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公开(公告)号：US20050074979A1
公开(公告)日：2005-04-07
申请号：US10678758
申请日：2003-10-02
申请人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
发明人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
IPC分类号： H01L21/02 , H01L21/311 , H01L21/8246 , H01L27/115 , H01L21/302 , H01L21/461
CPC分类号： H01L27/11502 , H01L21/31122 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the Al2O3 layer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.
摘要翻译： 具有垂直结构的铁电体通过在绝缘体上沉积铁电层的工艺形成。 在第一蚀刻阶段中，铁电材料被蚀刻以在其中形成开口，从而使绝缘层基本上完好无损。 然后，将导电层沉积到形成在铁电层中的开口中，在开口的侧面形成电极。 进行进一步蚀刻以在Al 2 O 3层中形成间隙，用于连接到其下方的导电元件。 因此，在进行第二蚀刻步骤的时候， 已经有电极覆盖在铁电材料的两侧，其间没有绝缘栅栏。
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公开(公告)号：US07316980B2
公开(公告)日：2008-01-08
申请号：US10678758
申请日：2003-10-02
申请人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
发明人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
IPC分类号： H01L21/302
CPC分类号： H01L27/11502 , H01L21/31122 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the Al2O3 layer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.
摘要翻译： 具有垂直结构的铁电体通过在绝缘体上沉积铁电体层的工艺形成。 在第一蚀刻阶段中，铁电材料被蚀刻以在其中形成开口，从而使绝缘层基本上完好无损。 然后，将导电层沉积到形成在铁电层中的开口中，在开口的侧面形成电极。 执行进一步蚀刻以在Al 2 O 3层中形成间隙，以便连接到其下方的导电元件。 因此，在进行第二蚀刻步骤的时候， 已经有电极覆盖在铁电材料的两侧，其间没有绝缘栅栏。
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公开(公告)号：US20050084984A1
公开(公告)日：2005-04-21
申请号：US10678952
申请日：2003-10-02
申请人： Haoren Zhuang , Rainer Bruchhaus , Ulrich Egger , Jenny Lian , Nicolas Nagel
发明人： Haoren Zhuang , Rainer Bruchhaus , Ulrich Egger , Jenny Lian , Nicolas Nagel
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A vertical capacitor of an FeRAM device is formed by depositing conductive material and etching it to form electrodes, which are located over openings in an insulating layer so that they are electrically connected to lower levels of the structure. A layer of ferroelectric material is formed on the sides of the electrodes, and etched to a desired, uniform thickness. Conductive material is deposited over the ferroelectric material to form a uniform surface onto which another insulating layer can be deposited. Since this process does not include etching of an insulating layer at a time between the formation of the electrodes and the deposition of the ferroelectric material, no fences of insulating material are formed between them. The geometry can be accurately controlled, to give uniform electric fields and reliable operating parameters.
摘要翻译： FeRAM器件的垂直电容器通过沉积导电材料并进行蚀刻而形成，以形成位于绝缘层中的开口上方的电极，使得它们电连接到结构的较低层。 在电极的侧面形成铁电材料层，并且蚀刻到期望的均匀厚度。 导电材料沉积在铁电材料上以形成可沉积另一绝缘层的均匀表面。 由于该方法不包括在形成电极之间的时间刻蚀绝缘层和铁电体的沉积，所以在它们之间不形成绝缘材料栅栏。 几何形状可以精确控制，给出均匀的电场和可靠的工作参数。
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公开(公告)号：US06867053B2
公开(公告)日：2005-03-15
申请号：US10629326
申请日：2003-07-28
申请人： Ulrich Egger , Haoren Zhuang , Rainer Bruchhaus
发明人： Ulrich Egger , Haoren Zhuang , Rainer Bruchhaus
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/00 , H01L21/8234
CPC分类号： H01L28/55 , H01L21/31122 , H01L21/31144 , H01L21/32136 , H01L21/32139 , H01L28/65
摘要： A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top electrode and a bottom electrode. The top electrode is patterned according to the pattern of the hardmask by etching at a first temperature. The top electrode serves as the noble metal hardmask and the ferroelectric layer is patterned according to the pattern of the top electrode at a second temperature lower than the first temperature, resulting in the top electrode having sidewalls beveled relative to a top surface of the top electrode etching. The bottom electrode is etched at a third temperature to form the capacitor.
