公开(公告)号：US20230238445A1

公开(公告)日：2023-07-27

申请号：US17676216

申请日：2022-02-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Chun-Chieh Chiu ,  Chun-Ling Lin ,  Shu Min Huang ,  Hsin-Fu Huang

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  H01L21/768 ,  H01L21/324

CPC classification number: H01L29/66431 ,  H01L29/2003 ,  H01L29/7786 ,  H01L21/76841 ,  H01L21/3245

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.

公开(公告)号：US20200168450A1

公开(公告)日：2020-05-28

申请号：US16203212

申请日：2018-11-28

Applicant: United Microelectronics Corp.

Inventor： Ko-Wei Lin ,  Kuan-Hsiang Chen ,  Hsin-Fu Huang ,  Chun-Ling Lin ,  Sheng-Yi Su ,  Pei-Hsun Kao

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768

Abstract: A method for fabricating interconnect of semiconductor device. The method includes providing a base substrate, having an inter-layer dielectric layer on top. A copper interconnect structure is formed in the inter-layer dielectric layer. A pre-sputter clean process is performed with hydrogen radicals on the copper interconnect structure. A degas process is sequentially performed on the copper interconnect structure. A cobalt cap layer is formed on the copper interconnect structure.

公开(公告)号：US20180138263A1

公开(公告)日：2018-05-17

申请号：US15350453

申请日：2016-11-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Yen-Chen Chen ,  Chin-Fu Lin ,  Chun-Yuan Wu ,  Chun-Ling Lin

IPC: H01L49/02

CPC classification number: H01L28/75

Abstract: A semiconductor structure includes a capacitor. The capacitor includes a bottom electrode, a first high-k dielectric layer, a second high-k dielectric layer and a top electrode. The bottom electrode includes a first layer and a second layer disposed on the first layer. The bottom electrode is formed of TiN. The first layer has a crystallization structure. The second layer has an amorphous structure. The first high-k dielectric layer is disposed on the bottom electrode. The first high-k dielectric layer is formed of TiO2. The second high-k dielectric layer is disposed on the first high-k dielectric layer. The second high-k dielectric layer is formed of a material different from TiO2. The top electrode is disposed on the second high-k dielectric layer.

公开(公告)号：US20250159916A1

公开(公告)日：2025-05-15

申请号：US19019409

申请日：2025-01-13

Applicant: UNITED MICROELECTRONICS CORP,

Inventor： Ko-Wei Lin ,  Chun-Chieh Chiu ,  Chun-Ling Lin ,  Shu Min Huang ,  Hsin-Fu Huang

IPC: H10D30/01 ,  H01L21/324 ,  H01L21/768 ,  H10D30/47 ,  H10D62/85

Abstract: A high electron mobility transistor includes a channel layer disposed on a substrate, a barrier layer disposed on the channel layer, a gate structure disposed on the barrier layer, a source contact structure and a drain contact structure disposed on the barrier layer at two sides of the gate structure, and extending through the barrier layer to directly contact the channel layer, and a gate contact structure disposed on the gate structure. The source contact structure, the drain contact structure, and the gate contact structure respectively include a liner and a metal layer directly disposed on the liner. The metal layer comprises a metal material doped with a first additive, and a weight percentage of the first additive in the metal layer is between 0% and 2%.

公开(公告)号：US20190067184A1

公开(公告)日：2019-02-28

申请号：US16170059

申请日：2018-10-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Hung-Miao Lin ,  Chun-Ling Lin ,  Ying-Lien Chen ,  Huei-Ru Tsai ,  Sheng-Yi Su

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L23/528 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

公开(公告)号：US10079177B1

公开(公告)日：2018-09-18

申请号：US15694354

申请日：2017-09-01

Applicant: United Microelectronics Corp.

Inventor： Ko-Wei Lin ,  Ying-Lien Chen ,  Chun-Ling Lin ,  Huei-Ru Tsai ,  Hung-Miao Lin ,  Sheng-Yi Su ,  Tzu-Hao Liu

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/288

CPC classification number: H01L21/76873 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76862 ,  H01L23/53238

Abstract: A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with H2 gas at a first pressure. The cobalt layer is treated with a H2 plasma at a second pressure. The second pressure is lower than the first pressure.

公开(公告)号：US20180261537A1

公开(公告)日：2018-09-13

申请号：US15466847

申请日：2017-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Hung-Miao Lin ,  Chun-Ling Lin ,  Ying-Lien Chen ,  Huei-Ru Tsai ,  Sheng-Yi Su

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/28556 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

公开(公告)号：US20220320420A1

公开(公告)日：2022-10-06

申请号：US17844741

申请日：2022-06-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuo-Chih Lai ,  Yi-Syun Chou ,  Ko-Wei Lin ,  Pei-Hsun Kao ,  Wei Chen ,  Chia-Fu Cheng ,  Chun-Yao Yang ,  Chia-Chang Hsu

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.

公开(公告)号：US10153231B2

公开(公告)日：2018-12-11

申请号：US15466847

申请日：2017-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Hung-Miao Lin ,  Chun-Ling Lin ,  Ying-Lien Chen ,  Huei-Ru Tsai ,  Sheng-Yi Su

IPC: H01L23/528 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

公开(公告)号：US12237395B2

公开(公告)日：2025-02-25

申请号：US17676216

申请日：2022-02-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ko-Wei Lin ,  Chun-Chieh Chiu ,  Chun-Ling Lin ,  Shu Min Huang ,  Hsin-Fu Huang

IPC: H01L29/66 ,  H01L21/324 ,  H01L21/768 ,  H01L29/20 ,  H01L29/778

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.