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    Increased dynamic range sensor
    2.
    发明授权
    Increased dynamic range sensor 有权
    增加动态范围传感器

    公开(公告)号：US09588134B2

    公开(公告)日：2017-03-07

    申请号：US13468203

    申请日：2012-05-10

    申请人： Udo Ausserlechner ,  Mario Motz

    发明人： Udo Ausserlechner ,  Mario Motz

    IPC分类号： G01P3/487 ,  G01D21/02 ,  G01R33/07 ,  G01R33/09 ,  G01D1/14

    CPC分类号： G01P3/487 ,  G01D1/14 ,  G01D21/02 ,  G01R33/07 ,  G01R33/09

    摘要： Some aspects of the present disclosure provide for a sensor system having a large range between minimum and maximum allowed input quantities. In some embodiments, the sensor system has a nonlinear sensor and a linear sensor. The nonlinear sensor is generates a first nonlinear signal corresponding to a detected physical input quantity. The linear sensor generates a second linear signal corresponding to the detected physical input quantity. A signal processor receives the first nonlinear signal and the second linear signal and generates a composite output signal that corresponds to the detected physical input quantity. The composite output signal is a combination of the first nonlinear signal and the second linear signal that provides for a signal having a high sensitivity to small physical input quantities while avoiding saturation at large physical input quantities.

    摘要翻译： 本公开的一些方面提供了在最小和最大允许输入量之间具有大范围的传感器系统。 在一些实施例中，传感器系统具有非线性传感器和线性传感器。 非线性传感器产生对应于检测到的物理输入量的第一非线性信号。 线性传感器产生对应于检测到的物理输入量的第二线性信号。 信号处理器接收第一非线性信号和第二线性信号，并产生对应于检测到的物理输入量的复合输出信号。 复合输出信号是第一非线性信号和第二线性信号的组合，其提供具有对小物理输入量的高灵敏度的信号，同时避免在大的物理输入量处的饱和。

    Current sensors
    3.
    发明授权
    Current sensors 有权
    电流传感器

    公开(公告)号：US09389247B2

    公开(公告)日：2016-07-12

    申请号：US13289228

    申请日：2011-11-04

    申请人： Udo Ausserlechner

    发明人： Udo Ausserlechner

    IPC分类号： G01R33/02 ,  G01R15/20

    CPC分类号： G01R15/202 ,  G01R15/207 ,  G01R33/072

    摘要： Embodiments relate to magnetic field current sensors having sensor elements for sensing at least two magnetic field components, for example Bx and By. The current in a conductor is estimated by Bx and Bx/By, wherein Bx is the primary measurement and Bx/By is a corrective term used to account for position tolerances between the sensor and the conductor. In other embodiments, the corrective term can be dBx/By, where dBx is a difference in between components sensed at different sensor elements. The particular field components can vary in embodiments; for example, the current can be estimated by By and By/Bx, or dBy/Bx or some other arrangement.

    摘要翻译： 实施例涉及具有用于感测至少两个磁场分量的传感器元件的磁场电流传感器，例如Bx和By。 导体中的电流由Bx和Bx / By估计，其中Bx是主要测量，Bx / By是用于考虑传感器和导体之间的位置公差的校正项。 在其他实施例中，校正项可以是dBx / By，其中dBx是在不同传感器元件处感测到的分量之间的差异。 特定现场组件可以在实施例中变化; 例如，可以通过By和By / Bx或dBy / Bx或某些其他布置来估计电流。

    Electronic device with ring-connected hall effect regions
    4.
    发明授权
    Electronic device with ring-connected hall effect regions 有权
    具有环形霍尔效应区域的电子装置

    公开(公告)号：US09007060B2

    公开(公告)日：2015-04-14

    申请号：US13187935

    申请日：2011-07-21

    申请人： Udo Ausserlechner

    发明人： Udo Ausserlechner

    IPC分类号： G01R33/07 ,  G01L1/12

    CPC分类号： H01L43/065 ,  G01D5/145 ,  G01L1/12 ,  G01R33/07 ,  G01R33/072 ,  H01L43/04

    摘要： An electronic device includes a number of n Hall effect regions with n>1, wherein the n Hall effect regions are isolated from each other. The electronic device also includes at least eight contacts in or on surfaces of the n Hall effect regions, wherein the contacts include: a first and a second contact of each Hall effect region. A first contact of the (k+1)-th Hall effect region is connected to the second contact of the k-th Hall effect region for k=1 to n−1, and the first contact of the first Hall effect region is connected to the second contact of the n-th Hall effect region. The at least eight contacts include at least two supply contacts and at least two sense contacts. Each Hall effect region includes at most one of the at least two supply contacts and at most one of the at least two sense contacts.