摘要翻译： 使用贵金属硬掩模制造铁电电容器。 硬掩模沉积在电容器堆叠的顶部电极上，该电容器堆叠包括夹在顶部电极和底部电极之间的铁电层。 根据硬掩模的图案，通过在第一温度下蚀刻来对顶部电极进行图案化。 顶部电极用作贵金属硬掩模，并且铁电层根据顶部电极的图案在低于第一温度的第二温度下被图案化，导致顶部电极具有相对于顶部电极的顶表面倾斜的侧壁 蚀刻。 在第三温度下蚀刻底部电极以形成电容器。
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公开(公告)号：US07098142B2
公开(公告)日：2006-08-29
申请号：US10377083
申请日：2003-02-26
申请人： Ulrich Egger , Haoren Zhuang , Rainer Bruchhaus
发明人： Ulrich Egger , Haoren Zhuang , Rainer Bruchhaus
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , H01L21/31122 , H01L21/32136 , H01L28/55 , H01L28/60
摘要： A method of etching a ferroelectric device 100 having a ferroelectric layer 112 between a top and a bottom electrode 114, 108 is disclosed herein. Hardmasks 116, 118 are deposited on the top electrode 114, two or more hardmasks being spaced apart by narrow first regions 115 and spaced apart from other hardmasks by wider second regions 117. The top electrode 114 and ferroelectric layer 112 are then etched to pattern the top electrode 114 thus forming capacitors 102, 104, and the bottom electrode 108 is etched by a process in which the second regions are etched more slowly than the second regions. Those capacitors having a first region between them have a common bottom electrode 108, but in the second regions the bottom electrode is severed. To pattern the bottom electrode 108, a fluorine-based chemistry followed thereafter by a CO-based chemistry are used in a two step etching process.
摘要翻译： 本文公开了一种在顶部和底部电极114,108之间蚀刻具有铁电层112的铁电体元件100的方法。 硬掩模116,118沉积在顶部电极114上，两个或更多个硬掩模被狭窄的第一区域115隔开，并且由较宽的第二区域117与其它硬掩模隔开。 然后蚀刻顶部电极114和铁电层112以对顶部电极114进行图案，从而形成电容器102,104，并且通过其中第二区域被蚀刻得比第二区域更慢的工艺来蚀刻底部电极108。 那些在它们之间具有第一区域的电容器具有共同的底部电极108，但是在第二区域中，底部电极被切断。 为了对底部电极108进行图案化，其后采用基于CO的化学物质的氟基化学物质用于两步蚀刻工艺。
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公开(公告)号：US20050023582A1
公开(公告)日：2005-02-03
申请号：US10629326
申请日：2003-07-28
申请人： Ulrich Egger , Haoren Zhuang , Rainer Bruchhaus
发明人： Ulrich Egger , Haoren Zhuang , Rainer Bruchhaus
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L29/76
CPC分类号： H01L28/55 , H01L21/31122 , H01L21/31144 , H01L21/32136 , H01L21/32139 , H01L28/65
摘要： A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top electrode and a bottom electrode. The top electrode is patterned according to the pattern of the hardmask by etching at a first temperature. The top electrode serves as the noble metal hardmask and the ferroelectric layer is patterned according to the pattern of the top electrode at a second temperature lower than the first temperature, resulting in the top electrode having sidewalls beveled relative to a top surface of the top electrode etching. The bottom electrode is etched at a third temperature to form the capacitor.
