公开(公告)号：US20130017683A1

公开(公告)日：2013-01-17

申请号：US13543018

申请日：2012-07-06

申请人： Tsubasa HONKE ,  Shin HARADA ,  Kyoko OKITA

发明人： Tsubasa HONKE ,  Shin HARADA ,  Kyoko OKITA

IPC分类号： H01L21/316 ,  H01L21/311

CPC分类号： H01L29/7802 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/045 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide substrate is prepared. By exposing the silicon carbide substrate to an atmosphere having a nitrogen dioxide concentration greater than or equal to 2 μg/m3, an oxide film is formed on the silicon carbide substrate.

摘要翻译： 制备碳化硅衬底。 通过将碳化硅衬底暴露于二氧化氮浓度大于或等于2μg/ m 3的气氛中，在碳化硅衬底上形成氧化物膜。

公开(公告)号：US20120161155A1

公开(公告)日：2012-06-28

申请号：US13334855

申请日：2011-12-22

申请人： Shin HARADA ,  Tsubasa Honke

发明人： Shin HARADA ,  Tsubasa Honke

IPC分类号： H01L29/24 ,  C30B23/02 ,  H01L21/66

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  G01N21/6489 ,  H01L22/12 ,  H01L22/20 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A main surface of a silicon carbide substrate is inclined by an off angle in an off direction from {0001} plane of a hexagonal crystal. The main surface has such a characteristic that, among emitting regions emitting photoluminescent light having a wavelength exceeding 650 nm of the main surface caused by excitation light having higher energy than band-gap of the hexagonal silicon carbide, the number of those having a dimension of at most 15 μm in a direction perpendicular to the off direction and a dimension in a direction parallel to the off direction not larger than a value obtained by dividing penetration length of the excitation light in the hexagonal silicon carbide by a tangent of the off angle is at most 1×104 per 1 cm2. Accordingly, reverse leakage current can be reduced.

摘要翻译： 碳化硅基板的主表面在与六方晶体的{0001}面的偏离方向上倾斜偏离角度。 主表面具有以下特征：在发射具有比六方晶碳化硅的带隙高的能量的激发光引起的主表面波长超过650nm的光致发光的发光区域中，具有尺寸为 在垂直于关闭方向的方向上最多为15μm，并且在平行于关闭方向的方向上的尺寸不大于将六角形碳化硅中的激发光的穿透长度除以切角的切线所获得的值， 每1 cm2最多1×104。 因此，可以减少反向泄漏电流。

公开(公告)号：US20110278594A1

公开(公告)日：2011-11-17

申请号：US13104247

申请日：2011-05-10

申请人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

发明人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

IPC分类号： H01L29/12 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide.

摘要翻译： 一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热所述坩埚中的所述基底基板而形成与所述SiC基板的主表面接触的碳化硅的基底层，以落入等于或高于构成所述基底基板的碳化硅的升华温度的温度范围内。 坩埚具有内壁，其至少一部分设置有由碳化硅制成的涂层。

公开(公告)号：US20110198027A1

公开(公告)日：2011-08-18

申请号：US13025879

申请日：2011-02-11

申请人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

发明人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

IPC分类号： C09J5/10

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/7602 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized.

摘要翻译： 基底部分和第一和第二碳化硅衬底设置在处理室中，使得第一碳化硅衬底的第一侧面和第二碳化硅衬底的侧表面彼此面对。 处理室具有内表面，其至少一部分被包含Ta原子和C原子的吸收部分覆盖。 为了将第一和第二侧表面彼此连接，处理室中的温度增加到达或超过碳化硅可以升华的温度。 在增加温度的步骤中，吸收部分的至少一部分被碳化。

公开(公告)号：US20130071643A1

公开(公告)日：2013-03-21

申请号：US13605265

申请日：2012-09-06

申请人： Shin HARADA ,  Shinsuke FUJIWARA ,  Taro NISHIGUCHI

发明人： Shin HARADA ,  Shinsuke FUJIWARA ,  Taro NISHIGUCHI

IPC分类号： C30B23/02 ,  C01B31/36

CPC分类号： C30B23/025 ,  C30B23/005 ,  C30B29/36 ,  C30B35/007 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631