    摘要翻译： 一种电子设备包括n个n个大厅效应区域，其中n个霍尔效应区域彼此隔离。 电子设备还包括在n个霍尔效应区域中或表面上的至少八个触点，其中触点包括：每个霍尔效应区域的第一和第二触点。 第（k + 1）霍尔效应区域的第一接触连接到k = 1到n-1的第k个霍尔效应区域的第二接点，并且第一霍尔效应区域的第一接触被连接 到第n个霍尔效应区域的第二个接触。 至少八个触点包括至少两个电源触点和至少两个感测触点。 每个霍尔效应区域包括至少两个电源触点中的至少一个和至少两个感测触点中的至少一个。

    Vertical hall sensor with series-connected hall effect regions
    5.
    发明授权
    Vertical hall sensor with series-connected hall effect regions 有权
    垂直霍尔传感器与串联霍尔效应区域

    公开(公告)号：US08981504B2

    公开(公告)日：2015-03-17

    申请号：US13530235

    申请日：2012-06-22

    申请人： Mario Motz ,  Udo Ausserlechner

    发明人： Mario Motz ,  Udo Ausserlechner

    IPC分类号： H01L29/82 ,  G01R33/06 ,  G01R33/07 ,  H01L27/22 ,  H01L43/06

    CPC分类号： G01R33/077 ,  G01R33/066 ,  G01R33/07 ,  H01L27/22 ,  H01L43/065

    摘要： A vertical Hall sensor includes first and second vertical Hall effect regions in a semiconductor substrate, with first and second pluralities of contacts arranged at one side of the first or second vertical Hall effect regions, respectively. The second vertical Hall effect region is connected in series with the first vertical Hall effect region regarding a power supply. The vertical Hall sensor further includes first and second layers adjacent to the first and second vertical Hall effect regions at a side other than a side of the first or second pluralities of contacts. The first and second layers have different doping properties than the first and second vertical Hall effect regions and insulate the first and second vertical Hall effect regions from a bulk of the semiconductor substrate by at least one reverse-biased p-n junction per vertical Hall effect region during an operation of the vertical Hall sensor.

    摘要翻译： 垂直霍尔传感器包括半导体衬底中的第一和第二垂直霍尔效应区域，第一和第二多个触点分别布置在第一或第二垂直霍尔效应区域的一侧。 第二垂直霍尔效应区域与关于电源的第一垂直霍尔效应区域串联连接。 垂直霍尔传感器还包括在除了第一或第二多个触点的一侧以外的一侧与第一和第二垂直霍尔效应区域相邻的第一和第二层。 第一和第二层具有与第一和第二垂直霍尔效应区域不同的掺杂特性，并且使绝缘半导体衬底的第一和第二垂直霍尔效应区域与每个垂直霍尔效应区域至少一个反向偏置pn结隔离 垂直霍尔传感器的操作。

    Double die sensor
    7.
    发明授权
    Double die sensor 有权
    双模传感器

    公开(公告)号：US08915153B2

    公开(公告)日：2014-12-23

    申请号：US13421191

    申请日：2012-03-15

    申请人： Udo Ausserlechner

    发明人： Udo Ausserlechner

    IPC分类号： G01L1/00

    CPC分类号： G01D3/0365 ,  G01R33/0041 ,  G01R33/07 ,  H01L29/82

    摘要： One embodiment of the present invention relates to a device, such as a sensor device. The device includes a sensor die and a circuit die. The sensor die includes a sensor and a feedback component. The circuit die includes circuitry. The circuit die is varied from the sensor die, such as comprising a varied substrate material. The circuitry is coupled to the sensor and the feedback component. The circuitry and the feedback component can communicate correlation information.

