35/52 , C04B41/50 , C30B29/36 , C04B41/52 , C30B35/00 , H01L21/687 , C23C16/458 , H01L21/683 , C04B41/00 , C04B41/45 , C04B41/53
CPC分类号： C04B41/89 , C04B35/522 , C04B41/00 , C04B41/009 , C04B41/4529 , C04B41/5059 , C04B41/5061 , C04B41/52 , C04B41/53 , C23C16/4581 , C30B29/36 , C30B35/00 , H01L21/683 , H01L21/68757 , Y10T428/24612 , Y10T428/265 , Y10T428/30 , C04B41/4531 , C04B41/4519 , C04B41/5001 , C04B41/5346 , C04B41/455 , C04B41/5057
摘要： Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.
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