摘要翻译： 使用贵金属硬掩模制造铁电电容器。 硬掩模沉积在电容器堆叠的顶部电极上，该电容器堆叠包括夹在顶部电极和底部电极之间的铁电层。 根据硬掩模的图案，通过在第一温度下蚀刻来对顶部电极进行图案化。 顶部电极用作贵金属硬掩模，并且铁电层根据顶部电极的图案在低于第一温度的第二温度下被图案化，导致顶部电极具有相对于顶部电极的顶表面倾斜的侧壁 蚀刻。 在第三温度下蚀刻底部电极以形成电容器。
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公开(公告)号：US07041551B2
公开(公告)日：2006-05-09
申请号：US10677099
申请日：2003-09-30
申请人： Haoren Zhuang , Nicolas Nagel , Jenny Lian , Rainer Bruchhaus
发明人： Haoren Zhuang , Nicolas Nagel , Jenny Lian , Rainer Bruchhaus
IPC分类号： H01L21/8242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/92
摘要： A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.
摘要翻译： 用于形成电容器器件的器件和方法包括形成衬底，在衬底上形成第一层间电介质层，并通过衬底形成两个或更多个接触插塞。 在第一层间电介质层上形成导电层，通过蚀刻导电层，在交替的接触插塞上形成电极。 然后用铁电层涂覆蚀刻的电极。 从分离接触塞的表面蚀刻铁电层，并且通过用导电材料填充交替的接触插塞上的电极之间的空间来产生附加电极，以建立插塞和电极之间的电接触。
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公开(公告)号：US20050067644A1
公开(公告)日：2005-03-31
申请号：US10677099
申请日：2003-09-30
申请人： Haoren Zhuang , Nicolas Nagel , Jenny Lian , Rainer Bruchhaus
发明人： Haoren Zhuang , Nicolas Nagel , Jenny Lian , Rainer Bruchhaus
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/92
摘要： A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.
摘要翻译： 用于形成电容器器件的器件和方法包括形成衬底，在衬底上形成第一层间电介质层，并通过衬底形成两个或更多个接触插塞。 在第一层间电介质层上形成导电层，通过蚀刻导电层，在交替的接触插塞上形成电极。 然后用铁电层涂覆蚀刻的电极。 从分离接触塞的表面蚀刻铁电层，并且通过用导电材料填充交替的接触插塞上的电极之间的空间来产生附加电极，以建立插塞和电极之间的电接触。
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公开(公告)号：US06746877B1
公开(公告)日：2004-06-08
申请号：US10338798
申请日：2003-01-07
申请人： Karl Hornik , Ulrich Egger , Rainer Bruchhaus
发明人： Karl Hornik , Ulrich Egger , Rainer Bruchhaus
IPC分类号： H01L2100
CPC分类号： H01L28/55 , H01L21/32134 , H01L28/60 , H01L28/88
摘要： A ferroelectric capacitor encapsulation method for preventing hydrogen damage to electrodes and ferroelectric material of the capacitor. In general terms, the method for encapsulating a capacitor includes etching a bottom electrode of a capacitor to expose an underlying wafer surface. An undercut is etched between the capacitor and the wafer surface. The undercut is refilled with a barrier layer to reduce the diffusion of hydrogen from the surface of the wafer into the capacitor.
摘要翻译： 一种用于防止对电容器的电极和铁电体材料的氢损伤的铁电电容器封装方法。 一般来说，封装电容器的方法包括蚀刻电容器的底部电极以暴露下面的晶片表面。 在电容器和晶片表面之间蚀刻底切。 底切被重新填充阻挡层以减少氢从晶片表面扩散到电容器中。
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公开(公告)号：US20090190388A1
公开(公告)日：2009-07-30
申请号：US12019364
申请日：2008-01-24
CPC分类号： H01L27/101 , H01L27/2436 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/1683
摘要： A method of fabricating a resistive storage device is provided. The method generally comprises providing an electrode structure stack comprising a first electrode and an electrode structure mask arranged at the first electrode, forming a support structure at least partly at the electrode structure mask, removing the electrode structure mask to leave a storage region window in the support structure, and forming a resistive storage region in the storage region window at the first electrode.
摘要翻译： 提供一种制造电阻存储装置的方法。 该方法通常包括提供包括布置在第一电极处的第一电极和电极结构掩模的电极结构堆叠，至少部分地形成在电极结构掩模处的支撑结构，去除电极结构掩模以将存储区窗口留在 并且在第一电极的存储区窗口中形成电阻存储区。
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