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    Mechanism to prevent actuation charging in microelectromechanical actuators
    2.
    发明申请
    Mechanism to prevent actuation charging in microelectromechanical actuators 有权
    防止微机电致动器致动充电的机构

    公开(公告)号：US20060065942A1

    公开(公告)日：2006-03-30

    申请号：US10955153

    申请日：2004-09-30

    申请人： Tsung-Kuan Chou ,  Quan Tran

    发明人： Tsung-Kuan Chou ,  Quan Tran

    IPC分类号： H01L29/84

    CPC分类号： H01H59/0009 ,  H01H2059/0018

    摘要： According to one embodiment a microelectromechanical (MEMS) switch is disclosed. The MEMS switch includes a top movable electrode, and an actutaion electrode with an undoped polysilicon stopper region to contact the top movable electrode when an actuation current is applied. The undoped polysilicon stopper region prevents actuation charging that accumulates over time in a unipolar actuation condition.

    摘要翻译： 根据一个实施例，公开了一种微机电（MEMS）开关。 MEMS开关包括顶部可动电极和具有未掺杂多晶硅停留区域的活性电极，以在施加致动电流时接触顶部可动电极。 未掺杂的多晶硅停止区域防止在单极致动条件下随时间累积的致动充电。

    Ultra-low voltage capable zipper switch
    3.
    发明申请
    Ultra-low voltage capable zipper switch 失效
    超低电压拉链开关

    公开(公告)号：US20060290443A1

    公开(公告)日：2006-12-28

    申请号：US11165795

    申请日：2005-06-23

    申请人： Tsung-Kuan Chou ,  Hanan Bar ,  Quan Tran ,  Joseph Melki ,  John Heck ,  Qing Ma

    发明人： Tsung-Kuan Chou ,  Hanan Bar ,  Quan Tran ,  Joseph Melki ,  John Heck ,  Qing Ma

    IPC分类号： H01P1/10

    CPC分类号： H01H59/0009 ,  B81B3/0013 ,  B81B2201/014 ,  H01H2059/0063 ,  H01H2059/0072

    摘要： An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.

    摘要翻译： 机电开关包括致动电极，锚，悬臂电极，触点和信号线。 致动电极和锚固件安装到基板上。 悬臂电极由致动电极上方的锚固件支撑。 触点安装到悬臂电极。 当在致动电极和悬臂电极之间施加致动电压时，信号线被定位成与触点形成闭合电路，导致悬臂电极以拉链的方式朝着致动电极弯曲，从悬臂的远端开始 电极。

    FBAR device frequency stabilized against temperature drift
    5.
    发明申请
    FBAR device frequency stabilized against temperature drift 审中-公开
    FBAR器件频率稳定，防止温度漂移

    公开(公告)号：US20060001329A1

    公开(公告)日：2006-01-05

    申请号：US10882510

    申请日：2004-06-30

    申请人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    发明人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    IPC分类号： H01L41/08

    CPC分类号： H03H9/02102 ,  H03H2009/02196

    摘要： A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括夹在顶部电极和底部电极之间的压电薄膜。 提供温度传感器以感测温度以确定FBAR的温度感应频率漂移。 可操作地连接到温度传感器的电压控制器向FBAR提供直流（DC）偏置电压以引起相反的电压感应频率漂移以补偿温度引起的频率漂移。

    Through-wafer vias and surface metallization for coupling thereto
    7.
    发明授权
    Through-wafer vias and surface metallization for coupling thereto 有权
    通孔和用于耦合的表面金属化

    公开(公告)号：US07510907B2

    公开(公告)日：2009-03-31

    申请号：US11165465

    申请日：2005-06-22

    申请人： John Heck ,  Qing Ma ,  Quan Tran ,  Tsung-Kuan Allen Chou ,  Semeon Altshuler ,  Boaz Weinfeld

    发明人： John Heck ,  Qing Ma ,  Quan Tran ,  Tsung-Kuan Allen Chou ,  Semeon Altshuler ,  Boaz Weinfeld

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

    摘要翻译： 一种制造通晶片通孔的装置和方法。 第一掩模形成在第一半导体管芯的第一侧上以限定第一通孔区域。 通过第一通孔区域中的第一半导体管芯蚀刻深的凹部，并且在包括深凹部的第一侧上形成覆盖金属层。 将橡皮布金属层从第一半导体管芯的第一侧的外表面移除，同时将橡皮布金属层的一部分保持在深凹部内。

    Semiconductor device having a low-K dielectric layer
    8.
    发明授权
    Semiconductor device having a low-K dielectric layer 有权
    具有低K电介质层的半导体器件

    公开(公告)号：US06914335B2

    公开(公告)日：2005-07-05

    申请号：US10038343

    申请日：2002-01-02

    申请人： Ebrahim Andideh ,  Qing Ma ,  Quan Tran ,  Steve Towle

    发明人： Ebrahim Andideh ,  Qing Ma ,  Quan Tran ,  Steve Towle

    IPC分类号： H01L21/768 ,  H01L29/40

    CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

    摘要翻译： 描述了改进的半导体器件。 该半导体器件包括形成在衬底上的具有低k介电常数的第一绝缘层，该第一绝缘层优选包含掺碳氧化物。 该器件还包括形成在第一层上的具有相对高的介电常数和优异的机械强度的第二层。 第二层优选在压应力下。 可以在第二层上形成第三层，其具有相对低的介电常数和相对较差的机械强度，并且可以在第三层上形成第四层，第三层具有相对高的介电常数和优异的机械强度。