摘要： A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm−2, a threading screw dislocation density of not more than 1×104 cm−2, a threading edge dislocation density of not more than 1×104 cm−2, a basal plane dislocation density of not more than 1×104 cm−2, a stacking fault density of not more than 0.1 cm−1, a conductive impurity concentration of not less than 1×1018 cm−2, a residual impurity concentration of not more than 1×1016 cm−2, and a secondary phase inclusion density of not more than 1 cm−3.

摘要翻译： 提供能够稳定地形成优异性能的器件的碳化硅衬底及其制造方法。 碳化硅衬底由碳化硅单晶制成，宽度不小于100mm，微管密度不超过7cm -2，螺纹位错密度不大于1×104cm -2，螺纹刃位错密度不大于1×104cm-2，基面位错密度不大于1×104cm-2，堆垛层错密度不大于0.1cm-1，导电 杂质浓度不小于1×1018cm-2，残留杂质浓度不大于1×1016cm-2，次相包含密度不大于1cm-3。

公开(公告)号：US20120319125A1

公开(公告)日：2012-12-20

申请号：US13494317

申请日：2012-06-12

申请人： Tsutomu HORI ,  Shin HARADA ,  Keiji ISHIBASHI ,  Shinsuke FUJIWARA

发明人： Tsutomu HORI ,  Shin HARADA ,  Keiji ISHIBASHI ,  Shinsuke FUJIWARA

IPC分类号： H01L29/16 ,  H01L21/31

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02667 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/872

摘要： A first single crystal substrate has a first side surface and it is composed of silicon carbide. A second single crystal substrate has a second side surface opposed to the first side surface and it is composed of silicon carbide. A bonding portion connects the first and second side surfaces to each other between the first and second side surfaces. At least a part of the bonding portion is made of particles composed of silicon carbide and having a maximum length not greater than 1 μm.

摘要翻译： 第一单晶基板具有第一侧表面，并且由碳化硅构成。 第二单晶基板具有与第一侧面相对的第二侧面，由碳化硅构成。 接合部分将第一和第二侧表面彼此连接在第一和第二侧表面之间。 结合部的至少一部分由碳化硅构成，最大长度不大于1μm。

公开(公告)号：US20110287603A1

公开(公告)日：2011-11-24

申请号：US13102578

申请日：2011-05-06

申请人： Satomi ITOH ,  Takeyoshi MASUDA ,  Makoto SASAKI ,  Shin HARADA

发明人： Satomi ITOH ,  Takeyoshi MASUDA ,  Makoto SASAKI ,  Shin HARADA

IPC分类号： H01L21/306

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02667 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： First and second supported portions each made of silicon carbide and a supporting portion made of silicon carbide are arranged such that the first and second supported portions and the supporting portion face each other and a gap is provided between the first and second supported portions. By sublimating and recrystallizing silicon carbide of the supporting portion, the supporting portion is connected to each of the first and second single-crystal substrates. On this occasion, a through hole is formed in the supporting portion so as to be connected to the gap. Accordingly, a path is formed which allows a fluid to pass through the gap and the through hole. By closing this path, the fluid can be prevented from being leaked through the silicon carbide substrate.