    摘要翻译： 本发明的一个实施例涉及一种诸如传感器装置的装置。 该装置包括传感器管芯和电路管芯。 传感器芯片包括传感器和反馈部件。 电路管芯包括电路。 电路管芯从传感器管芯变化，例如包括不同的衬底材料。 电路耦合到传感器和反馈部件。 电路和反馈组件可以传达相关信息。

    Magnetic-field sensor including a plurality of magnetoresistive sensor elements and method of calibrating a magnetic-field sensor
    9.
    发明授权
    Magnetic-field sensor including a plurality of magnetoresistive sensor elements and method of calibrating a magnetic-field sensor 有权
    包括多个磁阻传感器元件的磁场传感器和校准磁场传感器的方法

    公开(公告)号：US08766623B2

    公开(公告)日：2014-07-01

    申请号：US13086117

    申请日：2011-04-13

    申请人： Udo Ausserlechner ,  Dirk Hammerschmidt

    发明人： Udo Ausserlechner ,  Dirk Hammerschmidt

    IPC分类号： G01R35/00 ,  G01B7/30 ,  G01R33/02 ,  G01D18/00 ,  G01D5/14 ,  G01R33/09 ,  G01R33/00

    CPC分类号： G01D18/008 ,  G01D5/145 ,  G01P3/487 ,  G01P21/02 ,  G01R33/0035 ,  G01R33/09 ,  G01R33/095

    摘要： A magnetic-field sensor and a method of calibrating a magnetic-field sensor are disclosed. In one embodiment the method includes supplying the measurement arrangements with an excitation signal to generate a tappable measuring signal at each measurement tap of the measurement arrangements, detecting the measuring signals, evaluating the detected measuring signals by comparing the detected measuring signals with a comparison value, determining the measurement arrangement with a smallest difference, in terms of magnitude, between the detected measuring signals and the comparison value, and choosing the measurement arrangement with the smallest difference for a measurement operation of the magnetic-field sensor. The magnetic-field sensor includes a plurality of magnetoresistive sensor elements connected to form measurement arrangements each measurement arrangement including a measurement tap, wherein the magnetoresistive sensor elements are laterally distributed on a chip of the magnetic field sensor.

    摘要翻译： 公开了磁场传感器和校准磁场传感器的方法。 在一个实施例中，该方法包括向测量装置提供激励信号以在测量装置的每个测量抽头处产生可触发测量信号，检测测量信号，通过将检测到的测量信号与比较值进行比较来评估检测到的测量信号， 以检测到的测量信号与比较值之间的最小差值来确定测量装置，并且对于磁场传感器的测量操作选择具有最小差异的测量装置。 磁场传感器包括多个磁阻传感器元件，其连接成形成测量装置，每个测量装置包括测量分接头，其中磁阻传感器元件横向分布在磁场传感器的芯片上。

    Vertical hall sensor circuit comprising stress compensation circuit
    10.
    发明授权
    Vertical hall sensor circuit comprising stress compensation circuit 有权
    垂直霍尔传感器电路包括应力补偿电路

    公开(公告)号：US08723515B2

    公开(公告)日：2014-05-13

    申请号：US13541863

    申请日：2012-07-05

    申请人： Mario Motz ,  Udo Ausserlechner

    发明人： Mario Motz ,  Udo Ausserlechner

    IPC分类号： G01R33/06

    CPC分类号： G01R33/0029 ,  G01R33/0082 ,  G01R33/072 ,  G01R33/077 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A vertical Hall sensor circuit includes an arrangement comprising a vertical Hall effect region of a first doping type, formed within a semiconductor substrate and having a stress dependency with respect to a Hall effect-related electrical characteristic. The vertical Hall sensor circuit further includes a stress compensation circuit which comprises at least one of a lateral resistor arrangement and a vertical resistor arrangement for generating a stress-dependent lateral resistor arrangement signal based on a reference signal provided to the stress compensation circuit, and for generating a stress-dependent vertical resistor arrangement signal based on the reference signal, respectively. The vertical Hall sensor circuit further includes a first circuit for providing a first signal to the arrangement based on at least one of the stress-dependent lateral resistor arrangement signal and the stress-dependent vertical resistor arrangement signal.

    摘要翻译： 垂直霍尔传感器电路包括包括形成在半导体衬底内并具有与霍尔效应相关的电特性的应力依赖性的第一掺杂类型的垂直霍尔效应区域的布置。 垂直霍尔传感器电路还包括应力补偿电路，其包括横向电阻器布置和垂直电阻器布置中的至少一个，用于基于提供给应力补偿电路的参考信号产生应力依赖的横向电阻器布置信号，并且 分别基于参考信号产生应力依赖垂直电阻器布置信号。 垂直霍尔传感器电路还包括第一电路，用于基于应力依赖性横向电阻器布置信号和应力依赖垂直电阻器布置信号中的至少一个向布置提供第一信号。