摘要翻译： 由碳化硅制成的第一和第二支撑部分和由碳化硅制成的支撑部分布置成使得第一和第二支撑部分和支撑部分彼此面对并且在第一和第二支撑部分之间设置有间隙。 通过使支撑部分的碳化硅升华和重结晶，支撑部分连接到第一和第二单晶基板中的每一个。 在这种情况下，在支撑部分上形成一个通孔，以便连接到间隙。 因此，形成允许流体穿过间隙和通孔的路径。 通过关闭该路径，可以防止流体通过碳化硅衬底泄漏。

公开(公告)号：US20110272087A1

公开(公告)日：2011-11-10

申请号：US13100460

申请日：2011-05-04

申请人： Shin HARADA ,  Makoto SASAKI ,  Hiroki INOUE

发明人： Shin HARADA ,  Makoto SASAKI ,  Hiroki INOUE

IPC分类号： B32B37/02 ,  B32B37/10 ,  B32B38/10 ,  B32B37/16 ,  B32B38/00 ,  B32B38/04 ,  B32B37/06 ,  B32B37/14

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/187 ,  H01L29/1608 ,  H01L29/66068 ,  Y10T156/1052 ,  Y10T156/1092

摘要： Upon arranging a base portion and first and second silicon carbide layers such that each of a first backside surface of the first silicon carbide layer and a second backside surface of the second silicon carbide layer faces a first main surface of the base portion, at least one of the first and second silicon carbide layers is partially projected as a projection to outside the first main surface when viewed in a planar view. Each of the first and second backside surfaces and the first main surface are connected to each other by heating. This heating carbonizes at least a part of the projection, thereby forming a carbonized portion. When removing the projection, the carbonized portion is processed. In this way, the planar shape of a silicon carbide substrate can be readily adjusted.

摘要翻译： 在布置基部和第一和第二碳化硅层时，使得第一碳化硅层的第一后侧表面和第二碳化硅层的第二后侧表面中的每一个面向基部的第一主表面，至少一个 当在平面视图中观察时，第一和第二碳化硅层的一部分作为突起部分地投影到第一主表面的外部。 第一和第二背面和第一主表面中的每一个通过加热彼此连接。 该加热使突起的至少一部分碳化，从而形成碳化部。 当移除投影时，碳化部分被处理。 以这种方式，可以容易地调整碳化硅衬底的平面形状。

公开(公告)号：US20130061801A1

公开(公告)日：2013-03-14

申请号：US13566070

申请日：2012-08-03

申请人： Shinsuke FUJIWARA ,  Shin HARADA ,  Taro NISHIGUCHI ,  Hiroki INOUE ,  Naoki OOI

发明人： Shinsuke FUJIWARA ,  Shin HARADA ,  Taro NISHIGUCHI ,  Hiroki INOUE ,  Naoki OOI

IPC分类号： C30B23/02

CPC分类号： C30B23/002 ,  C30B29/36

摘要： Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate.

摘要翻译： 提供一种制造碳化硅晶体的方法，包括以下步骤：将种子基底和用于碳化硅晶体的源材料放置在生长容器内; 并且通过升华法在种子基底的表面上生长直径大于4英寸的碳化硅晶体，在生长步骤中，生长容器内的压力以预定的压力以预定的变化率变化 。

公开(公告)号：US20120199848A1

公开(公告)日：2012-08-09

申请号：US13366694

申请日：2012-02-06

申请人： Satomi ITO ,  Shin HARADA ,  Jun GENBA ,  Kazuhiro FUJIKAWA

发明人： Satomi ITO ,  Shin HARADA ,  Jun GENBA ,  Kazuhiro FUJIKAWA

IPC分类号： H01L29/16 ,  H01L21/20

CPC分类号： H01L29/36 ,  H01L21/02447 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/808

摘要： A buffer layer is provided on a substrate, is made of silicon carbide containing an impurity, and has a thickness larger than 1 μm and smaller than 7 μm. A drift layer is provided on the buffer layer and is made of silicon carbide having an impurity concentration smaller than that of the buffer layer. In this way, there can be provided a silicon carbide semiconductor device having the drift layer having a desired impurity concentration and a high crystallinity.

摘要翻译： 缓冲层设置在基板上，由含有杂质的碳化硅构成，其厚度大于1μm且小于7μm。 漂移层设置在缓冲层上，由具有比缓冲层的杂质浓度小的杂质浓度的碳化硅制成。 以这种方式，可以提供具有所需杂质浓度和高结晶度的漂移层的碳化硅半导体器件。